J. E. Turner

1.8k total citations
49 papers, 1.5k citations indexed

About

J. E. Turner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. E. Turner has authored 49 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 17 papers in Materials Chemistry. Recurrent topics in J. E. Turner's work include Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (17 papers) and Silicon and Solar Cell Technologies (14 papers). J. E. Turner is often cited by papers focused on Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (17 papers) and Silicon and Solar Cell Technologies (14 papers). J. E. Turner collaborates with scholars based in United States, Germany and Taiwan. J. E. Turner's co-authors include M. B. Maple, B. C. Sales, Gábor A. Somorjai, J. F. Gibbons, Judy L. Hoyt, T. I. Kamins, R.C. Yeates, Andrew J. Gellman, M. Hendewerk and Brian Sales and has published in prestigious journals such as Physical Review Letters, Advanced Materials and Applied Physics Letters.

In The Last Decade

J. E. Turner

48 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. E. Turner United States 22 654 616 608 365 232 49 1.5k
Xing-Cai Guo United States 19 268 0.4× 931 1.5× 736 1.2× 330 0.9× 36 0.2× 43 1.4k
W. Drachsel Germany 18 124 0.2× 498 0.8× 327 0.5× 147 0.4× 64 0.3× 63 885
D. Coulman Germany 6 191 0.3× 398 0.6× 670 1.1× 98 0.3× 51 0.2× 7 941
Stefan Wehner Germany 20 142 0.2× 617 1.0× 368 0.6× 92 0.3× 105 0.5× 70 1.1k
M. P. Sears United States 14 291 0.4× 694 1.1× 324 0.5× 87 0.2× 17 0.1× 25 1.0k
J. W. Evans United States 23 143 0.2× 937 1.5× 578 1.0× 461 1.3× 19 0.1× 43 1.8k
Petri Salo Finland 17 170 0.3× 439 0.7× 465 0.8× 80 0.2× 13 0.1× 50 844
P. S. Pershan United States 8 92 0.1× 283 0.5× 387 0.6× 43 0.1× 54 0.2× 9 889
V.K. Medvedev Germany 13 115 0.2× 275 0.4× 295 0.5× 50 0.1× 31 0.1× 35 579
L. Surnev Bulgaria 23 564 0.9× 643 1.0× 703 1.2× 165 0.5× 8 0.0× 40 1.2k

Countries citing papers authored by J. E. Turner

Since Specialization
Citations

This map shows the geographic impact of J. E. Turner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. E. Turner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. E. Turner more than expected).

Fields of papers citing papers by J. E. Turner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. E. Turner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. E. Turner. The network helps show where J. E. Turner may publish in the future.

Co-authorship network of co-authors of J. E. Turner

This figure shows the co-authorship network connecting the top 25 collaborators of J. E. Turner. A scholar is included among the top collaborators of J. E. Turner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. E. Turner. J. E. Turner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kamins, T. I., K. Nauka, J. E. Turner, et al.. (2003). High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors. 647–650. 1 indexed citations
2.
3.
Hoyt, Judy L., et al.. (1995). Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers. Applied Physics Letters. 67(5). 706–708. 23 indexed citations
4.
Tanner, M. O., K.L. Wang, T. I. Kamins, et al.. (1994). Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers. IEEE Transactions on Electron Devices. 41(7). 1273–1281. 34 indexed citations
5.
Neiman, David, et al.. (1994). Modification of the PHI sample mount for multiple- or micropositioning for Zalar rotation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 12(1). 265–266. 2 indexed citations
6.
Kamins, T. I., D. Vook, Paul K. L. Yu, & J. E. Turner. (1992). Kinetics of selective epitaxial deposition of Si1−xGex. Applied Physics Letters. 61(6). 669–671. 33 indexed citations
7.
Turner, J. E., A. K. Kapoor, S. J. Rosner, et al.. (1990). A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts. IEEE Electron Device Letters. 11(9). 412–414. 32 indexed citations
8.
Carey, K. W., et al.. (1990). Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPE. Journal of Electronic Materials. 19(4). 345–348. 35 indexed citations
9.
Rosner, S. J., et al.. (1989). High-pressure oxidation of titanium disilicide/polycrystalline silicon composite films. Journal of Applied Physics. 65(4). 1729–1732. 2 indexed citations
10.
Turner, J. E., Jun Amano, C. M. Gronet, & J. F. Gibbons. (1987). Secondary ion mass spectrometry of hyper-abrupt doping transitions fabricated by limited reaction processing. Applied Physics Letters. 50(22). 1601–1603. 10 indexed citations
11.
Carey, K. W., Shih-Yuan Wang, R. Hull, et al.. (1986). Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes. Journal of Crystal Growth. 77(1-3). 558–563. 9 indexed citations
12.
Kamins, T. I., S. S. Laderman, D. Coulman, & J. E. Turner. (1986). Interaction Between CVD Tungsten Films and Silicon during Annealing. Journal of The Electrochemical Society. 133(7). 1438–1442. 10 indexed citations
13.
Amano, Jun, et al.. (1986). Junction leakage in titanium self-aligned silicide devices. Applied Physics Letters. 49(12). 737–739. 28 indexed citations
14.
Sieber, K., C. Sánchez, J. E. Turner, & Gábor A. Somorjai. (1985). Preparation, electrical and photoelectrochemical properties of magnesium doped iron oxide sintered discs. Materials Research Bulletin. 20(2). 153–162. 7 indexed citations
15.
Cass, T. R., et al.. (1985). The impact of TiSi2 on shallow junctions. 411–414. 5 indexed citations
16.
Turner, J. E. & M. B. Maple. (1984). Oxide formation and reduction over Pt, Pd, and Ir; A driving mechanism for oscillations in the co oxidation reaction. Surface Science. 147(2-3). 647–662. 51 indexed citations
17.
Turner, J. E., M. Hendewerk, & Gábor A. Somorjai. (1984). The photodissociation of water by doped iron oxides: The unblased p/n assembly. Chemical Physics Letters. 105(6). 581–585. 24 indexed citations
18.
Somorjai, Gabor A. & J. E. Turner. (1984). Catalyzed photodissociation of water ? The first step in inorganic photosynthesis?. Die Naturwissenschaften. 71(11). 575–577. 1 indexed citations
19.
Turner, J. E., B. C. Sales, & M. B. Maple. (1981). Oscillatory oxidation of Co over a Pt catalyst. Surface Science. 103(1). 54–74. 138 indexed citations
20.
Sales, B. C., J. E. Turner, & M. B. Maple. (1980). Sublimation Rate of Cobalt near Its Curie Temperature. Physical Review Letters. 44(9). 586–590. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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