Juraj Marek

427 total citations
65 papers, 332 citations indexed

About

Juraj Marek is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Juraj Marek has authored 65 papers receiving a total of 332 indexed citations (citations by other indexed papers that have themselves been cited), including 57 papers in Electrical and Electronic Engineering, 29 papers in Condensed Matter Physics and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Juraj Marek's work include Silicon Carbide Semiconductor Technologies (36 papers), GaN-based semiconductor devices and materials (29 papers) and Semiconductor materials and devices (23 papers). Juraj Marek is often cited by papers focused on Silicon Carbide Semiconductor Technologies (36 papers), GaN-based semiconductor devices and materials (29 papers) and Semiconductor materials and devices (23 papers). Juraj Marek collaborates with scholars based in Slovakia, United States and Austria. Juraj Marek's co-authors include Aleš Chvála, D. Donoval, A. Šatka, Miroslav Mikolášek, Martin Donoval, D. Gregušová, J. Kuzmı́k, Peter Beňo, Ł. Stuchlíková and Jaroslav Kováč and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

Juraj Marek

53 papers receiving 318 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Juraj Marek Slovakia 13 292 172 62 48 47 65 332
Aleš Chvála Slovakia 13 383 1.3× 278 1.6× 123 2.0× 68 1.4× 76 1.6× 77 448
Jesse B. Tucker United States 8 280 1.0× 85 0.5× 78 1.3× 43 0.9× 39 0.8× 28 330
Alex Man Ho Kwan Hong Kong 8 268 0.9× 219 1.3× 53 0.9× 29 0.6× 52 1.1× 15 310
Ho‐Kyun Ahn South Korea 10 256 0.9× 155 0.9× 104 1.7× 48 1.0× 77 1.6× 48 320
V. Khemka United States 15 676 2.3× 88 0.5× 141 2.3× 40 0.8× 47 1.0× 54 691
Megan Snook United States 10 344 1.2× 64 0.4× 81 1.3× 127 2.6× 67 1.4× 31 383
Andrew J. Bayba United States 8 335 1.1× 289 1.7× 66 1.1× 115 2.4× 27 0.6× 17 388
Subhash Pidaparthi United States 12 363 1.2× 313 1.8× 55 0.9× 41 0.9× 156 3.3× 18 426
Yun Huang China 11 291 1.0× 293 1.7× 49 0.8× 44 0.9× 86 1.8× 41 344
Rafael Perez Martinez United States 8 267 0.9× 90 0.5× 97 1.6× 52 1.1× 44 0.9× 27 319

Countries citing papers authored by Juraj Marek

Since Specialization
Citations

This map shows the geographic impact of Juraj Marek's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Juraj Marek with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Juraj Marek more than expected).

Fields of papers citing papers by Juraj Marek

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Juraj Marek. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Juraj Marek. The network helps show where Juraj Marek may publish in the future.

Co-authorship network of co-authors of Juraj Marek

This figure shows the co-authorship network connecting the top 25 collaborators of Juraj Marek. A scholar is included among the top collaborators of Juraj Marek based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Juraj Marek. Juraj Marek is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Marek, Juraj, Gregor Pobegen, Ulrike Großner, Steven Y. Liang, & Zongjin Li. (2023). Silicon Carbide MOSFETs and Special Materials. Trans Tech Publications Ltd. eBooks.
3.
Stuchlíková, Ł., et al.. (2022). Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells Using Transient Spectroscopy. Materials. 15(21). 7621–7621.
4.
Marek, Juraj, et al.. (2022). Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress. Materials. 15(22). 8230–8230. 3 indexed citations
5.
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Chvála, Aleš, Juraj Marek, Ł. Stuchlíková, et al.. (2021). Characterization and evaluation of current transport properties of power SiC Schottky diode. Materials Today Proceedings. 53. 285–288. 9 indexed citations
7.
Chvála, Aleš, et al.. (2020). Neural Network for Electrothermal Circuit Model of SiC Power MOSFET. 13. 88–91.
8.
Chvála, Aleš, et al.. (2019). Performance Analysis of ESD Structures in 130 nm CMOS Technology for Low-Power Applications. 1–6. 2 indexed citations
9.
Chvála, Aleš, Juraj Marek, D. Donoval, et al.. (2018). Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations. IEEE Transactions on Electron Devices. 65(6). 2666–2669. 8 indexed citations
10.
Marek, Juraj, et al.. (2018). Power p-GaN HEMT Under Unclamped Inductive Switching Conditions. 1–5. 8 indexed citations
11.
Chvála, Aleš, Juraj Marek, A. Šatka, et al.. (2018). Methodology and More Accurate Electrothermal Model for Fast Simulation of Power HEMTs. 1–8.
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Marek, Juraj, et al.. (2014). Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations. Solid-State Electronics. 94. 44–50. 24 indexed citations
14.
Marek, Juraj, et al.. (2014). Influence of structure geometry and bulk traps on switching transients of InAlN/GaN HEMT. 29. 1–4. 1 indexed citations
15.
Chvála, Aleš, et al.. (2014). Three-Dimensional Electro-Thermal Verilog-A Model of Power MOSFET for Circuit Simulation. Journal of Physics Conference Series. 494. 12006–12006. 2 indexed citations
16.
Harmatha, L., et al.. (2014). Capacitance properties and simulation of the AlGaN/GaN Schottky heterostructure. Applied Surface Science. 312. 102–106. 4 indexed citations
17.
Donoval, D., J. Kuzmı́k, Juraj Marek, et al.. (2014). Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors. Applied Surface Science. 312. 157–161. 14 indexed citations
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Donoval, Martin, et al.. (2008). On-chip Integration of Magnetic Force Sensing Current Monitors. 1–4. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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