T. D. Osentowski

967 total citations
20 papers, 700 citations indexed

About

T. D. Osentowski is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, T. D. Osentowski has authored 20 papers receiving a total of 700 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in T. D. Osentowski's work include Semiconductor Lasers and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and devices (8 papers). T. D. Osentowski is often cited by papers focused on Semiconductor Lasers and Optical Devices (15 papers), Semiconductor Quantum Structures and Devices (13 papers) and Semiconductor materials and devices (8 papers). T. D. Osentowski collaborates with scholars based in United States. T. D. Osentowski's co-authors include Chia-Chen Kuo, M. G. Craford, R. M. Fletcher, V. M. Robbins, Jingxi Yu, K. H. Huang, F. A. Kish, N. Holonyak, M. J. Peanasky and D.C. DeFevere and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

T. D. Osentowski

19 papers receiving 646 citations

Peers

T. D. Osentowski

EEE

AMPO

CMP

Yoshihiro Kawarada Japan

Kazuhiko Hosomi Japan

M. Mannoh Japan

P. Roentgen Switzerland

M. Takikawa Japan

M. Wójtowicz United States

Y. Qiu United States

J. P. Salerno United States

L. Leprince France

Koichi Kamon Japan

Yoshihiro Kawarada Japan

T. D. Osentowski

634 ×1.1

EEE

600 ×1.3

AMPO

189 ×0.6

CMP

107 ×1.0

108 ×1.5

Citations per year, relative to T. D. Osentowski T. D. Osentowski (= 1×) peers Yoshihiro Kawarada

Countries citing papers authored by T. D. Osentowski

Since Specialization

Citations

This map shows the geographic impact of T. D. Osentowski's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. D. Osentowski with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. D. Osentowski more than expected).

Fields of papers citing papers by T. D. Osentowski

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. D. Osentowski. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. D. Osentowski. The network helps show where T. D. Osentowski may publish in the future.

Co-authorship network of co-authors of T. D. Osentowski

This figure shows the co-authorship network connecting the top 25 collaborators of T. D. Osentowski. A scholar is included among the top collaborators of T. D. Osentowski based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. D. Osentowski. T. D. Osentowski is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Herrick, Robert W., Laura M. Giovane, M. Keever, et al.. (2003). Reliability and failure mechanisms of oxide VCSELs in non-hermetic enviroments. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 173–173. 15 indexed citations

McHugo, Scott A., A.T. Krishnan, J. Krueger, et al.. (2003). Characterization of failure mechanisms for oxide VCSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 55–55. 7 indexed citations

Giovane, Laura M., et al.. (2003). Reliability of oxide VCSELs in non-hermetic environments. 2. 544–545. 9 indexed citations

Chamberlin, D. R., et al.. (2002). Injection of point defects by oxidation of AlGaAs. MRS Proceedings. 719. 1 indexed citations

Stockman, S. A., James Huang, T. D. Osentowski, et al.. (1999). Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium. Journal of Electronic Materials. 28(7). 916–925. 12 indexed citations

Kish, F. A., Frank M. Steranka, D.C. DeFevere, et al.. (1994). Very high-efficiency semiconductor wafer-bonded transparent-substrate (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes. Applied Physics Letters. 64(21). 2839–2841. 184 indexed citations

Kish, F. A., S. J. Caracci, S. A. Maranowski, et al.. (1992). Planar native-oxide buried-mesa AlxGa1−xAs-In0.5(AlyGa1−y)0.5P- In0.5(AlzGa1−z)0.5P visible-spectrum laser diodes. Journal of Applied Physics. 71(6). 2521–2525. 3 indexed citations

Kish, F. A., N. Holonyak, K. C. Hsieh, et al.. (1992). Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers. Journal of Electronic Materials. 21(12). 1133–1139. 37 indexed citations

Huang, K. H., Jingxi Yu, Chia-Chen Kuo, et al.. (1992). Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555–620 nm spectral region using a thick GaP window layer. Applied Physics Letters. 61(9). 1045–1047. 96 indexed citations

10.

Fletcher, R. M., Chia-Chen Kuo, T. D. Osentowski, et al.. (1991). The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer. Journal of Electronic Materials. 20(12). 1125–1130. 63 indexed citations

11.

Kish, F. A., S. J. Caracci, N. Holonyak, et al.. (1991). Native-oxide stripe-geometry In0.5(AlxGa1−x)0.5P-In0.5Ga0.5P heterostructure laser diodes. Applied Physics Letters. 59(3). 354–356. 14 indexed citations

12.

Kuo, Chia-Chen, et al.. (1990). High performance AlGaInP visible light-emitting diodes. Applied Physics Letters. 57(27). 2937–2939. 151 indexed citations

13.

Dallesasse, John M., N. El-Zein, N. Holonyak, et al.. (1990). Hydrogenation-defined stripe-geometry In0.5(AlxGa1−x)0.5P quantum-well lasers. Journal of Applied Physics. 68(11). 5871–5873. 5 indexed citations

14.

Nam, D. W., N. Holonyak, K. C. Hsieh, et al.. (1989). Photopumped phonon-assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters. 54(24). 2446–2448. 4 indexed citations

15.

Dallesasse, John M., W. E. Plano, D. W. Nam, et al.. (1989). Impurity-induced layer disordering in In0.5(Alx Ga1−x)0.5P-InGaP quantum-well heterostructures: Visible-spectrum-buried heterostructure lasers. Journal of Applied Physics. 66(2). 482–487. 15 indexed citations

16.

Kuo, Chia-Chen, R. M. Fletcher, T. D. Osentowski, et al.. (1988). Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures. Journal of Crystal Growth. 93(1-4). 389–395. 10 indexed citations

17.

Deppe, D.G., D. W. Nam, N. Holonyak, et al.. (1988). Impurity-induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters. 52(17). 1413–1415. 30 indexed citations

18.

Deppe, D.G., W. E. Plano, J. E. Baker, et al.. (1988). Comparison of SiIII-SiV and SiIII-VIII diffusion models in III-V heterostructures lattice matched to GaAs. Applied Physics Letters. 53(22). 2211–2213. 7 indexed citations

19.

Dallesasse, John M., D. W. Nam, D.G. Deppe, et al.. (1988). Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1−x)0.5P quantum well lasers. Applied Physics Letters. 53(19). 1826–1828. 25 indexed citations

20.

Nam, D. W., D.G. Deppe, N. Holonyak, et al.. (1988). Short-wavelength (∼625 nm) room-temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters. 52(16). 1329–1331. 12 indexed citations

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