E. Canato

524 total citations
19 papers, 425 citations indexed

About

E. Canato is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, E. Canato has authored 19 papers receiving a total of 425 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Condensed Matter Physics, 17 papers in Electrical and Electronic Engineering and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in E. Canato's work include GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (11 papers). E. Canato is often cited by papers focused on GaN-based semiconductor devices and materials (19 papers), Semiconductor materials and devices (12 papers) and Silicon Carbide Semiconductor Technologies (11 papers). E. Canato collaborates with scholars based in Italy, Belgium and France. E. Canato's co-authors include Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, P. Moens, A. Stockman, Benoit Bakeroot, Carlo De Santi, Alaleh Tajalli, Matteo Borga and Isabella Rossetto and has published in prestigious journals such as Applied Physics Letters, Microelectronics Reliability and Applied Physics Express.

In The Last Decade

E. Canato

18 papers receiving 419 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. Canato Italy 12 392 347 156 79 57 19 425
Alaleh Tajalli Italy 11 429 1.1× 378 1.1× 186 1.2× 70 0.9× 79 1.4× 17 469
Loizos Efthymiou United Kingdom 8 322 0.8× 284 0.8× 134 0.9× 50 0.6× 61 1.1× 22 356
Zhaoke Bian China 11 319 0.8× 321 0.9× 182 1.2× 96 1.2× 51 0.9× 16 400
Hidekazu Umeda Japan 12 441 1.1× 452 1.3× 154 1.0× 39 0.5× 47 0.8× 16 503
Jong‐Won Lim South Korea 11 277 0.7× 261 0.8× 141 0.9× 63 0.8× 74 1.3× 45 336
Jan Šonský Belgium 13 401 1.0× 489 1.4× 139 0.9× 79 1.0× 53 0.9× 32 555
Yorito Kakiuchi Japan 6 432 1.1× 405 1.2× 182 1.2× 82 1.0× 54 0.9× 10 471
Cliff Drowley United States 11 312 0.8× 340 1.0× 155 1.0× 37 0.5× 41 0.7× 14 400
Sébastien Sicre Austria 9 384 1.0× 333 1.0× 137 0.9× 90 1.1× 59 1.0× 19 408
Yuanyuan Shi China 9 363 0.9× 309 0.9× 212 1.4× 61 0.8× 79 1.4× 22 396

Countries citing papers authored by E. Canato

Since Specialization
Citations

This map shows the geographic impact of E. Canato's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Canato with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Canato more than expected).

Fields of papers citing papers by E. Canato

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Canato. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Canato. The network helps show where E. Canato may publish in the future.

Co-authorship network of co-authors of E. Canato

This figure shows the co-authorship network connecting the top 25 collaborators of E. Canato. A scholar is included among the top collaborators of E. Canato based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Canato. E. Canato is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Santi, Carlo De, Gaudenzio Meneghesso, E. Canato, et al.. (2025). Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate. Research Padua Archive (University of Padua). 1–5.
2.
Santi, Carlo De, Matteo Buffolo, E. Canato, et al.. (2024). Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation. IEEE Journal of the Electron Devices Society. 12. 703–709. 3 indexed citations
3.
Stockman, A., E. Canato, Matteo Meneghini, et al.. (2021). Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs. IEEE Transactions on Device and Materials Reliability. 21(2). 169–175. 38 indexed citations
4.
Abid, Idriss, E. Canato, Matteo Meneghini, et al.. (2021). GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal. Applied Physics Express. 14(3). 36501–36501. 9 indexed citations
5.
Meneghini, Matteo, E. Canato, Carlo De Santi, et al.. (2020). Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. Padua Research Archive (University of Padova). 1–4. 6 indexed citations
6.
Canato, E., Matteo Meneghini, Carlo De Santi, et al.. (2020). OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution. Microelectronics Reliability. 114. 113841–113841. 23 indexed citations
7.
Meneghini, Matteo, E. Canato, Carlo De Santi, et al.. (2019). Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress. Applied Physics Letters. 115(5). 35 indexed citations
8.
Tajalli, Alaleh, E. Canato, Matteo Meneghini, et al.. (2019). Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors. Ghent University Academic Bibliography (Ghent University). 1–6. 4 indexed citations
9.
Canato, E., Matteo Borga, Enrico Zanoni, et al.. (2019). $\mu s$-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. Ghent University Academic Bibliography (Ghent University). 1–6. 21 indexed citations
10.
Meneghini, Matteo, Carlo De Santi, Alessandro Barbato, et al.. (2019). Degradation physics of GaN-based lateral and vertical devices. Research Padua Archive (University of Padua). 1. 42–42. 1 indexed citations
11.
Canato, E., Matteo Meneghini, Marco Barbato, et al.. (2019). ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping. Microelectronics Reliability. 100-101. 113334–113334. 17 indexed citations
12.
Borga, Matteo, Matteo Meneghini, E. Canato, et al.. (2019). Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment. Microelectronics Reliability. 100-101. 113461–113461. 18 indexed citations
13.
Stockman, A., E. Canato, Matteo Meneghini, et al.. (2019). Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs. Ghent University Academic Bibliography (Ghent University). 287–290. 44 indexed citations
14.
Stockman, A., E. Canato, Alaleh Tajalli, et al.. (2018). On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. Ghent University Academic Bibliography (Ghent University). 4B.5–1. 46 indexed citations
15.
Tajalli, Alaleh, E. Canato, Matteo Meneghini, et al.. (2018). Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. Microelectronics Reliability. 88-90. 572–576. 16 indexed citations
16.
Meneghini, Matteo, Isabella Rossetto, Matteo Borga, et al.. (2017). Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry. Padua Research Archive (University of Padova). 4B–5.1. 27 indexed citations
17.
Rossetto, Isabella, Matteo Meneghini, E. Canato, et al.. (2017). Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectronics Reliability. 76-77. 298–303. 24 indexed citations
18.
Meneghesso, Gaudenzio, Matteo Meneghini, Isabella Rossetto, et al.. (2017). GaN HEMTs with p-GaN gate: field- and time-dependent degradation. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 10104. 1010419–1010419. 9 indexed citations
19.
Meneghini, Matteo, Isabella Rossetto, Carlo De Santi, et al.. (2017). Reliability and failure analysis in power GaN-HEMTs: An overview. Padua Research Archive (University of Padova). 3B–2.1. 84 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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