N.I. Kuznetsov

787 citations

52 papers · 628 · h-index 14

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 38
- Silicon Carbide Semiconductor Technologies 31
- Semiconductor materials and devices 18
- Electromagnetic Compatibility and Noise Suppression 5
Condensed Matter Physics 19
- GaN-based semiconductor devices and materials 19

Co-authors: V. Dmitriev (21 shared papers)K. G. Irvine (4 shared papers)C. H. Carter (2 shared papers)A. S. Zubrilov (9 shared papers)E. V. Kalinina (3 shared papers)Elena Kalinina (2 shared papers)Yu. Melnik (7 shared papers)A. E. Nikolaev (8 shared papers)
Journals: Materials Science and Engineering B (5 papers)Applied Physics Letters (3 papers)MRS Internet Journal of Nitride Semiconductor Research (2 papers)Diamond and Related Materials (2 papers)Applied Surface Science (1 paper)
Partner nations: Russia United States Uzbekistan

In The Last Decade

N.I. Kuznetsov

47 papers receiving 596 citations

Peers

Countries citing papers authored by N.I. Kuznetsov

Since Specialization

Citations

This map shows the geographic impact of N.I. Kuznetsov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N.I. Kuznetsov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N.I. Kuznetsov more than expected).

Fields of papers citing papers by N.I. Kuznetsov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N.I. Kuznetsov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N.I. Kuznetsov. The network helps show where N.I. Kuznetsov may publish in the future.

Co-authors

The 25 scholars most cited alongside N.I. Kuznetsov, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with N.I. Kuznetsov Line = papers co-authored together N.I. Kuznetsov links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

