T.S. Cheng

2.7k total citations
124 papers, 2.2k citations indexed

About

T.S. Cheng is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electrical and Electronic Engineering. According to data from OpenAlex, T.S. Cheng has authored 124 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Condensed Matter Physics, 83 papers in Atomic and Molecular Physics, and Optics and 62 papers in Electrical and Electronic Engineering. Recurrent topics in T.S. Cheng's work include GaN-based semiconductor devices and materials (80 papers), Semiconductor Quantum Structures and Devices (73 papers) and Semiconductor materials and devices (41 papers). T.S. Cheng is often cited by papers focused on GaN-based semiconductor devices and materials (80 papers), Semiconductor Quantum Structures and Devices (73 papers) and Semiconductor materials and devices (41 papers). T.S. Cheng collaborates with scholars based in United Kingdom, Russia and France. T.S. Cheng's co-authors include C. T. Foxon, С. В. Новиков, John Orton, C. T. Foxon, D. E. Lacklison, S. E. Hooper, L. C. Jenkins, S. Porowski, I. Grzegory and Christopher J. Mellor and has published in prestigious journals such as Physical Review Letters, Nature Communications and Physical review. B, Condensed matter.

In The Last Decade

T.S. Cheng

122 papers receiving 2.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T.S. Cheng United Kingdom 25 1.5k 952 887 872 642 124 2.2k
V. V. Emtsev Russia 13 1.7k 1.1× 930 1.0× 896 1.0× 661 0.8× 998 1.6× 55 2.2k
N. N. Faleev United States 21 1.0k 0.7× 1.0k 1.1× 719 0.8× 1.1k 1.2× 373 0.6× 121 1.9k
Hisashi Seki Japan 23 1.4k 0.9× 1.0k 1.1× 794 0.9× 934 1.1× 713 1.1× 117 2.1k
W. V. Lundin Russia 21 1.4k 0.9× 709 0.7× 659 0.7× 735 0.8× 649 1.0× 215 1.8k
Hiroaki Ohta Japan 24 1.5k 1.0× 833 0.9× 552 0.6× 674 0.8× 483 0.8× 47 1.7k
J. J. Song United States 20 1.5k 1.0× 1.0k 1.1× 795 0.9× 569 0.7× 693 1.1× 60 1.9k
V. Härle Germany 25 1.5k 1.0× 1.4k 1.4× 554 0.6× 1.2k 1.4× 525 0.8× 123 2.2k
F. Natali France 26 1.3k 0.9× 660 0.7× 666 0.8× 647 0.7× 544 0.8× 94 1.8k
S. J. Rosner United States 21 1.1k 0.7× 1.2k 1.2× 658 0.7× 1.2k 1.4× 461 0.7× 54 2.2k
U. Zeimer Germany 26 1.2k 0.8× 923 1.0× 626 0.7× 1.3k 1.5× 674 1.0× 155 2.2k

Countries citing papers authored by T.S. Cheng

Since Specialization
Citations

This map shows the geographic impact of T.S. Cheng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T.S. Cheng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T.S. Cheng more than expected).

Fields of papers citing papers by T.S. Cheng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T.S. Cheng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T.S. Cheng. The network helps show where T.S. Cheng may publish in the future.

