M. P. Scott

939 total citations
26 papers, 719 citations indexed

About

M. P. Scott is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, M. P. Scott has authored 26 papers receiving a total of 719 indexed citations (citations by other indexed papers that have themselves been cited), including 20 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 7 papers in Biomedical Engineering. Recurrent topics in M. P. Scott's work include Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor materials and interfaces (6 papers). M. P. Scott is often cited by papers focused on Semiconductor materials and devices (11 papers), Silicon and Solar Cell Technologies (9 papers) and Semiconductor materials and interfaces (6 papers). M. P. Scott collaborates with scholars based in United States and China. M. P. Scott's co-authors include J. F. Gibbons, Judy L. Hoyt, C. A. King, S. S. Laderman, C. M. Gronet, D. B. Noble, T. I. Kamins, J. Turner, A. G. Elliot and Jean‐Marie Tarascon and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of The Electrochemical Society.

In The Last Decade

M. P. Scott

26 papers receiving 677 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. P. Scott United States 13 471 336 171 139 85 26 719
W. Dorsch Germany 13 398 0.8× 362 1.1× 208 1.2× 142 1.0× 72 0.8× 30 636
J. L. Farvacque France 15 354 0.8× 325 1.0× 274 1.6× 309 2.2× 160 1.9× 72 683
Y. Androussi France 15 336 0.7× 415 1.2× 186 1.1× 150 1.1× 35 0.4× 28 593
U. Smith Sweden 13 456 1.0× 342 1.0× 139 0.8× 78 0.6× 146 1.7× 50 710
G. Kästner Germany 18 383 0.8× 197 0.6× 250 1.5× 249 1.8× 104 1.2× 44 706
L.J. Chen Taiwan 16 395 0.8× 369 1.1× 180 1.1× 150 1.1× 151 1.8× 89 717
M. Juhel France 14 626 1.3× 522 1.6× 141 0.8× 213 1.5× 56 0.7× 75 790
C. Nobili Italy 16 483 1.0× 309 0.9× 265 1.5× 69 0.5× 80 0.9× 38 737
Akihiro Moritani Japan 13 472 1.0× 245 0.7× 194 1.1× 36 0.3× 56 0.7× 58 623
K. E. Strege United States 11 358 0.8× 343 1.0× 116 0.7× 45 0.3× 40 0.5× 18 508

Countries citing papers authored by M. P. Scott

Since Specialization
Citations

This map shows the geographic impact of M. P. Scott's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. P. Scott with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. P. Scott more than expected).

Fields of papers citing papers by M. P. Scott

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. P. Scott. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. P. Scott. The network helps show where M. P. Scott may publish in the future.

Co-authorship network of co-authors of M. P. Scott

This figure shows the co-authorship network connecting the top 25 collaborators of M. P. Scott. A scholar is included among the top collaborators of M. P. Scott based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. P. Scott. M. P. Scott is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gibbons, J. F., C. A. King, Judy L. Hoyt, et al.. (2003). Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing. 566–569. 1 indexed citations
2.
Kamins, T. I., K. Nauka, J. E. Turner, et al.. (2003). High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors. 647–650. 1 indexed citations
3.
Turner, J. E., A. K. Kapoor, S. J. Rosner, et al.. (1990). A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts. IEEE Electron Device Letters. 11(9). 412–414. 32 indexed citations
4.
Noble, D. B., Judy L. Hoyt, C. A. King, et al.. (1990). Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas. Applied Physics Letters. 56(1). 51–53. 82 indexed citations
5.
Hoyt, Judy L., C. A. King, D. B. Noble, et al.. (1990). Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications. Thin Solid Films. 184(1-2). 93–106. 43 indexed citations
6.
Turner, J. E., A. K. Kapoor, S. J. Rosner, et al.. (1990). STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts. 53–54. 6 indexed citations
7.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Epitaxial Growth of Sil-xGex/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications. MRS Proceedings. 146. 6 indexed citations
8.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing. IEEE Electron Device Letters. 10(4). 159–161. 29 indexed citations
9.
Noble, D. B., Judy L. Hoyt, J. F. Gibbons, et al.. (1989). Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing. Applied Physics Letters. 55(19). 1978–1980. 26 indexed citations
10.
King, C. A., Judy L. Hoyt, C. M. Gronet, et al.. (1989). Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing. IEEE Electron Device Letters. 10(2). 52–54. 127 indexed citations
11.
Scott, M. P., S. S. Laderman, T. I. Kamins, et al.. (1988). Onset of Misfit Dislocation Generation in As-Grown and Annealed Sil-XGex/Si Films. MRS Proceedings. 130. 6 indexed citations
12.
Bourret, Edith, et al.. (1987). Silicon and indium doping of GaAs: Measurements of the effect of doping on mechanical behavior and relation with dislocation formation. Journal of Crystal Growth. 85(1-2). 275–281. 30 indexed citations
13.
Amano, Jun, et al.. (1986). Junction leakage in titanium self-aligned silicide devices. Applied Physics Letters. 49(12). 737–739. 28 indexed citations
14.
Gibbons, J. F., C. M. Gronet, James C. Sturm, et al.. (1986). Limited Reaction Processing. MRS Proceedings. 74. 2 indexed citations
15.
Scott, M. P., S. S. Laderman, & A. G. Elliot. (1985). Microscopic identification of defects propagating through the center of silicon and indium-doped liquid encapsulated Czochralski grown GaAs using x-ray topography. Applied Physics Letters. 47(12). 1280–1282. 13 indexed citations
16.
Marek, Jiří, et al.. (1985). A Novel Scheme for Detection of Defects in III–V Semiconductors by Cathodoluminescence. Journal of The Electrochemical Society. 132(6). 1502–1504. 14 indexed citations
17.
Laderman, S. S., et al.. (1985). Application Of X-Ray Diffraction Techniques To Semiconductor Materials Characterization. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 524. 13–13. 2 indexed citations
18.
Elliot, A. G., et al.. (1984). Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAs. Journal of Crystal Growth. 70(1-2). 169–178. 61 indexed citations
19.
Kino, G. S., D. M. Barnett, G. Herrmann, et al.. (1980). Acoustic measurements of stress fields and microstructure. Journal of Nondestructive Evaluation. 1(1). 67–77. 40 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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