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#	Work
1	Electric breakdown in GaN p-n junctions Applied Physics Letters ·V. Dmitriev, K. G. Irvine, C. H. Carter, N.I. Kuznetsov, E. V. Kalinina	1996	91
2	Schottky barriers on n-GaN grown on SiC Journal of Electronic Materials ·Elena Kalinina, N.I. Kuznetsov, V. Dmitriev, K. G. Irvine, C. H. Carter	1996	86
3	Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates Applied Physics Letters ·N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, Yu. Melnik, V. Dmitriev	1999	53
4	Strain relaxation in GaN layers grown on porous GaN sublayers MRS Internet Journal of Nitride Semiconductor Research ·M. G. Mynbaeva, A. N. Titkov, A. Kryzhanovski, I. S. Kotousova, A. S. Zubrilov, В. В. Ратников, V. Yu. Davydov, N.I. Kuznetsov, K. D. Mynbaev, D. Tsvetkov, С. И. Степанов, A. E. Cherenkov, V. Dmitriev	1999	44
5	Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates Applied Physics Letters ·M. G. Mynbaeva, Stephen E. Saddow, Galyna Melnychuk, I. P. Nikitina, M. P. Scheglov, A. А. Ситникова, N.I. Kuznetsov, K. D. Mynbaev, V. Dmitriev	2001	36
6	Automated laser excited atomic fluorescence spectrometer for determination of trace concentrations of elements Spectrochimica Acta Part B Atomic Spectroscopy ·В. М. Апатин, Boris V. Arkhangelskii, Mikhail A. Bolshov, V V Ermolov, V.G. Koloshnikov, Oleg N. Kompanetz, N.I. Kuznetsov, E. L. Mikhaǐlov, V S Shishkovskiĭ, Claude F. Boutron	1989	34
7	Deep centers and electroluminescence in 4HSiC diodes with a p-type base region Materials Science and Engineering B ·N.I. Kuznetsov, A. S. Zubrilov	1995	33
8	Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy physica status solidi (a) ·Yu. Melnik, D. Tsvetkov, А. И. Печников, И.П. Никитина, N.I. Kuznetsov, V. Dmitriev	2001	21
9	Structural and electrical properties of Schottky barriers on n-GaN Diamond and Related Materials ·Elena Kalinina, N.I. Kuznetsov, A.I. Babanin, V. Dmitriev, Andrey Shchukarev	1997	20
10	Electrical characteristics of GaN/6H-SiC n-p heterojunctions Materials Science and Engineering B ·N.I. Kuznetsov, A.E. Gubenco, A. E. Nikolaev, Yu. Melnik, M.N. Blashenkov, I. P. Nikitina, V. Dmitriev	1997	18
11	Liquid-phase oxidation of benzothiophene and dibenzothiophene by cumyl hydroperoxide in the presence of catalysts based on supported metal oxides Kinetics and Catalysis ·Н. И. Кузнецова, L. G. Detusheva, N.I. Kuznetsov, V. K. Duplyakin, В. А. Лихолобов	2008	17
12	AlN substrates: fabrication via vapor phase growth and characterization physica status solidi (a) ·Yu. Melnik, V. Soukhoveev, V. Ivantsov, V. E. Sizov, А. И. Печников, K.V. Tsvetkov, O. V. Kovalenkov, V. Dmitriev, A. E. Nikolaev, N.I. Kuznetsov, E. F. da Silveira, Jaime A. Freitas	2003	16
13	Properties of AlN Layers Grown on SiC Substrates in Wide Temperature Range by HVPE Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Oleg Ledyaev, A. E. Cherenkov, A. E. Nikolaev, И.П. Никитина, N.I. Kuznetsov, M. Dunaevski, A. N. Titkov, V. A. Dmitriev	2002	16
14	Properties of Si-Doped GaN Layers Grown by HVPE physica status solidi (a) ·А. В. Фомин, A. E. Nikolaev, И.П. Никитина, A. S. Zubrilov, M. G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D. Tsvetkov	2001	14
15	Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density Materials Science and Engineering B ·V. Dmitriev, S. Rendakova, N.I. Kuznetsov, N.S. Savkina, А. А. Андреев, M. G. Rastegaeva, M. G. Mynbaeva, Andrey Morozov	1999	12
16	Improved Al/Si ohmic contacts to p-type 4H-SiC Materials Science and Engineering B ·Roumen Kakanakov, Liliana Kassamakova, Ivan Kassamakov, Konstantinos Zekentes, N.I. Kuznetsov	2001	12
17	GaN PN-Structures Grown by Hydride Vapor Phase Epitaxy MRS Proceedings ·A. E. Nikolaev, Yu. Melnik, N.I. Kuznetsov, Anatoly M. Strel’chuk, A.P. Kovarsky, Konstantin Vassilevski, V. Dmitriev	1997	10
18	Schottky Barriers on p-GaN MRS Proceedings ·N.I. Kuznetsov, E. V. Kalinina, V. A. Soloviev, V. Dmitriev	1995	9
19	Electric Breakdown in Nitride PN Junctions MRS Proceedings ·V. Dmitriev, N.I. Kuznetsov, K. G. Irvine, C.H. Carter	1995	8
20	Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density MRS Proceedings ·S. Rendakova, N.I. Kuznetsov, N.S. Savkina, M. G. Rastegaeva, А. А. Андреев, M. K. MINBAEVA, Andrey Morozov, V. Dmitriev	1998	7

About N.I. Kuznetsov

N.I. Kuznetsov is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Epidemiology, having authored 52 papers that have together received 628 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (31 papers), GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (10 papers), Ga2O3 and related materials (6 papers), Metal and Thin Film Mechanics (5 papers), Electromagnetic Compatibility and Noise Suppression (5 papers) and Liver Disease Diagnosis and Treatment (4 papers). The work is most often cited by research in Condensed Matter Physics (396 citations), Electronic, Optical and Magnetic Materials (168 citations), Electrical and Electronic Engineering (418 citations), Atomic and Molecular Physics, and Optics (186 citations) and Mechanics of Materials (79 citations). N.I. Kuznetsov has collaborated with scholars based in Russia, United States and Uzbekistan. Frequent co-authors include V. Dmitriev, K. G. Irvine, C. H. Carter, A. S. Zubrilov, E. V. Kalinina, Elena Kalinina, Yu. Melnik, A. E. Nikolaev, M. G. Mynbaeva and D. Tsvetkov. Their work appears in journals such as Materials Science and Engineering B, Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, Diamond and Related Materials and Applied Surface Science.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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N.I. Kuznetsov

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