K. Chu

6.0k citations

30 papers · 4.8k indexed · 3 hit papers · h-index 14

Condensed Matter Physics top 0.1%
Electrical and Electronic Engineering top 1%
Electronic, Optical and Magnetic Materials top 1%
Materials Chemistry top 5%
Atomic and Molecular Physics, and Optics top 2%

Co-authors: L.F. Eastman J. Smart J. R. Shealy W. J. Schaff Michael J. Murphy O. Ambacher M. Stutzmann R. Dimitrov
Topics: GaN-based semiconductor devices and materials (27 papers)Radio Frequency Integrated Circuit Design (12 papers)Ga2O3 and related materials (11 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics IEEE Electron Device Letters
Partner nations: United States Germany Sweden

In The Last Decade

K. Chu

30 papers receiving 4.6k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

1999 2.3k citations O. Ambacher, J. Smart et al. Journal of Applied Physics profile →
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 1.3k citations O. Ambacher, B. E. Foutz et al. Journal of Applied Physics profile →
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

2000 615 citations B.M. Green, K. Chu et al. IEEE Electron Device Letters profile →

Peers

Countries citing papers authored by K. Chu

Since Specialization

Citations

This map shows the geographic impact of K. Chu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Chu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Chu more than expected).

Fields of papers citing papers by K. Chu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Chu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Chu. The network helps show where K. Chu may publish in the future.

