К. С. Журавлев

2.6k total citations
295 papers, 2.0k citations indexed

About

К. С. Журавлев is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, К. С. Журавлев has authored 295 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 174 papers in Electrical and Electronic Engineering, 155 papers in Atomic and Molecular Physics, and Optics and 130 papers in Materials Chemistry. Recurrent topics in К. С. Журавлев's work include Semiconductor Quantum Structures and Devices (130 papers), GaN-based semiconductor devices and materials (122 papers) and Semiconductor materials and devices (69 papers). К. С. Журавлев is often cited by papers focused on Semiconductor Quantum Structures and Devices (130 papers), GaN-based semiconductor devices and materials (122 papers) and Semiconductor materials and devices (69 papers). К. С. Журавлев collaborates with scholars based in Russia, Germany and Poland. К. С. Журавлев's co-authors include Т. В. Малин, V. G. Mansurov, Т. С. Шамирзаев, A. I. Toropov, A. V. Nenashev, А. К. Гутаковский, Dietrich R. T. Zahn, Hans Wägner, Andrei Yu Kobitski and G. A. Kachurin and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

К. С. Журавлев

266 papers receiving 1.9k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
К. С. Журавлев Russia 21 1.1k 1.1k 917 534 413 295 2.0k
N. Dietz United States 22 803 0.7× 826 0.8× 595 0.6× 770 1.4× 351 0.8× 129 1.7k
E. Kamińska Poland 24 947 0.9× 1.3k 1.2× 730 0.8× 522 1.0× 227 0.5× 189 2.0k
Ludovic Largeau France 26 1.1k 1.0× 914 0.9× 649 0.7× 365 0.7× 539 1.3× 108 1.8k
V. Gottschalch Germany 22 697 0.6× 1.0k 1.0× 998 1.1× 355 0.7× 381 0.9× 145 1.7k
S. Rubini Italy 27 1.0k 0.9× 1.2k 1.1× 1.2k 1.3× 544 1.0× 989 2.4× 140 2.2k
T. S. Ravi United States 18 768 0.7× 576 0.5× 588 0.6× 711 1.3× 352 0.9× 66 1.5k
S. Oktyabrsky United States 25 1.2k 1.1× 1.9k 1.8× 958 1.0× 453 0.8× 368 0.9× 192 2.7k
N. Cherkashin France 27 938 0.8× 1.7k 1.5× 851 0.9× 249 0.5× 442 1.1× 146 2.2k
S. Marcinkevičius Sweden 27 688 0.6× 1.1k 1.0× 1.1k 1.2× 894 1.7× 282 0.7× 131 1.9k
А. В. Мудрый Belarus 18 1.3k 1.2× 1.0k 1.0× 720 0.8× 1.1k 2.1× 316 0.8× 121 2.2k

Countries citing papers authored by К. С. Журавлев

Since Specialization
Citations

This map shows the geographic impact of К. С. Журавлев's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by К. С. Журавлев with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites К. С. Журавлев more than expected).

Fields of papers citing papers by К. С. Журавлев

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by К. С. Журавлев. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by К. С. Журавлев. The network helps show where К. С. Журавлев may publish in the future.

Co-authorship network of co-authors of К. С. Журавлев

This figure shows the co-authorship network connecting the top 25 collaborators of К. С. Журавлев. A scholar is included among the top collaborators of К. С. Журавлев based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with К. С. Журавлев. К. С. Журавлев is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mansurov, V. G., et al.. (2025). Polytypism phenomenon in GaN nanocrystals grown on a van der Waals surface. CrystEngComm. 27(15). 2307–2316.
2.
Журавлев, К. С., et al.. (2024). Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms. Acta Materialia. 270. 119854–119854. 1 indexed citations
3.
Малин, Т. В., et al.. (2024). Effect of AlN Interlayer Thickness on 2DEG Parameters in AlGaN/AlN/GaN HEMT Structures. 8467. 120–125. 1 indexed citations
4.
Дмитриев, Д. В., et al.. (2024). Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate. Nanomaterials. 14(22). 1842–1842.
5.
Малин, Т. В., V. G. Mansurov, Tatyana A. Gavrilova, et al.. (2024). Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. Thin Solid Films. 791. 140246–140246. 6 indexed citations
6.
7.
Малин, Т. В., V. G. Mansurov, S. V. Goryaĭnov, et al.. (2024). Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation. Surfaces and Interfaces. 51. 104817–104817. 2 indexed citations
8.
Mansurov, V. G., et al.. (2024). Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure. Applied Surface Science. 655. 159595–159595. 2 indexed citations
9.
10.
Mansurov, V. G., Т. В. Малин, К. С. Журавлев, et al.. (2023). Local phonon imaging of AlN nanostructures with nanoscale spatial resolution. Nanoscale Advances. 5(10). 2820–2830. 4 indexed citations
11.
Малин, Т. В., et al.. (2023). Effect of growth temperature of NH3-MBE grown GaN-on-Si layers on donor concentration and leakage currents. Journal of Crystal Growth. 626. 127459–127459. 1 indexed citations
12.
Малин, Т. В., et al.. (2022). Modification of the surface energy and morphology of GaN monolayers on the AlN surface in an ammonia flow. Applied Physics Letters. 120(5). 6 indexed citations
13.
Журавлев, К. С., et al.. (2022). AlGaAs/InGaAs/GaAs heterostructures for pHEMT switching transistors. Письма в журнал технической физики. 48(9). 18–18.
14.
Гутаковский, А. К., et al.. (2022). InGaAlAs/InAlAs heterostructures for electro-absorption modulator. Письма в журнал технической физики. 48(7). 33–33. 1 indexed citations
15.
Малин, Т. В., et al.. (2019). Donor–acceptor pair emission via defects with strong electron–phonon coupling in heavily doped Al x Ga 1− x N:Si layers with Al content x  > 0.5. Japanese Journal of Applied Physics. 58(SC). SCCB27–SCCB27. 4 indexed citations
16.
Mansurov, V. G., et al.. (2016). Model of photoluminescence temperature dependence in GaN/AlN quantum dot structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(5-6). 289–291. 2 indexed citations
17.
Perevalov, Timofey V., et al.. (2014). The origin of 2.7 eV blue luminescence band in zirconium oxide. Journal of Applied Physics. 116(24). 37 indexed citations
18.
Ратников, В. В., R. N. Kyutt, A. N. Smirnov, et al.. (2013). Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane. Crystallography Reports. 58(7). 1023–1029. 3 indexed citations
19.
Журавлев, К. С., et al.. (1996). Effect of the cracking zone temperature of a solid state arsenic source on the composition of background impurities in GaAs obtained by molecular beam epitaxy. Semiconductors. 30(9). 891–898. 1 indexed citations
20.
Alperovich, V. L., et al.. (1989). Mobility of the Bloch point along the Bloch line. 50. 476. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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