M. P. Shcheglov

405 citations

64 papers · 294 indexed · h-index 8

Co-authors: R. N. Kyutt В. В. Ратников E. V. Konenkova В. Н. Бессолов L. M. Sorokin А. В. Осипов С. А. Кукушкін Н. А. Феоктистов
Topics: GaN-based semiconductor devices and materials (31 papers)Ga2O3 and related materials (17 papers)Silicon Carbide Semiconductor Technologies (17 papers)
Cited by: Condensed Matter Physics Ceramics and Composites Electronic, Optical and Magnetic Materials
Journals: Physical Review B Journal of Crystal Growth physica status solidi (a)
Partner nations: Russia Poland Sweden

In The Last Decade

M. P. Shcheglov

55 papers receiving 275 citations

Peers

Countries citing papers authored by M. P. Shcheglov

Since Specialization

Citations

This map shows the geographic impact of M. P. Shcheglov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. P. Shcheglov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. P. Shcheglov more than expected).

Fields of papers citing papers by M. P. Shcheglov

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. P. Shcheglov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. P. Shcheglov. The network helps show where M. P. Shcheglov may publish in the future.

Co-authorship network of co-authors of M. P. Shcheglov

This figure shows the co-authorship network connecting the top 25 collaborators of M. P. Shcheglov. A scholar is included among the top collaborators of M. P. Shcheglov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. P. Shcheglov. M. P. Shcheglov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Synthesis of thin single-crystalline α-Cr-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition 2023 ·Письма в журнал технической физики ·В. И. Николаев,(unknown),(unknown),С. И. Степанов,A. V. Chikiryaka,M. P. Shcheglov,A. Y. Polyakov	1
2	A New Method for Relaxation of Elastic Stresses During the Growth of Heteroepitaxial Films 2023 ·(unknown),С. А. Кукушкін,А. В. Осипов,(unknown),M. P. Shcheglov	1
3	Synthesis of Thin Single-Crystalline α-Cr2O3 Layers on Sapphire Substrates by Ultrasonic-Assisted Chemical Vapor Deposition 2023 ·Technical Physics Letters ·В. И. Николаев,(unknown),(unknown),С. И. Степанов,A. V. Chikiryaka,M. P. Shcheglov,(unknown)	0
4	Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate 2020 ·Technical Physics Letters ·В. И. Николаев,А. И. Печников,(unknown),A. V. Chikiryaka,M. P. Shcheglov,V. V. Nikolaev,С. И. Степанов,A.A. Vasil'ev,Ivan Shchemerov,(unknown)	6
5	Толстые эпитаксиальные слои alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- : Sn на профилированной сапфировой подложке 2020 ·Письма в журнал технической физики ·В. И. Николаев,А. И. Печников,(unknown),(unknown),M. P. Shcheglov,(unknown),С. И. Степанов,А. А. Васильев,(unknown),(unknown)	0
6	Эпитаксия слоев GaN(0001) или GaN(1011) на подложке Si(100) 2019 ·Письма в журнал технической физики ·В. Н. Бессолов,M. E. Kompan,E. V. Konenkova,V. N. Panteleev,S. N. Rodin,M. P. Shcheglov	2
7	Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method 2015 ·Physics of the Solid State ·(unknown),(unknown),(unknown),(unknown),I. L. Shul’pina,M. P. Shcheglov	1
8	Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane 2013 ·Crystallography Reports ·В. В. Ратников,R. N. Kyutt,A. N. Smirnov,V. Yu. Davydov,M. P. Shcheglov,Т. В. Малин,К. С. Журавлев	3
9	X-ray diffraction study of short-period AlN/GaN superlattices 2013 ·Crystallography Reports ·R. N. Kyutt,M. P. Shcheglov,В. В. Ратников,M. A. Yagovkina,V. Yu. Davydov,A. N. Smirnov,(unknown),E. E. Zavarin,W. V. Lundin	4
10	GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates 2012 ·Technical Physics Letters ·(unknown),(unknown),(unknown),(unknown),V. N. Panteleev,(unknown),(unknown),M. P. Shcheglov	2
11	A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum 2007 ·Semiconductors ·A. А. Lebedev,(unknown),(unknown),(unknown),С. П. Лебедев,D. K. Nelson,B. S. Razbirin,M. P. Shcheglov,A. S. Tregubova,(unknown),R. Yakimova	13
12	Effect of structural imperfection on the spectrum of deep levels in 6H-SiC 2001 ·Semiconductors ·A. А. Lebedev,(unknown),A. S. Tregubova,Е. В. Богданова,M. P. Shcheglov,(unknown)	1
13	Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer 2000 ·Physics of the Solid State ·V. V. Bel’kov,(unknown),(unknown),(unknown),L. M. Sorokin,M. P. Shcheglov	2
14	Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum 2000 ·Physics of the Solid State ·L. M. Sorokin,A. S. Tregubova,M. P. Shcheglov,(unknown),N.S. Savkina	3
15	Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum 2000 ·Semiconductors ·A. A. Lebedev,(unknown),(unknown),(unknown),M. P. Shcheglov,Rositsa Yakimova,Mikael Syväjärvi,Erik Janzén	5
16	Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements 1999 ·Physics of the Solid State ·R. N. Kyutt,В. В. Ратников,(unknown),M. P. Shcheglov	22
17	Influence of vapor phase composition in a growth cell on the doping level of silicon carbide epitaxial layers grown by vacuum sublimation 1996 ·Semiconductors ·(unknown),(unknown),M. P. Shcheglov,M. G. Rastegaeva,V. E. Chelnokov,(unknown)	1
18	Is the green electroluminescence of p-n structures in 6H SiC due to crystalline inclusions of the 3C polytype? 1995 ·Technical Physics Letters ·(unknown),M. P. Shcheglov,(unknown)	1
19	Reasons for the formation of crystallites in YBa 2 Cu 3 O 7 - x films oriented with the c axis parallel to the substrate plane 1995 ·Yu. A. Boĭkov,Z. G. Ivanov,E. A. Olson,В. А. Данилов,T. Claeson,M. P. Shcheglov,(unknown)	1
20	Dislocation structure of epitaxial GaSb films grown on (001) GaAs substrates by molecular beam epitaxy 1993 ·Physics of the Solid State ·R. N. Kyutt,Roland W. Scholz,S. Ruvimov,T. S. Argunova,(unknown),S. V. Ivanov,P. S. Kop’ev,L. M. Sorokin,M. P. Shcheglov,A. Tybulewicz	5

About M. P. Shcheglov

M. P. Shcheglov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 64 papers that have together received 294 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (31 papers), Ga2O3 and related materials (17 papers) and Silicon Carbide Semiconductor Technologies (17 papers). The work is most often cited by research in Condensed Matter Physics (138 citations), Ceramics and Composites (22 citations) and Electronic, Optical and Magnetic Materials (66 citations). M. P. Shcheglov has collaborated with scholars based in Russia, Poland and Sweden. Frequent co-authors include R. N. Kyutt, В. В. Ратников, E. V. Konenkova, В. Н. Бессолов, L. M. Sorokin, А. В. Осипов, С. А. Кукушкін, Н. А. Феоктистов, S. N. Rodin and V. Yu. Davydov. Their work appears in journals such as Physical Review B, Journal of Crystal Growth and physica status solidi (a).

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