M. Keever

670 total citations
25 papers, 476 citations indexed

About

M. Keever is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Keever has authored 25 papers receiving a total of 476 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 2 papers in Condensed Matter Physics. Recurrent topics in M. Keever's work include Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (13 papers) and Semiconductor Lasers and Optical Devices (11 papers). M. Keever is often cited by papers focused on Semiconductor Quantum Structures and Devices (14 papers), Semiconductor materials and devices (13 papers) and Semiconductor Lasers and Optical Devices (11 papers). M. Keever collaborates with scholars based in United States. M. Keever's co-authors include H. Morkoç̌, K. Hess, T. J. Drummond, W. Kopp, B. G. Streetman, J. S. Harris, M. J. Ludowise, Paul D. Coleman, H. Shichijo and S. Banerjee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

M. Keever

25 papers receiving 436 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. Keever United States 13 414 370 50 26 19 25 476
Yoshinobu Sugiyama Japan 11 290 0.7× 243 0.7× 38 0.8× 29 1.1× 42 2.2× 41 330
B. Rose France 11 296 0.7× 238 0.6× 60 1.2× 21 0.8× 20 1.1× 28 344
O. Sjölund United States 10 284 0.7× 175 0.5× 25 0.5× 12 0.5× 24 1.3× 32 351
V. Eu United States 11 304 0.7× 219 0.6× 25 0.5× 48 1.8× 17 0.9× 24 331
C. Dubon‐Chevallier France 11 274 0.7× 235 0.6× 26 0.5× 45 1.7× 12 0.6× 35 310
T. Kawano Japan 11 363 0.9× 262 0.7× 26 0.5× 16 0.6× 11 0.6× 21 381
P. J. Corvini United States 12 391 0.9× 201 0.5× 68 1.4× 11 0.4× 10 0.5× 33 423
A. Stano Italy 11 261 0.6× 209 0.6× 30 0.6× 10 0.4× 26 1.4× 40 301
Yoshiyasu Ueno Japan 13 504 1.2× 322 0.9× 43 0.9× 27 1.0× 27 1.4× 40 556
T. Uji Japan 11 309 0.7× 224 0.6× 32 0.6× 22 0.8× 17 0.9× 36 326

Countries citing papers authored by M. Keever

Since Specialization
Citations

This map shows the geographic impact of M. Keever's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Keever with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Keever more than expected).

Fields of papers citing papers by M. Keever

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Keever. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Keever. The network helps show where M. Keever may publish in the future.

Co-authorship network of co-authors of M. Keever

This figure shows the co-authorship network connecting the top 25 collaborators of M. Keever. A scholar is included among the top collaborators of M. Keever based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Keever. M. Keever is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fanning, Thomas R., Jingyi Wang, M. Keever, et al.. (2014). 28-Gbps 850-nm oxide VCSEL development and manufacturing progress at Avago. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9001. 900102–900102. 7 indexed citations
2.
Wang, Jingyi, M. Keever, Thomas R. Fanning, et al.. (2013). 28 Gb/s 850 nm oxide VCSEL development at Avago. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 8639. 86390K–86390K. 5 indexed citations
3.
Keever, M., et al.. (2004). High-Frequency Modulation Characteristics of 1.3->tex<$muhboxm$>/tex<InGaAs Quantum Dot Lasers. IEEE Photonics Technology Letters. 16(2). 377–379. 69 indexed citations
4.
McHugo, Scott A., A.T. Krishnan, J. Krueger, et al.. (2003). Characterization of failure mechanisms for oxide VCSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 55–55. 7 indexed citations
5.
Herrick, Robert W., Laura M. Giovane, M. Keever, et al.. (2003). Reliability and failure mechanisms of oxide VCSELs in non-hermetic enviroments. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 173–173. 15 indexed citations
6.
Giovane, Laura M., et al.. (2003). Reliability of oxide VCSELs in non-hermetic environments. 2. 544–545. 9 indexed citations
7.
Krueger, J., et al.. (2003). Studies of ESD-related failure patterns of Agilent oxide VCSELs. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4994. 162–162. 14 indexed citations
8.
Herrick, Robert W., Hongyu Deng, M. Keever, et al.. (2000). <title>Highly reliable oxide VCSELs manufactured at HP/Agilent Technologies</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3946. 14–19. 4 indexed citations
9.
Herrick, Robert W., et al.. (1999). Reliability of vertical-cavity lasers at Hewlett-Packard. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3627. 48–48. 3 indexed citations
10.
Lei, Chun, et al.. (1997). <title>High-performance vertical-cavity surface-emitting lasers for product applications</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3003. 28–33. 4 indexed citations
11.
Richard, T. A., N. Holonyak, F. A. Kish, M. Keever, & Chun Lei. (1995). Postfabrication native-oxide improvement of the reliability of visible-spectrum AlGaAs–In(AlGa)P p-n heterostructure diodes. Applied Physics Letters. 66(22). 2972–2974. 9 indexed citations
12.
Saxena, Raghvendra Sahai, et al.. (1986). OMVPE growth of InGaAsP materials for long wavelength detectors and emitters. Journal of Crystal Growth. 77(1-3). 591–597. 29 indexed citations
13.
Drummond, T. J., W. Kopp, H. Morkoç̌, & M. Keever. (1982). Transport in modulation-doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs). Applied Physics Letters. 41(3). 277–279. 38 indexed citations
14.
Keever, M., W. Kopp, T. J. Drummond, H. Morkoç̌, & K. Hess. (1982). Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths. Japanese Journal of Applied Physics. 21(10R). 1489–1489. 25 indexed citations
15.
Keever, M., K. Hess, & M. J. Ludowise. (1982). Fast switching and storage in GaAs—AlxGa1-xAs heterojunction layers. IEEE Electron Device Letters. 3(10). 297–300. 21 indexed citations
16.
Keever, M.. (1982). Experimental Studies of Lateral Electron Transport in Gallium Arsenide-Aluminum Gallium Arsenide Heterostructures. Defense Technical Information Center (DTIC). 1 indexed citations
17.
Drummond, T. J., et al.. (1982). Electron mobility in single and multiple period modulation-doped (Al,Ga)As/GaAs heterostructures. Journal of Applied Physics. 53(2). 1023–1027. 41 indexed citations
18.
Coleman, Paul D., et al.. (1982). Demonstration of a new oscillator based on real-space transfer in heterojunctions. Applied Physics Letters. 40(6). 493–495. 46 indexed citations
19.
Drummond, T. J., M. Keever, W. Kopp, et al.. (1981). Field dependence of mobility in Al 0.2 Ga 0.8 As/GaAs heterojunctions at very low fields. Electronics Letters. 17(15). 545–547. 34 indexed citations
20.
Keever, M., H. Shichijo, K. Hess, et al.. (1981). Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1−xAs heterojunction layers. Applied Physics Letters. 38(1). 36–38. 50 indexed citations

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