E. V. Lutsenko

809 citations

77 papers · 656 indexed · h-index 14

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 46
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials 25
Acoustics and Ultrasonics
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor Quantum Structures and Devices 41
Materials Chemistry
- ZnO doping and properties 14
- Luminescence Properties of Advanced Materials 8
Electrical and Electronic Engineering
- Solid State Laser Technologies 12
- Semiconductor Lasers and Optical Devices 7
- Semiconductor materials and devices 7

Co-authors: G. P. Yablonskii S. V. Ivanov V. N. Jmerik M. Heuken A. А. Ситникова О. Б. Тагиев B. Schineller T. G. Naghiyev
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Acoustics and Ultrasonics
Journals: Journal of Crystal Growth (9 papers)physica status solidi (a) (5 papers)Applied Physics Letters (5 papers)
Partner nations: Belarus Germany Russia

In The Last Decade

E. V. Lutsenko

71 papers receiving 648 citations

Peers

Countries citing papers authored by E. V. Lutsenko

Since Specialization

Citations

This map shows the geographic impact of E. V. Lutsenko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. V. Lutsenko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. V. Lutsenko more than expected).

Fields of papers citing papers by E. V. Lutsenko

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. V. Lutsenko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. V. Lutsenko. The network helps show where E. V. Lutsenko may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. V. Lutsenko, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. V. Lutsenko Line = papers co-authored together E. V. Lutsenko links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Monolayer‐Range Compositional Modulations in Al_xGa_1−xN_{(x = 0.6–0.75)} Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux physica status solidi (a) ·V. N. Jmerik,Д. В. Нечаев,M. A. Yagovkina,A. А. Ситникова,S. I. Troshkov,Tatyana D. Gladysheva,E. V. Lutsenko,Sergei Rouvimov	2022	1
2	Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates Journal of Applied Spectroscopy ·Magda Ibrahim,Wah Lt,Aslam Mohamed,Michael Igbinoba,リアオバオ,E. V. Lutsenko	2022	2
3	Stimulated emission, photoluminescence, and localisation of nonequilibrium charge carriers in ultrathin (monolayer) GaN/AlN quantum wells Quantum Electronics ·E. V. Lutsenko,Tatyana D. Gladysheva,Jianao Yao,Magda Ibrahim,Д. В. Нечаев,V. N. Jmerik,S. V. Ivanov	2019	4
4	High photoluminescence stability of CaGa 4 O 7 :Eu 3+ red phosphor in wide excitation intensity interval Optical Materials ·崔佳,E. V. Lutsenko,Tatyana D. Gladysheva,G. P. Yablonskii,T. G. Naghiyev,Sebastián Vivas,О. Б. Тагиев	2016	32
5	Stimulated emission and lasing in Cu(In,Ga)Se₂thin films Journal of Physics D Applied Physics ·D P Ivanov,Umashanker Gupta Chowdhory,E. V. Lutsenko,G. P. Yablonskii,А. В. Мудрый,فاتن همام حماد محمود,М. V. Yakushev,Robert Martin	2016	2
6	Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al₂O₃ by using flux- and temperature-modulated techniques Journal of materials research/Pratt's guide to venture capital sources ·V. N. Jmerik,Д. В. Нечаев,Sergei Rouvimov,В. В. Ратников,P. S. Kop’ev,Hoefling,E. V. Lutsenko,G. P. Yablonskii,В Л Лакомкин,K. Reinmuth,Ahmed Y. Alyamani,S. V. Ivanov	2015	18
7	Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults Journal of Crystal Growth ·E. V. Lutsenko,Tatyana D. Gladysheva,Umashanker Gupta Chowdhory,G. P. Yablonskii,Kim Scholtz,Hyangsook Park,Ahmed Y. Alyamani,Meng Xiaozh,H. Kalisch,B. Reuters,M. Heuken,Andrei Vescan,G. Naresh‐Kumar,C. Trager‐Cowan	2015	3
8	MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers Journal of Crystal Growth ·Ö. Tuna,H. Hahn,H. Kalisch,C. Giesen,Andrei Vescan,Tatyana D. Gladysheva,Umashanker Gupta Chowdhory,E. V. Lutsenko,G. P. Yablonskii,M. Heuken	2012	3
9	Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers Journal of Applied Spectroscopy ·Umashanker Gupta Chowdhory,E. V. Lutsenko,G. P. Yablonskii,О.F. Kolomys,V. V. Strelchuk,Trabajo Remunerado,M. Ya. Valakh	2011	1
10	Temperature dependence of the bandgap width in FeIn2Se4 single crystals Journal of Applied Spectroscopy ·I. V. Bodnar,Wilhelm Stein,H. Shah,E. V. Lutsenko	2011	5
11	Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma‐assisted molecular beam epitaxy on c‐Al₂O₃ physica status solidi (a) ·V. N. Jmerik,A. M. Mizerov,T. V. Shubina,А. А. Торопов,Claudine Lacerda Oliveira,A. А. Ситникова,M. A. Yagovkina,P. S. Kop’ev,E. V. Lutsenko,Magda Ibrahim,Karl Håkan Nordgren,G. P. Yablonskii,B. Ḿonemar,S. V. Ivanov	2010	8
12	Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Journal of Crystal Growth ·Meng Xiaozh,B. Reuters,Vitowe Batch,Ronan-Bentle Se,E. V. Lutsenko,G. P. Yablonskii,J. Woitok,M. Heuken,H. Kalisch,Rolf A. Jansen	2010	13
13	Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates Journal of Applied Spectroscopy ·Vitaly Z. Zubialevich,E. V. Lutsenko,Umashanker Gupta Chowdhory,Xin-qi Pei,Magda Ibrahim,G. P. Yablonskii,M. Danailov,B. Ressel,Alexander Demidovich,J. Woitok,H. Kalisch,Y. Dikme,Rolf A. Jansen,M. Lünenbürger,B. Schineller,M. Heuken	2008	2
14	Correlation of CdSe quantum dot morphology, structure design and lasing properties of optically pumped green CdSe/ZnMgSSe lasers physica status solidi (a) ·S. V. Ivanov,O. G. Lyublinskaya,I. V. Sedova,S. V. Sorokin,А. А. Торопов,P. S. Kop’ev,E. V. Lutsenko,Michael Igbinoba,Wang Zhan-xing,Xin-qi Pei,G. P. Yablonskii	2007	3
15	Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE physica status solidi (a) ·E. V. Lutsenko,Umashanker Gupta Chowdhory,Magda Ibrahim,Judith Serra Corcoll,Karl Håkan Nordgren,Vitaly Z. Zubialevich,Xin-qi Pei,Roger Piferrer,T. Malinauskas,K. Jarašiūnas,Karolis Kazlauskas,Saulius Juršėnas,S. Miasojedovas,A. Žukauskas,Y. Dikme,H. Kalisch,Rolf A. Jansen,B. Schineller,M. Heuken	2006	2
16	Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN Journal of Applied Physics ·Marianne Germain,E. Kartheuser,Xin-qi Pei,E. V. Lutsenko,Igor P. Marko,Umashanker Gupta Chowdhory,Roger Piferrer,K. Heime,M. Heuken,B. Schineller	2002	13
17	Multiple Quantum Well InGaN/GaN Blue Optically Pumped Lasers Operating in the Spectral Range of 450-470 nm physica status solidi (a) ·G. P. Yablonskii,E. V. Lutsenko,Umashanker Gupta Chowdhory,Igor P. Marko,Xin-qi Pei,Vitaly Z. Zubialevich,YI Kang,H. Protzmann,Tomohiro Fukumasu,B. Schineller,M. Heuken	2001	6
18	Blue InGaN/GaN multiple-quantum-well optically pumped lasers with emission wavelength in the spectral range of 450–470 nm Applied Physics Letters ·G. P. Yablonskii,E. V. Lutsenko,Umashanker Gupta Chowdhory,Igor P. Marko,Xin-qi Pei,Vitaly Z. Zubialevich,А. В. Мудрый,Oliver Schön,H. Protzmann,M. Lünenbürger,B. Schineller,M. Heuken,H. Kalisch,K. Heime	2001	12
19	Stimulated Emission, Electro- and Photoluminescence of InGaN/GaN EL-Test and SQW Heterostructures Grown by MOVPE physica status solidi (a) ·G. P. Yablonskii,E. V. Lutsenko,Igor P. Marko,Umashanker Gupta Chowdhory,А. В. Мудрый,A. I. Stognij,YI Kang,H. Protzmann,Tomohiro Fukumasu,Alyaa El-khawas,M. Heuken,K. Heime	2000	2
20	Free-exciton spectra in heteroepitaxial ZnSe/GaAs layers Physical review. B, Condensed matter ·Xin-qi Pei,Yury P. Rakovich,E. V. Lutsenko,Julio César Iglesias Monsalve,Roger Piferrer,Azam Taufikurrakhman,M. Heuken	2000	6