Co-authorship network of co-authors of K. Chu

This figure shows the co-authorship network connecting the top 25 collaborators of K. Chu. A scholar is included among the top collaborators of K. Chu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Chu. K. Chu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Tunable hybrid silicon single-electron transistor–nanoscale field-effect transistor operating at room temperature 2023 ·Applied Physics Letters ·(unknown),(unknown),K. Chu,A. D. Andreev,Mervyn Jones,Z. A. K. Durrani	5
2	S2-T6: Microchannel cooled, high power GaN-on-Diamond MMIC 2014 ·(unknown),K. Chu,P.C. Chao,(unknown),(unknown),(unknown),(unknown),(unknown),Michael Ohadi,Patrick McCluskey	4
3	S3-P3: Advanced no-field-plate AlGaN/GaN hemts for millimeter-wave MMIC applications 2014 ·D. Xu,K. Chu,José Díaz,(unknown),(unknown),(unknown),(unknown),John Hulse,(unknown),(unknown),(unknown),(unknown),(unknown),K. B. Nichols,J.J. Komiak,Xiaoping Yang,K.H.G. Duh,P.M. Smith,P.C. Chao	7
4	50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN 2011 ·International Journal of High Speed Electronics and Systems ·D. Xu,Xiaoping Yang,(unknown),(unknown),(unknown),(unknown),(unknown),K. Chu,(unknown),(unknown),(unknown),(unknown),(unknown),A. Vera,(unknown),K.H.G. Duh,P.M. Smith,P.C. Chao	3
5	Decade bandwidth 2 to 20 GHz GaN HEMT power amplifier MMICs in DFP and no FP technology 2011 ·2011 IEEE MTT-S International Microwave Symposium ·J.J. Komiak,K. Chu,P.C. Chao	53
6	Progress in GaN devices performances and reliability 2008 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·P. Saunier,(unknown),J. L. Jiménez,(unknown),D.C. Dumka,H.Q. Tserng,Ming-Yih Kao,U. Chowdhury,P.C. Chao,K. Chu,(unknown),I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	1
7	Progress in GaN Performances and Reliability 2007 ·P. Saunier,(unknown),(unknown),D.C. Dumka,J. L. Jiménez,H.Q. Tserng,(unknown),P.C. Chao,K. Chu,(unknown),I. Eliashevich,Shiping Guo,Jesús A. del Alamo,Jungwoo Joh,M. S. Shur	30
8	9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates 2004 ·IEEE Electron Device Letters ·K. Chu,P.C. Chao,(unknown),(unknown),(unknown),K. B. Nichols,R. P. Vaudo,Xin Xu,J.S. Flynn,(unknown),G. R. Brandes	71
9	A novel approach for implementing power system analysis and simulation tools 2001 ·International journal of engineering education ·K. Chu,H.W. Ngan	1
10	The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsbreakdown → 2000 ·IEEE Electron Device Letters ·B.M. Green,K. Chu,Eduardo M. Chumbes,J. Smart,J. R. Shealy,L.F. Eastman	615
11	High efficiency monolithic gallium nitride distributed amplifier 2000 ·IEEE Microwave and Guided Wave Letters ·B.M. Green,Sungjae Lee,K. Chu,Kevin J. Webb,L.F. Eastman	22
12	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices 1999 ·physica status solidi (b) ·O. Ambacher,R. Dimitrov,M. Stutzmann,B. E. Foutz,Michael J. Murphy,J. Smart,J. R. Shealy,Nils Weimann,K. Chu,(unknown),(unknown),(unknown),W. J. Schaff,L.F. Eastman	113
13	High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy 1999 ·Applied Physics Letters ·Michael J. Murphy,K. Chu,(unknown),W. Yeo,W. J. Schaff,O. Ambacher,L.F. Eastman,(unknown),J. Silcox,R. Dimitrov,M. Stutzmann	44
14	Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructuresbreakdown → 1999 ·Journal of Applied Physics ·O. Ambacher,J. Smart,J. R. Shealy,Nils Weimann,K. Chu,Michael J. Murphy,W. J. Schaff,L.F. Eastman,R. Dimitrov,L.L. Wittmer,M. Stutzmann,W. Rieger,J. Hilsenbeck	2340
15	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices 1999 ·physica status solidi (b) ·(unknown),R. Dimitrov,M. Stutzmann,B. E. Foutz,(unknown),J. Smart,J. R. Shealy,Nils Weimann,K. Chu,(unknown),(unknown),(unknown),W. J. Schaff,L.F. Eastman	9
16	Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures 1999 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Michael J. Murphy,K. Chu,(unknown),W. Yeo,W. J. Schaff,O. Ambacher,J. Smart,J. R. Shealy,L.F. Eastman,(unknown)	32
17	Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy 1998 ·MRS Proceedings ·Michael J. Murphy,B. E. Foutz,K. Chu,Hong Wu,W. Yeo,W. J. Schaff,O. Ambacher,L.F. Eastman,(unknown),R. Dimitrov,M. Stutzmann,W. Rieger	1
18	0.12-μm gate III-V nitride HFET's with high contact resistances 1997 ·IEEE Electron Device Letters ·Jinwook Burm,K. Chu,W. J. Schaff,L.F. Eastman,M. Asif Khan,Qi-Sheng Chen,Jinwei Yang,M. S. Shur	56
19	High Frequency AlGaN/GaN MODFET's 1997 ·MRS Internet Journal of Nitride Semiconductor Research ·L.F. Eastman,K. Chu,W. J. Schaff,Michael J. Murphy,Nils Weimann,(unknown)	23
20	Research on GaN MODFET's 1996 ·MRS Internet Journal of Nitride Semiconductor Research ·L.F. Eastman,Jinwook Burm,W. J. Schaff,Michael J. Murphy,K. Chu,Hiroshi Amano,Isamu Akasaki	2

About K. Chu

K. Chu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 30 papers that have together received 4.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (27 papers), Radio Frequency Integrated Circuit Design (12 papers) and Ga2O3 and related materials (11 papers). The work is most often cited by research in Condensed Matter Physics (4.5k citations), Electronic, Optical and Magnetic Materials (2.2k citations) and Atomic and Molecular Physics, and Optics (1.5k citations). K. Chu has collaborated with scholars based in United States, Germany and Sweden. Frequent co-authors include L.F. Eastman, J. Smart, J. R. Shealy, W. J. Schaff, Michael J. Murphy, O. Ambacher, M. Stutzmann, R. Dimitrov, Nils Weimann and W. Rieger. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact