W. Rieger

3.7k total citations · 1 hit paper
20 papers, 3.0k citations indexed

About

W. Rieger is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, W. Rieger has authored 20 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 8 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in W. Rieger's work include GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (5 papers). W. Rieger is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Ga2O3 and related materials (7 papers) and Semiconductor materials and devices (5 papers). W. Rieger collaborates with scholars based in Germany, United States and Austria. W. Rieger's co-authors include O. Ambacher, M. Stutzmann, R. Dimitrov, J. Hilsenbeck, L.L. Wittmer, L.F. Eastman, Michael J. Murphy, W. J. Schaff, K. Chu and Nils Weimann and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

W. Rieger

19 papers receiving 2.9k citations

Hit Papers

Two-dimensional electron gases induced by spontaneous and... 1999 2026 2008 2017 1999 500 1000 1.5k 2.0k
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    1999 2.3k citations O. Ambacher, J. Smart et al. Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
W. Rieger Germany 13 2.7k 1.4k 1.3k 1.1k 913 20 3.0k
A. V. Lunev United States 20 1.3k 0.5× 792 0.6× 873 0.7× 737 0.7× 796 0.9× 55 2.0k
C. R. Miskys Germany 15 1.3k 0.5× 606 0.4× 563 0.4× 645 0.6× 475 0.5× 29 1.5k
B. Jogai United States 22 826 0.3× 1.5k 1.1× 1.8k 1.3× 2.5k 2.3× 835 0.9× 85 3.4k
E. Kamińska Poland 24 522 0.2× 488 0.4× 1.3k 1.0× 947 0.9× 730 0.8× 189 2.0k
Markus Pristovsek Germany 26 1.4k 0.5× 668 0.5× 920 0.7× 927 0.9× 1.1k 1.2× 153 2.3k
А. В. Мудрый Belarus 18 1.1k 0.4× 684 0.5× 1.0k 0.8× 1.3k 1.2× 720 0.8× 121 2.2k
Jai Verma United States 20 1.1k 0.4× 699 0.5× 640 0.5× 484 0.4× 313 0.3× 54 1.4k
C. Sürgers Germany 23 867 0.3× 685 0.5× 398 0.3× 563 0.5× 1.2k 1.3× 122 1.9k
S. A. Shaheen United States 19 911 0.3× 773 0.6× 350 0.3× 778 0.7× 447 0.5× 61 1.7k
Z. G. Khim South Korea 19 677 0.3× 770 0.6× 329 0.3× 1.1k 1.0× 494 0.5× 72 1.7k

Countries citing papers authored by W. Rieger

Since Specialization
Citations

This map shows the geographic impact of W. Rieger's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Rieger with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Rieger more than expected).

Fields of papers citing papers by W. Rieger

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Rieger. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Rieger. The network helps show where W. Rieger may publish in the future.

Co-authorship network of co-authors of W. Rieger

This figure shows the co-authorship network connecting the top 25 collaborators of W. Rieger. A scholar is included among the top collaborators of W. Rieger based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Rieger. W. Rieger is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Ambacher, O., J. Smart, J. R. Shealy, et al.. (1999). Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. Journal of Applied Physics. 85(6). 3222–3233. 2340 indexed citations breakdown →
3.
Dimitrov, R., Arnan Mitchell, L.L. Wittmer, et al.. (1999). Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 38(9R). 4962–4962. 26 indexed citations
4.
Hilsenbeck, J., W. Rieger, E. Nebauer, et al.. (1999). AlGaN/GaN HFETs with New Ohmic and Schottky Contacts for Thermal Stability up to 400 °C. physica status solidi (a). 176(1). 183–187. 22 indexed citations
5.
Würfl, Joachim, et al.. (1999). Reliability considerations of III-nitride microelectronic devices. Microelectronics Reliability. 39(12). 1737–1757. 26 indexed citations
6.
Murphy, Michael J., B. E. Foutz, K. Chu, et al.. (1999). Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 840–845. 7 indexed citations
7.
Murphy, Michael J., B. E. Foutz, K. Chu, et al.. (1998). Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy. MRS Proceedings. 537. 1 indexed citations
8.
Ambacher, O., H. Angerer, R. Dimitrov, et al.. (1997). Hydrogen in Gallium Nitride Grown by MOCVD. physica status solidi (a). 159(1). 105–119. 33 indexed citations
9.
Ambacher, O., et al.. (1997). Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium. Journal of Crystal Growth. 170(1-4). 335–339. 17 indexed citations
10.
Rieger, W., T. Metzger, H. Angerer, et al.. (1996). Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films. Applied Physics Letters. 68(7). 970–972. 191 indexed citations
11.
Miehr, Alexander, et al.. (1996). The first monomeric, volatile bis‐azide single‐source precursor to Gallium nitride thin films. Chemical Vapor Deposition. 2(2). 51–55. 35 indexed citations
12.
Rieger, W., O. Ambacher, E.P. Rohrer, H. Angerer, & M. Stutzmann. (1996). Defect Transitions in GaN Between 3.0 and 3.4 eV. MRS Proceedings. 449. 6 indexed citations
13.
Rieger, W., R. Dimitrov, Daniel Brunner, et al.. (1996). Defect-related optical transitions in GaN. Physical review. B, Condensed matter. 54(24). 17596–17602. 73 indexed citations
14.
Ambacher, O., et al.. (1996). Growth of by low-pressure MOCVD using triethylgallium and tritertbutylaluminium. Journal of Crystal Growth. 167(1-2). 1–7. 25 indexed citations
15.
Ambacher, O., et al.. (1996). Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy. Solid State Communications. 97(5). 365–370. 105 indexed citations
16.
Angerer, H., O. Ambacher, R. Dimitrov, et al.. (1996). PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN. MRS Internet Journal of Nitride Semiconductor Research. 1. 20 indexed citations
17.
Vepřek, S., et al.. (1993). Clusters in A Silane Glow Discharge: Mechanism of Their Formation and How to Avoid Them. MRS Proceedings. 297. 10 indexed citations
18.
Vepřek, S., et al.. (1993). Mechanism of Cluster Formation in a Clean Silane Discharge. Journal of The Electrochemical Society. 140(7). 1935–1942. 35 indexed citations
19.
Rieger, W.. (1986). „No-fault“ in Deutschland? die faszination ist geschwunden. Zeitschrift für die gesamte Versicherungswissenschaft. 75(1-2). 11–34.
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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