E. J. Thrush

1.8k total citations
69 papers, 1.4k citations indexed

About

E. J. Thrush is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. J. Thrush has authored 69 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Condensed Matter Physics, 43 papers in Electrical and Electronic Engineering and 42 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. J. Thrush's work include GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (41 papers) and Semiconductor materials and devices (22 papers). E. J. Thrush is often cited by papers focused on GaN-based semiconductor devices and materials (43 papers), Semiconductor Quantum Structures and Devices (41 papers) and Semiconductor materials and devices (22 papers). E. J. Thrush collaborates with scholars based in United Kingdom, Belgium and United States. E. J. Thrush's co-authors include C. J. Humphreys, Menno J. Kappers, P. Dawson, Ingrid Moerman, J. S. Barnard, T. M. Smeeton, J. P. Stagg, W. Van der Stricht, D. M. Graham and C.G. Cureton and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

E. J. Thrush

65 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E. J. Thrush United Kingdom 21 989 712 709 478 392 69 1.4k
B. El Jani Tunisia 22 1.1k 1.1× 896 1.3× 952 1.3× 790 1.7× 519 1.3× 147 1.8k
Z. R. Żytkiewicz Poland 19 649 0.7× 460 0.6× 609 0.9× 565 1.2× 338 0.9× 136 1.3k
Stefan Degroote Belgium 25 1.3k 1.4× 693 1.0× 1.3k 1.9× 524 1.1× 771 2.0× 89 2.0k
S. J. Rosner United States 21 1.1k 1.2× 1.2k 1.7× 1.2k 1.7× 658 1.4× 461 1.2× 54 2.2k
I. H. Ho United States 16 975 1.0× 919 1.3× 645 0.9× 546 1.1× 320 0.8× 24 1.5k
A. Barski France 20 692 0.7× 846 1.2× 587 0.8× 936 2.0× 529 1.3× 69 1.7k
T.S. Cheng United Kingdom 25 1.5k 1.6× 952 1.3× 872 1.2× 887 1.9× 642 1.6× 124 2.2k
Branko Šantić Croatia 17 704 0.7× 361 0.5× 625 0.9× 699 1.5× 462 1.2× 46 1.3k
R. A. Stall United States 20 571 0.6× 625 0.9× 614 0.9× 366 0.8× 283 0.7× 66 1.1k
S. R. Lee United States 15 490 0.5× 474 0.7× 558 0.8× 368 0.8× 233 0.6× 35 1.0k

Countries citing papers authored by E. J. Thrush

Since Specialization
Citations

This map shows the geographic impact of E. J. Thrush's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. J. Thrush with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. J. Thrush more than expected).

Fields of papers citing papers by E. J. Thrush

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. J. Thrush. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. J. Thrush. The network helps show where E. J. Thrush may publish in the future.

Co-authorship network of co-authors of E. J. Thrush

This figure shows the co-authorship network connecting the top 25 collaborators of E. J. Thrush. A scholar is included among the top collaborators of E. J. Thrush based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. J. Thrush. E. J. Thrush is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Massabuau, Fabien, Matthew Davies, Fabrice Oehler, et al.. (2014). The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Applied Physics Letters. 105(11). 58 indexed citations
2.
Graham, D. M., P. Dawson, Yuchen Zhang, et al.. (2006). The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2005–2008.
3.
Costa, Pedro M. F. J., Ranjan Datta, Menno J. Kappers, et al.. (2006). Misfit dislocations in In‐rich InGaN/GaN quantum well structures. physica status solidi (a). 203(7). 1729–1732. 47 indexed citations
4.
Thrush, E. J., R.W. Glew, P.D. Greene, et al.. (2002). The growth of 1550 nm integrated laser/modulator structures by MOCVD. 72–75.
5.
Harris, J. J., Shiro Sakai, Z. Bougrioua, et al.. (2001). Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology. 16(5). 402–405. 15 indexed citations
6.
Bougrioua, Z., Ingrid Moerman, Nikhil Sharma, et al.. (2001). Material optimisation for AlGaN/GaN HFET applications. Journal of Crystal Growth. 230(3-4). 573–578. 25 indexed citations
7.
Duxbury, N. S., U. Bangert, P. Dawson, et al.. (2000). Indium segregation in InGaN quantum-well structures. Applied Physics Letters. 76(12). 1600–1602. 98 indexed citations
8.
Harris, J. J., I. Harrison, D. Korakakis, et al.. (1999). Interpretation of the Temperature-Dependent Transport Properties of GaN/Sapphire Films Grown by MBE and MOCVD. physica status solidi (a). 176(1). 363–367. 13 indexed citations
9.
Duxbury, N. S., P. Dawson, U. Bangert, et al.. (1999). Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD. physica status solidi (b). 216(1). 355–359. 7 indexed citations
10.
Duxbury, N. S., et al.. (1999). Microstructure and compositional behaviour of InGaN/GaN multiple quantum well structures.. Ghent University Academic Bibliography (Ghent University). 161. 207–210.
11.
Considine, L., E. J. Thrush, K. Jacobs, et al.. (1998). Growth and in situ monitoring of GaN using IR interference effects. Journal of Crystal Growth. 195(1-4). 192–198. 7 indexed citations
12.
Stricht, W. Van der, Ingrid Moerman, Piet Demeester, et al.. (1995). The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition. MRS Proceedings. 395. 9 indexed citations
13.
Thrush, E. J., J. P. Stagg, M.A. Gibbon, et al.. (1993). Selective and non-planar epitaxy of InP/GaInAs(P) by MOCVD. Materials Science and Engineering B. 21(2-3). 130–146. 33 indexed citations
14.
Mallard, R. E., E. J. Thrush, Robert Martin, et al.. (1993). The control and evaluation of blue shift in GaInAs/GaInAsP multiple quantum well structures for integrated lasers and Stark-effect modulators. Semiconductor Science and Technology. 8(6). 1156–1165. 4 indexed citations
15.
Nicholas, R. J., et al.. (1992). Superlattice dispersion in InGaAs/InGaAsP multi-quantum wells. Semiconductor Science and Technology. 7(4). 493–497. 7 indexed citations
16.
Garrett, B. & E. J. Thrush. (1989). Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates. Journal of Crystal Growth. 97(2). 273–284. 45 indexed citations
17.
Thrush, E. J., et al.. (1984). Compositional transients in MOCVD grown III–V heterostructures. Journal of Crystal Growth. 68(1). 412–421. 30 indexed citations
18.
Whiteaway, J.E.A. & E. J. Thrush. (1981). Performance and characterization of GaAs-(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor deposition. Journal of Applied Physics. 52(3). 1528–1536. 6 indexed citations
19.
Thrush, E. J. & J.E.A. Whiteaway. (1979). Preliminary c.w. reliability measurements on GaAs-(GaAl)As stripe lasers grown by metal-organic c.v.d.. Electronics Letters. 15(20). 666–667. 6 indexed citations
20.
Thrush, E. J.. (1974). A method for selective substrate removal from thin p-type gallium arsenide layers. Journal of Physics E Scientific Instruments. 7(6). 493–495. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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