Co-authorship network of co-authors of T.S. Cheng

This figure shows the co-authorship network connecting the top 25 collaborators of T.S. Cheng. A scholar is included among the top collaborators of T.S. Cheng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T.S. Cheng. T.S. Cheng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Valvin, Pierre, T.S. Cheng, Jonathan Bradford, et al.. (2024). Spatially-resolved UV-C emission in epitaxial monolayer boron nitride. 2D Materials. 11(2). 25026–25026. 1 indexed citations
2.
3.
Elias, Christine, Pierre Valvin, Thomas Pelini, et al.. (2019). Direct band-gap crossover in epitaxial monolayer boron nitride. Nature Communications. 10(1). 2639–2639. 194 indexed citations
4.
Summerfield, Alex, T.S. Cheng, Andrew J. Davies, et al.. (2017). An atomic carbon source for high temperature molecular beam epitaxy of graphene. Scientific Reports. 7(1). 6598–6598. 14 indexed citations
5.
Foxon, C. T., et al.. (2000). Arsenic-doped GaN grown by molecular beam epitaxy. Journal of Crystal Growth. 219(4). 327–334. 24 indexed citations
6.
Bell, A., I. Harrison, T.S. Cheng, et al.. (2000). An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy. Semiconductor Science and Technology. 15(8). 789–793. 10 indexed citations
7.
Cheng, T.S., С. В. Новиков, R. P. Campion, et al.. (1999). The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates. Journal of Crystal Growth. 197(1-2). 12–18. 8 indexed citations
8.
Shokhovets, S., R. Goldhahn, G. Gobsch, T.S. Cheng, & C. T. Foxon. (1999). Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs. Materials Science and Engineering B. 59(1-3). 69–72. 2 indexed citations
9.
Mellor, Christopher J., U. Zeitler, Andrew Devitt, et al.. (1998). Angle-resolved ballistic phonon absorption spectroscopy in the lowest Landau level. Physica B Condensed Matter. 256-258. 36–42. 1 indexed citations
10.
Foxon, C. T., T.S. Cheng, John Orton, et al.. (1998). Studies of p-GaN grown by MBE on GaAs(1 1 1)B. Journal of Crystal Growth. 189-190. 516–518. 4 indexed citations
11.
Hao, M., Shiro Sakai, T. Sugahara, T.S. Cheng, & C. T. Foxon. (1998). Transmission electron microscopy investigation of InNAs on GaAs grown by molecular beam epitaxy. Journal of Crystal Growth. 189-190. 481–484. 6 indexed citations
12.
Harrison, I., et al.. (1997). Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE. Materials Science and Engineering B. 50(1-3). 307–310. 12 indexed citations
13.
Xin, Yan, Paul D. Brown, Rafal E. Dunin–Borkowski, et al.. (1997). Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy. Journal of Crystal Growth. 171(3-4). 321–332. 25 indexed citations
14.
Ren, Bing, et al.. (1996). Evidence for Shallow Acceptor Levels in MBE Grown GaN. MRS Internet Journal of Nitride Semiconductor Research. 1. 16 indexed citations
15.
Cheng, T.S., C. T. Foxon, L. C. Jenkins, et al.. (1996). Mechanisms of nitrogen incorporation in (AlGa)(AsN) films grown by molecular beam epitaxy. Journal of Crystal Growth. 158(4). 399–402. 6 indexed citations
16.
Foxon, C. T., T.S. Cheng, С. В. Новиков, et al.. (1995). The growth and properties of group III nitrides. Journal of Crystal Growth. 150. 892–896. 60 indexed citations
17.
Orton, John, D. E. Lacklison, C. T. Foxon, et al.. (1995). The growth and properties of mixed group V nitrides. Journal of Electronic Materials. 24(4). 263–268. 26 indexed citations
18.
Новиков, С. В., C. T. Foxon, T.S. Cheng, et al.. (1995). Auger investigation of group III nitride films grown by molecular beam epitaxy. Journal of Crystal Growth. 146(1-4). 340–343. 13 indexed citations
19.
Crump, P., et al.. (1994). The effect of current, illumination and contact nature on equilibration between bulk and edge current-carrying states. Semiconductor Science and Technology. 9(8). 1455–1464. 6 indexed citations
20.
Moskalenko, E. S., А. В. Акимов, A. A. Kaplyanskiǐ, et al.. (1994). Non-equilibrium phonon heating of the two-dimensional exciton gas in GaAs/AlGaAs quantum wells. Physics of the Solid State. 36(10). 1668–1672. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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