V. M. Robbins

1.6k citations

30 papers · 1.2k indexed · h-index 16

Impact in

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces

Papers in

Instrumentation 2
Atomic and Molecular Physics, and Optics 17
- Semiconductor Quantum Structures and Devices 15
- Semiconductor materials and interfaces 2

Co-authors: G. E. Stillman G. E. Bulman M. G. Craford R. M. Fletcher Chia-Chen Kuo T. D. Osentowski N. Tabatabaie K. Hess
Journals: Applied Physics Letters (5 papers)Journal of Applied Physics (4 papers)IEEE Transactions on Electron Devices (4 papers)IEEE Electron Device Letters (2 papers)Journal of Electronic Materials (2 papers)
Partner nations: United States

In The Last Decade

V. M. Robbins

30 papers receiving 1.1k citations

Peers

Countries citing papers authored by V. M. Robbins

Since Specialization

Citations

This map shows the geographic impact of V. M. Robbins's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. M. Robbins with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. M. Robbins more than expected).

Fields of papers citing papers by V. M. Robbins

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. M. Robbins. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. M. Robbins. The network helps show where V. M. Robbins may publish in the future.

Co-authors

The 25 scholars most cited alongside V. M. Robbins, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. M. Robbins Line = papers co-authored together V. M. Robbins links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	VLS growth of Si nanowires with in-situ doping for MOS transistors V. M. Robbins, David Taylor, Fauzi Fauzi, A. Fischer-Colbrie, Mario Haldemann, Maria V. Lizak, D. P. Stumbo	2009	1
2	High-power single-mode 1330- and 1550-nm VCSELs bonded to silicon substrates Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·V. M. Robbins, Umi Amalia, D. P. Bour, J. N. Miller, C P Gorbunov	2004	1
3	Reducing Brownian Motion in an Electrostatically Tunable MEMS Laser Journal of Microelectromechanical Systems ·Dorit Huber, 王修建, Umi Amalia, V. M. Robbins, Zong Gangjun	2004	16
4	Semi-analytical analysis for optimization of 0.1-μm InGaAs-channel MODFETs with emphasis on on-state breakdown and reliability Hans Rohdin, Chung‐Yi Su, N. Moll, Lydia Kimaryo, Vasco Ribeiro, V. M. Robbins, Mike Kauffman	2002	10
5	Low-noise, high-speed Ga/sub 0.47/In/sub 0.53/As/Al/sub 0.48/In/sub 0.52/As 0.1-μm MODFETs and high-gain/bandwidth three-stage amplifier fabricated on GaAs substrate Hans Rohdin, Vasco Ribeiro, V. M. Robbins, Chung‐Yi Su, C. Madden, Lydia Kimaryo, Robert Messou Gniamien, John R. Jolly	2002	5
6	Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs Lydia Kimaryo, Hans Rohdin, Chung‐Yi Su, N. Moll, Vasco Ribeiro, V. M. Robbins	2002	14
7	A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability Solid-State Electronics ·Hans Rohdin, Lydia Kimaryo, Vasco Ribeiro, V. M. Robbins, N. Moll, Chung‐Yi Su	1999	3
8	Compositional dependence of the luminescence ofIn0.49(AlyGa1−y)0.51P alloys near the direct–indirect band-gap crossover Physical review. B, Condensed matter ·J. Stuart Nelson, E. D. Jones, S. M. Myers, D.M. Follstaedt, Harold P. Hjalmarson, J. E. Schirber, Richard Schneider, J.E. Fouquet, V. M. Robbins, K. W. Carey	1996	14
9	Novel high-yield trilayer resist process for 0.1 μm T-gate fabrication Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Lydia Kimaryo, Chung‐Yi Su, Hans Rohdin, Stefano Gestri, Mohd Haffazah Sulaiman, John R. Jolly, V. M. Robbins	1995	43
10	The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer Journal of Electronic Materials ·R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski, K. H. Huang, M. G. Craford, V. M. Robbins	1991	63
11	Unusual properties of photoluminescence from partially ordered Ga0.5In0.5P Applied Physics Letters ·J.E. Fouquet, V. M. Robbins, S. J. Rosner, O. Blum	1990	64
12	High performance AlGaInP visible light-emitting diodes Applied Physics Letters ·Chia-Chen Kuo, R. M. Fletcher, T. D. Osentowski, Yubitza Zarate, M. G. Craford, V. M. Robbins	1990	151
13	Impurity diffusion and layer interdiffusion in AlxGa1−xAs-GaAs heterostructures Journal of Applied Physics ·D.G. Deppe, N. Holonyak, W. E. Plano, V. M. Robbins, John M. Dallesasse, K. C. Hsieh, J. E. Baker	1988	58
14	Impact ionization in AlxGa1−xAs for x=0.1–0.4 Applied Physics Letters ·V. M. Robbins, Susan M. Smith, G. E. Stillman	1988	50
15	The determination of impact ionization coefficients in IEEE Transactions on Electron Devices ·G. E. Bulman, V. M. Robbins, G. E. Stillman	1985	44
16	Electron and hole impact ionization coefficients in (100) and in (111) Si Journal of Applied Physics ·V. M. Robbins, David C. Markel, Kevin F. Brennan, K. Hess, G. E. Stillman	1985	36
17	Impact ionization coefficients in (111) InP Applied Physics Letters ·N. Tabatabaie, V. M. Robbins, N. Pan, G. E. Stillman	1985	12
18	Impact ionization in InP and GaAs Physica B+C ·G. E. Stillman, V. M. Robbins, K. Hess	1985	9
19	Experimental determination of impact ionization coefficients in IEEE Electron Device Letters ·G. E. Bulman, V. M. Robbins, Kevin F. Brennan, K. Hess, G. E. Stillman	1983	109
20	InGaAsP photodiodes IEEE Transactions on Electron Devices ·G. E. Stillman, L. W. Cook, N. Tabatabaie, G. E. Bulman, V. M. Robbins	1983	16

About V. M. Robbins

V. M. Robbins is a scholar working on Instrumentation, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Condensed Matter Physics and Surfaces, Coatings and Films, having authored 30 papers that have together received 1.2k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (15 papers), Semiconductor materials and devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers), Semiconductor Lasers and Optical Devices (7 papers), Photonic and Optical Devices (4 papers), GaN-based semiconductor devices and materials (4 papers), Advanced Semiconductor Detectors and Materials (3 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Condensed Matter Physics (324 citations), Atomic and Molecular Physics, and Optics (764 citations), Instrumentation (77 citations), Electrical and Electronic Engineering (1.0k citations) and Surfaces, Coatings and Films (30 citations). V. M. Robbins has collaborated with scholars based in United States. Frequent co-authors include G. E. Stillman, G. E. Bulman, M. G. Craford, R. M. Fletcher, Chia-Chen Kuo, T. D. Osentowski, N. Tabatabaie, K. Hess, Kevin F. Brennan and G. E. Stillman. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Journal of Electronic Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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