D. B. Noble

476 total citations
20 papers, 336 citations indexed

About

D. B. Noble is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. B. Noble has authored 20 papers receiving a total of 336 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in D. B. Noble's work include Semiconductor materials and devices (12 papers), Silicon and Solar Cell Technologies (10 papers) and Semiconductor materials and interfaces (9 papers). D. B. Noble is often cited by papers focused on Semiconductor materials and devices (12 papers), Silicon and Solar Cell Technologies (10 papers) and Semiconductor materials and interfaces (9 papers). D. B. Noble collaborates with scholars based in United States and Australia. D. B. Noble's co-authors include J. F. Gibbons, Judy L. Hoyt, T. I. Kamins, C. A. King, M. P. Scott, C. M. Gronet, S. S. Laderman, William D. Nix, K. Nauka and S. J. Rosner and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and IEEE Electron Device Letters.

In The Last Decade

D. B. Noble

20 papers receiving 324 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. B. Noble United States 8 300 197 81 37 32 20 336
Taroh Inada Japan 12 294 1.0× 159 0.8× 69 0.9× 32 0.9× 28 0.9× 36 331
A. Buczkowski United States 12 334 1.1× 155 0.8× 91 1.1× 40 1.1× 27 0.8× 42 375
Nobuo Toyokura Japan 9 289 1.0× 109 0.6× 71 0.9× 24 0.6× 16 0.5× 17 330
J.R. Pfiester United States 13 661 2.2× 166 0.8× 128 1.6× 49 1.3× 22 0.7× 49 673
Shinsuke Sadamitsu Japan 13 348 1.2× 122 0.6× 138 1.7× 54 1.5× 13 0.4× 20 376
S. Shanfield United States 9 189 0.6× 81 0.4× 79 1.0× 23 0.6× 62 1.9× 18 265
R. Beneyton France 9 224 0.7× 94 0.5× 53 0.7× 58 1.6× 34 1.1× 34 274
Naoki Mitsugi Japan 9 303 1.0× 228 1.2× 29 0.4× 33 0.9× 17 0.5× 27 361
W. van Gelder United States 6 235 0.8× 97 0.5× 74 0.9× 54 1.5× 17 0.5× 8 280
R.Th. Kersten Germany 10 246 0.8× 102 0.5× 66 0.8× 28 0.8× 15 0.5× 31 311

Countries citing papers authored by D. B. Noble

Since Specialization
Citations

This map shows the geographic impact of D. B. Noble's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. B. Noble with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. B. Noble more than expected).

Fields of papers citing papers by D. B. Noble

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. B. Noble. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. B. Noble. The network helps show where D. B. Noble may publish in the future.

Co-authorship network of co-authors of D. B. Noble

This figure shows the co-authorship network connecting the top 25 collaborators of D. B. Noble. A scholar is included among the top collaborators of D. B. Noble based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. B. Noble. D. B. Noble is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gibbons, J. F., C. A. King, Judy L. Hoyt, et al.. (2003). Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing. 566–569. 1 indexed citations
2.
Kamins, T. I., K. Nauka, J. E. Turner, et al.. (2003). High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors. 647–650. 1 indexed citations
3.
Alshareef, Husam N., et al.. (2000). Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide. MRS Proceedings. 611. 1 indexed citations
4.
Noble, D. B., et al.. (1993). Stress Dependence of the Velocity of Threading Dislocation Segments in Si - Ge Heteroepggaxial Films.. MRS Proceedings. 308. 1 indexed citations
5.
Kamins, T. I., et al.. (1992). Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers. IEEE Electron Device Letters. 13(4). 177–179. 7 indexed citations
6.
Kamins, T. I., K. Nauka, R. D. Jacowitz, et al.. (1992). Electrical characteristics of diodes fabricated in selective Si/Si1−x Ge x epitaxial layers. Journal of Electronic Materials. 21(8). 817–824. 7 indexed citations
7.
8.
Ghani, T., Judy L. Hoyt, D. B. Noble, et al.. (1991). Effect of oxygen on minority-carrier lifetime and recombination currents in Si1−xGex heterostructure devices. Applied Physics Letters. 58(12). 1317–1319. 23 indexed citations
9.
Noble, D. B., Judy L. Hoyt, William D. Nix, et al.. (1991). The effect of oxygen on the thermal stability of Si1−xGex strained layers. Applied Physics Letters. 58(14). 1536–1538. 10 indexed citations
10.
Noble, D. B., Judy L. Hoyt, William D. Nix, et al.. (1991). The Effect of Oxygen on the Thermal Stability of Si1−xGex Strained Layers Grown by Limited Reaction Processing. MRS Proceedings. 220. 2 indexed citations
11.
Hull, R., J. C. Bean, D. B. Noble, Judy L. Hoyt, & J. F. Gibbons. (1991). Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1−x/Si(100) heterostructures. Applied Physics Letters. 59(13). 1585–1587. 7 indexed citations
12.
Noble, D. B., Judy L. Hoyt, C. A. King, et al.. (1990). Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas. Applied Physics Letters. 56(1). 51–53. 82 indexed citations
13.
Hoyt, Judy L., C. A. King, D. B. Noble, et al.. (1990). Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications. Thin Solid Films. 184(1-2). 93–106. 43 indexed citations
14.
Nix, William D., et al.. (1990). Mechanisms and Kinetics of Misfit Dislocation Formation in Heteroepitaxial Thin Films. MRS Proceedings. 188. 28 indexed citations
15.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Epitaxial Growth of Sil-xGex/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications. MRS Proceedings. 146. 6 indexed citations
16.
Kamins, T. I., K. Nauka, Judy L. Hoyt, et al.. (1989). Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors. IEEE Electron Device Letters. 10(11). 503–505. 48 indexed citations
17.
King, C. A., Judy L. Hoyt, D. B. Noble, et al.. (1989). Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing. IEEE Electron Device Letters. 10(4). 159–161. 29 indexed citations
18.
Noble, D. B., Judy L. Hoyt, J. F. Gibbons, et al.. (1989). Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing. Applied Physics Letters. 55(19). 1978–1980. 26 indexed citations
19.
Scott, M. P., S. S. Laderman, T. I. Kamins, et al.. (1988). Onset of Misfit Dislocation Generation in As-Grown and Annealed Sil-XGex/Si Films. MRS Proceedings. 130. 6 indexed citations
20.
DiFrancesco, Dario & D. B. Noble. (1979). The influence of voltage non-uniformity on the determination of Erev for iK2.. PubMed. 297(0). 158–62. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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