About E. V. Lutsenko

E. V. Lutsenko is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Acoustics and Ultrasonics and Materials Chemistry, having authored 77 papers that have together received 656 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (46 papers), Semiconductor Quantum Structures and Devices (41 papers), Ga2O3 and related materials (25 papers), ZnO doping and properties (14 papers), Solid State Laser Technologies (12 papers), Luminescence Properties of Advanced Materials (8 papers), Semiconductor Lasers and Optical Devices (7 papers) and Semiconductor materials and devices (7 papers). The work is most often cited by research in Condensed Matter Physics (397 citations), Electronic, Optical and Magnetic Materials (256 citations), Acoustics and Ultrasonics (8 citations), Atomic and Molecular Physics, and Optics (259 citations) and Materials Chemistry (340 citations). E. V. Lutsenko has collaborated with scholars based in Belarus, Germany and Russia. Frequent co-authors include G. P. Yablonskii, S. V. Ivanov, V. N. Jmerik, M. Heuken, A. А. Ситникова, О. Б. Тагиев, B. Schineller, T. G. Naghiyev, A. M. Mizerov and H. Kalisch. Their work appears in journals such as Journal of Crystal Growth, physica status solidi (a), Applied Physics Letters, physica status solidi (b) and Japanese Journal of Applied Physics.

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