H.-S. Fu

1.1k total citations · 1 hit paper
20 papers, 616 citations indexed

About

H.-S. Fu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Infectious Diseases. According to data from OpenAlex, H.-S. Fu has authored 20 papers receiving a total of 616 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Infectious Diseases. Recurrent topics in H.-S. Fu's work include Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H.-S. Fu is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor materials and devices (12 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). H.-S. Fu collaborates with scholars based in United States, China and United Kingdom. H.-S. Fu's co-authors include C. T. Sah, John W. Walker, A.F. Tasch, T.C. Holloway, P.K. Chatterjee, Kit Man Cham, Paul Vande Voorde, H. Juliette T. Unwin, Timothy B. Hallett and Zulma M. Cucunubá and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

H.-S. Fu

20 papers receiving 587 citations

Hit Papers

Estimating the effects of non-pharmaceutical intervention... 2020 2026 2022 2024 2020 100 200 300

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H.-S. Fu United States 8 301 210 114 111 106 20 616
Keith Gunaratne Canada 7 90 0.3× 126 0.6× 115 1.0× 83 0.7× 291 2.7× 11 1.1k
Weifeng Lü China 11 183 0.6× 322 1.5× 197 1.7× 9 0.1× 95 0.9× 39 683
Valentyn Stadnytskyi United States 10 51 0.2× 247 1.2× 47 0.4× 68 0.6× 204 1.9× 15 1000
Seyed Mohammad Hashemi Iran 15 293 1.0× 55 0.3× 56 0.5× 162 1.5× 19 0.2× 48 690
Bismark Singh United States 10 70 0.2× 98 0.5× 35 0.3× 18 0.2× 36 0.3× 31 264
Cameron Zachreson Australia 10 78 0.3× 79 0.4× 19 0.2× 62 0.6× 53 0.5× 25 425
Lanqin Liu China 7 61 0.2× 23 0.1× 11 0.1× 75 0.7× 217 2.0× 38 496
Yingjun Han China 5 32 0.1× 143 0.7× 45 0.4× 10 0.1× 307 2.9× 9 514
Élysée Nouvet Canada 17 29 0.1× 24 0.1× 61 0.5× 50 0.5× 63 0.6× 70 748
David B. Stein United States 14 34 0.1× 26 0.1× 31 0.3× 41 0.4× 30 0.3× 32 665

Countries citing papers authored by H.-S. Fu

Since Specialization
Citations

This map shows the geographic impact of H.-S. Fu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H.-S. Fu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H.-S. Fu more than expected).

Fields of papers citing papers by H.-S. Fu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H.-S. Fu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H.-S. Fu. The network helps show where H.-S. Fu may publish in the future.

Co-authorship network of co-authors of H.-S. Fu

This figure shows the co-authorship network connecting the top 25 collaborators of H.-S. Fu. A scholar is included among the top collaborators of H.-S. Fu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H.-S. Fu. H.-S. Fu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fu, H.-S., et al.. (2024). Segmentation of tunnel water leakage based on a lightweight DeepLabV3+ model. Measurement Science and Technology. 36(1). 15414–15414. 3 indexed citations
2.
Lin, Nan, H.-S. Fu, Dan Pu, et al.. (2021). Criteria for judging the immune markers of COVID‐19 disease vaccines. SHILAP Revista de lepidopterología. 3(1). 1–12. 1 indexed citations
3.
Flaxman, Seth, Swapnil Mishra, Axel Gandy, et al.. (2020). Estimating the effects of non-pharmaceutical interventions on COVID-19 in Europe. Spiral (Imperial College London). 307 indexed citations breakdown →
4.
Fu, H.-S., et al.. (1998). 1/f Noise Characterization of a Surface-Micromachined Suspended Gate FET. TechConnect Briefs. 186–189. 1 indexed citations
5.
Turner, J. E., A. K. Kapoor, S. J. Rosner, et al.. (1990). A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts. IEEE Electron Device Letters. 11(9). 412–414. 32 indexed citations
6.
Turner, J. E., A. K. Kapoor, S. J. Rosner, et al.. (1990). STRIPE-a high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts. 53–54. 6 indexed citations
7.
8.
Cham, Kit Man, et al.. (1985). A High Performance CMOS Process with Half-Micron Gate and Novel Low-Parasitic Salicide Interconnect Scheme. Symposium on VLSI Technology. 1985. 12–13. 3 indexed citations
10.
Fu, H.-S., et al.. (1980). A new MOS transistor design with self-registering source-drain and gate contacts. 140–143. 1 indexed citations
11.
Taylor, G.W., P.K. Chatterjee, H.-S. Fu, & A.F. Tasch. (1978). A punch-through isolated dynamic RAM cell. 352–355. 3 indexed citations
12.
Tasch, A.F., P.K. Chatterjee, H.-S. Fu, & T.C. Holloway. (1978). The Hi-C RAM cell concept. IEEE Transactions on Electron Devices. 25(1). 33–41. 33 indexed citations
13.
Fu, H.-S., et al.. (1977). IVa-4 low frequency noise characteristics of ion implanted "Buried channel" NMOS devices. IEEE Transactions on Electron Devices. 24(9). 1207–1207. 5 indexed citations
14.
Tasch, A.F., P.K. Chatterjee, H.-S. Fu, & T.C. Holloway. (1977). The Hi-C RAM cell concept. 287–290. 2 indexed citations
15.
Tasch, A.F., H.-S. Fu, & R.C. Frye. (1975). The charge-coupled RAM cell—A new MOS dynamic RAM cell simpler than the one-transistor cell. 21. 7–8. 2 indexed citations
16.
Sah, C. T., et al.. (1972). Thermally Stimulated Capacitance (TSCAP) in p-n Junctions. Applied Physics Letters. 20(5). 193–195. 82 indexed citations
17.
Sah, C. T. & H.-S. Fu. (1972). Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer. physica status solidi (a). 14(1). 59–70. 38 indexed citations
18.
19.
Fu, H.-S. & C. T. Sah. (1971). A distributed gate bistable MOS transistor. Solid-State Electronics. 14(9). 799–IN4. 7 indexed citations
20.
Fu, H.-S. & C. T. Sah. (1969). Lumped model analysis of the low frequency generation noise in gold-doped silicon junction-gate field-effect transistors. Solid-State Electronics. 12(8). 605–618. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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