M. P. Scheglov

815 total citations
60 papers, 608 citations indexed

About

M. P. Scheglov is a scholar working on Electronic, Optical and Magnetic Materials, Materials Chemistry and Electrical and Electronic Engineering. According to data from OpenAlex, M. P. Scheglov has authored 60 papers receiving a total of 608 indexed citations (citations by other indexed papers that have themselves been cited), including 46 papers in Electronic, Optical and Magnetic Materials, 36 papers in Materials Chemistry and 25 papers in Electrical and Electronic Engineering. Recurrent topics in M. P. Scheglov's work include Ga2O3 and related materials (34 papers), ZnO doping and properties (25 papers) and Advanced Photocatalysis Techniques (20 papers). M. P. Scheglov is often cited by papers focused on Ga2O3 and related materials (34 papers), ZnO doping and properties (25 papers) and Advanced Photocatalysis Techniques (20 papers). M. P. Scheglov collaborates with scholars based in Russia, United States and Japan. M. P. Scheglov's co-authors include В. И. Николаев, А. И. Печников, С. И. Степанов, A. V. Chikiryaka, О. Ф. Вывенко, V. A. Sanina, A. Y. Polyakov, Е. И. Головенчиц, А. V. Аlmaev and E. B. Yakimov and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

M. P. Scheglov

56 papers receiving 592 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. P. Scheglov Russia	14	456	451	232	231	83	60	608
А. И. Печников Russia	17	765 1.7×	722 1.6×	457 2.0×	232 1.0×	134 1.6×	81	878
Mikio Yamamuka Japan	14	460 1.0×	752 1.7×	206 0.9×	509 2.2×	107 1.3×	35	930
Mukesh C. Dimri Estonia	18	592 1.3×	712 1.6×	81 0.3×	337 1.5×	58 0.7×	31	858
Zhuogeng Lin China	9	206 0.5×	286 0.6×	103 0.4×	195 0.8×	47 0.6×	26	399
Thaddeus J. Asel United States	13	545 1.2×	672 1.5×	249 1.1×	216 0.9×	76 0.9×	31	747
Geoffrey M. Foster United States	10	413 0.9×	444 1.0×	228 1.0×	176 0.8×	87 1.0×	23	553
Trevor L. Goodrich United States	12	323 0.7×	569 1.3×	73 0.3×	185 0.8×	66 0.8×	15	653
А. В. Мосунов Russia	14	349 0.8×	659 1.5×	86 0.4×	368 1.6×	79 1.0×	118	756
Liang-Chiun Chao Taiwan	15	126 0.3×	473 1.0×	123 0.5×	392 1.7×	70 0.8×	46	638

Countries citing papers authored by M. P. Scheglov

Since Specialization

Citations

This map shows the geographic impact of M. P. Scheglov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. P. Scheglov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. P. Scheglov more than expected).

Fields of papers citing papers by M. P. Scheglov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. P. Scheglov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. P. Scheglov. The network helps show where M. P. Scheglov may publish in the future.

Co-authorship network of co-authors of M. P. Scheglov

This figure shows the co-authorship network connecting the top 25 collaborators of M. P. Scheglov. A scholar is included among the top collaborators of M. P. Scheglov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. P. Scheglov. M. P. Scheglov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Аlmaev, А. V., В. И. Николаев, M. P. Scheglov, et al.. (2024). UV Detectors Based on In₂O₃–Ga₂O₃ Composite Films. IEEE Sensors Journal. 24(17). 27401–27410. 1 indexed citations

Аlmaev, А. V., et al.. (2024). Self-powered UVC detectors based on α-Ga₂O₃ with enchanted speed performance. Journal of Semiconductors. 45(8). 82502–82502. 4 indexed citations

Аlmaev, А. V., et al.. (2024). High-speed performance self-powered short wave ultraviolet radiation detectors based on κ(ε)-Ga₂O₃. Journal of Semiconductors. 45(4). 42502–42502. 10 indexed citations

