D. B. Noble

476 citations

20 papers · 336 · h-index 8

Impact in

Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering
- Semiconductor materials and devices
- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Advancements in Semiconductor Devices and Circuit Design

Papers in

Electrical and Electronic Engineering 19
- Semiconductor materials and devices 12
- Silicon and Solar Cell Technologies 10
- Thin-Film Transistor Technologies 9
- Advancements in Semiconductor Devices and Circuit Design 5
- Photonic and Optical Devices 3
Atomic and Molecular Physics, and Optics 10
- Semiconductor materials and interfaces 9

Co-authors: J. F. Gibbons (15 shared papers)Judy L. Hoyt (14 shared papers)T. I. Kamins (11 shared papers)C. A. King (8 shared papers)M. P. Scott (10 shared papers)C. M. Gronet (6 shared papers)S. S. Laderman (8 shared papers)K. Nauka (7 shared papers)
Journals: Applied Physics Letters (5 papers)IEEE Electron Device Letters (3 papers)Thin Solid Films (1 paper)Journal of Electronic Materials (1 paper)PubMed (1 paper)
Partner nations: United States Australia

In The Last Decade

D. B. Noble

20 papers receiving 324 citations

Peers

Countries citing papers authored by D. B. Noble

Since Specialization

Citations

This map shows the geographic impact of D. B. Noble's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. B. Noble with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. B. Noble more than expected).

Fields of papers citing papers by D. B. Noble

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. B. Noble. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. B. Noble. The network helps show where D. B. Noble may publish in the future.

Co-authors

The 21 scholars most cited alongside D. B. Noble, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with D. B. Noble Line = papers co-authored together D. B. Noble links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas Applied Physics Letters ·D. B. Noble, Judy L. Hoyt, C. A. King, J. F. Gibbons, T. I. Kamins, M. P. Scott	1990	82
2	Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors IEEE Electron Device Letters ·T. I. Kamins, K. Nauka, J.B. Kruger, Judy L. Hoyt, C. A. King, D. B. Noble, C. M. Gronet, J. F. Gibbons	1989	48
3	Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications Thin Solid Films ·Judy L. Hoyt, C. A. King, D. B. Noble, C. M. Gronet, J. F. Gibbons, M. P. Scott, S. S. Laderman, S. J. Rosner, K. Nauka, J. Turner, T. I. Kamins	1990	43
4	Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing IEEE Electron Device Letters ·C. A. King, Judy L. Hoyt, D. B. Noble, C. M. Gronet, J. F. Gibbons, M. P. Scott, T. I. Kamins, S. S. Laderman	1989	29
5	Mechanisms and Kinetics of Misfit Dislocation Formation in Heteroepitaxial Thin Films MRS Proceedings ·William D. Nix, D. B. Noble, J. F. Turlo	1990	28
6	Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing Applied Physics Letters ·D. B. Noble, Judy L. Hoyt, J. F. Gibbons, M. P. Scott, S. S. Laderman, S. J. Rosner, T. I. Kamins	1989	26
7	Effect of oxygen on minority-carrier lifetime and recombination currents in Si1−xGex heterostructure devices Applied Physics Letters ·T. Ghani, Judy L. Hoyt, D. B. Noble, J. F. Gibbons, J. E. Turner, T. I. Kamins	1991	23
8	The effect of oxygen on the thermal stability of Si1−xGex strained layers Applied Physics Letters ·D. B. Noble, Judy L. Hoyt, William D. Nix, J. F. Gibbons, S. S. Laderman, J. E. Turner, M. P. Scott	1991	10
9	Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers IEEE Electron Device Letters ·T. I. Kamins, K. Nauka, R. D. Jacowitz, I.L. Hoyt, D. B. Noble, J. F. Gibbons	1992	7
10	Electrical characteristics of diodes fabricated in selective Si/Si1−x Ge x epitaxial layers Journal of Electronic Materials ·T. I. Kamins, K. Nauka, R. D. Jacowitz, Judy L. Hoyt, D. B. Noble, J. F. Gibbons	1992	7
11	Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1−x/Si(100) heterostructures Applied Physics Letters ·R. Hull, J. C. Bean, D. B. Noble, Judy L. Hoyt, J. F. Gibbons	1991	7
12	Epitaxial Growth of Si_l-xGe_x/Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications MRS Proceedings ·C. A. King, Judy L. Hoyt, D. B. Noble, C. M. Gronet, J. F. Gibbons, M. P. Scott, S. S. Laderman, T. I. Kamins, J. Turner	1989	6
13	Onset of Misfit Dislocation Generation in As-Grown and Annealed Si_l-XGe_x/Si Films MRS Proceedings ·M. P. Scott, S. S. Laderman, T. I. Kamins, S. J. Rosner, K. Nauka, D. B. Noble, Judy L. Hoyt, C. A. King, C. M. Gronet, J. F. Gibbons	1988	6
14	In Situ Study of Isothermal Strain Relaxation in Si-Ge Heteroepitaxial Films Using Substrate Curvature Measurements MRS Proceedings ·Véronique T. Gillard, D. B. Noble, William D. Nix	1991	5
15	The influence of voltage non-uniformity on the determination of Erev for iK2. PubMed ·Dario DiFrancesco, D. B. Noble	1979	3
16	The Effect of Oxygen on the Thermal Stability of Si_1−xGe_x Strained Layers Grown by Limited Reaction Processing MRS Proceedings ·D. B. Noble, Judy L. Hoyt, P. Kuo, William D. Nix, J. F. Gibbons, S. S. Laderman, J. E. Turner, S. J. Rosner, M. P. Scott	1991	2
17	Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxide MRS Proceedings ·Husam N. Alshareef, A. Karamcheti, T. Y. Luo, George Brown, V.H.C. Watt, M.D. Jackson, Howard R. Huff, R. Jallepally, D. B. Noble, N. Tam, G. Miner	2000	1
18	Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing J. F. Gibbons, C. A. King, Judy L. Hoyt, D. B. Noble, C. M. Gronet, M. P. Scott, S. J. Rosner, Gillian Reid, S. S. Laderman, K. Nauka, J. Turner	2003	1
19	High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors T. I. Kamins, K. Nauka, L.H. Camnitz, J.B. Kruger, J. E. Turner, S. J. Rosner, M. P. Scott, Judy L. Hoyt, C. A. King, D. B. Noble, J. F. Gibbons	2003	1
20	Stress Dependence of the Velocity of Threading Dislocation Segments in Si - Ge Heteroepggaxial Films. MRS Proceedings ·Véronique T. Gillard, D. B. Noble, William D. Nix	1993	1

About D. B. Noble

D. B. Noble is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Mechanics of Materials, having authored 20 papers that have together received 336 indexed citations. Recurring topics across this work include Semiconductor materials and devices (12 papers), Silicon and Solar Cell Technologies (10 papers), Thin-Film Transistor Technologies (9 papers), Semiconductor materials and interfaces (9 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers), Photonic and Optical Devices (3 papers), Nanowire Synthesis and Applications (2 papers) and Silicon Nanostructures and Photoluminescence (2 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (197 citations), Electrical and Electronic Engineering (300 citations), Materials Chemistry (81 citations), Mechanics of Materials (32 citations) and Surfaces, Coatings and Films (9 citations). D. B. Noble has collaborated with scholars based in United States and Australia. Frequent co-authors include J. F. Gibbons, Judy L. Hoyt, T. I. Kamins, C. A. King, M. P. Scott, C. M. Gronet, S. S. Laderman, K. Nauka, William D. Nix and S. J. Rosner. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Thin Solid Films, Journal of Electronic Materials and PubMed.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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