Polyakov, A. Y., In‐Hwan Lee, В. И. Николаев, et al.. (2023). Properties of κ‐Ga₂O₃ Prepared by Epitaxial Lateral Overgrowth. Advanced Materials Interfaces. 12(2). 8 indexed citations

Николаев, В. И., С. И. Степанов, А. И. Печников, et al.. (2023). Record Thick κ(ε)-Ga2O3 Epitaxial Layers Grown on GaN/c-Sapphire. Technical Physics. 68(12). 689–694. 1 indexed citations

Аlmaev, А. V., et al.. (2023). Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga ₂ O ₃ Films With Giant Responsivity. IEEE Sensors Journal. 23(17). 19245–19255. 24 indexed citations

Yakimov, E. B., A. Y. Polyakov, В. И. Николаев, et al.. (2023). Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy. Nanomaterials. 13(7). 1214–1214. 17 indexed citations

Николаев, В. И., A. Y. Polyakov, Anatolii V. Morozov, et al.. (2023). Editors’ Choice—Structural, Electrical, and Luminescent Properties of Orthorhombic κ-Ga₂O₃ Grown by Epitaxial Lateral Overgrowth. ECS Journal of Solid State Science and Technology. 12(11). 115001–115001. 7 indexed citations

Stepanov, S. I., А. И. Печников, M. P. Scheglov, A. V. Chikiryaka, & В. И. Николаев. (2023). Growth of Thick ε(κ)-Ga2O3 Films by Halide Vapor Phase Epitaxy. Technical Physics Letters. 49(S2). S142–S145. 1 indexed citations

10.

Николаев, В. И., A. Y. Polyakov, А. И. Печников, et al.. (2023). Record thick kappa(ε)-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- epitaxial layers grown on GaN/c-sapphire. Журнал технической физики. 68(3). 376–376. 2 indexed citations

11.

Polyakov, A. Y., В. И. Николаев, А. И. Печников, et al.. (2022). Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates. APL Materials. 10(6). 25 indexed citations

12.

Аlmaev, А. V., В. И. Николаев, А. И. Печников, et al.. (2022). Low-resistivity gas sensors based on the In2O3-Ga2O3 mixed compounds films. Materials Today Communications. 34. 105241–105241. 11 indexed citations

13.

Polyakov, A. Y., В. И. Николаев, С. А. Степанов, et al.. (2022). Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers. Journal of Applied Physics. 131(21). 19 indexed citations

14.

Polyakov, A. Y., В. И. Николаев, С. А. Степанов, et al.. (2022). Effects of sapphire substrate orientation on Sn-doped α-Ga₂O₃ grown by halide vapor phase epitaxy using α-Cr₂O₃ buffers. Journal of Physics D Applied Physics. 55(49). 495102–495102. 10 indexed citations

15.

Николаев, В. И., et al.. (2022). Gas-sensing properties of In-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- alloy films. Письма в журнал технической физики. 48(7). 76–76.

16.

Николаев, В. И., et al.. (2022). Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure. Письма в журнал технической физики. 48(11). 61–61.

17.

Печников, А. И., et al.. (2022). Growth of thick ε(kappa)-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- films by halide vapor phase epitaxy. Письма в журнал технической физики. 48(10). 32–32. 1 indexed citations

18.

Polyakov, A. Y., В. И. Николаев, С. А. Тарелкин, et al.. (2021). Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates. Journal of Applied Physics. 129(18). 23 indexed citations

19.

Kyutt, R. N. & M. P. Scheglov. (2013). Three-wave X-ray diffraction in distorted epitaxial structures. Journal of Applied Crystallography. 46(4). 861–867. 4 indexed citations

20.

Sanina, V. A., et al.. (2011). Magnetic properties of multiferroics–semiconductors Eu_1−xCe_xMn₂O₅. Journal of Physics Condensed Matter. 23(45). 456003–456003. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact