V. Tilak

4.0k citations

91 papers · 3.2k indexed · 1 hit paper · h-index 27

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 61
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 12
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 40
- Silicon Carbide Semiconductor Technologies 32
- Radio Frequency Integrated Circuit Design 23
- Advancements in Semiconductor Devices and Circuit Design 20
- Gas Sensing Nanomaterials and Sensors 11
Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices 20
Bioengineering top 5%

Co-authors: L.F. Eastman J. R. Shealy O. Ambacher Hyungtak Kim J. Smart T. Prunty M. Stutzmann Vincenzo Fiorentini
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: IEEE Transactions on Electron Devices (5 papers)Applied Physics Letters (4 papers)IEEE Transactions on Microwave Theory and Techniques (3 papers)
Partner nations: United States Germany Israel

In The Last Decade

V. Tilak

88 papers receiving 3.1k citations

Hit Papers

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Peers

Countries citing papers authored by V. Tilak

Since Specialization

Citations

This map shows the geographic impact of V. Tilak's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Tilak with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Tilak more than expected).

Fields of papers citing papers by V. Tilak

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Tilak. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Tilak. The network helps show where V. Tilak may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Tilak, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Tilak Line = papers co-authored together V. Tilak links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs Materials science forum ·Giuseppina Marsico,Jody Fronheiser,V. Tilak,Kin P. Cheung	2012	7
2	A new interface defect spectroscopy method Zenodo (CERN European Organization for Nuclear Research) ·Jason T. Ryan,Lihua Yu,W.D. Murlin,Joseph J. Kopanski,Kin P. Cheung,Zhan Ying-xian,Chintia Catellan,J. P. Campbell,John S. Suehle,V. Tilak,Jody Fronheiser	2011	2
3	Understanding the Inversion-Layer Properties of the 4H-SiC/SiO<sub>2</sub> Interface Materials science forum ·Kevin Matocha,V. Tilak	2011	18
4	Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H-SiC MOSFETs Materials science forum ·D. Scherbakova,Kevin Matocha,V. Tilak	2009	1
5	A fast, simple wafer-level Hall-mobility measurement technique Giuseppina Marsico,Kin P. Cheung,V. Tilak,Greg Dunne,Kevin Matocha,J. P. Campbell,John S. Suehle,Kuang Sheng	2009	3
6	Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation IEEE Transactions on Electron Devices ·V. Tilak,Kevin Matocha,Greg Dunne,Fredrik Allerstam,E.Ö. Sveinbjörnsson	2009	40
7	Inversion layer electron transport in 4H‐SiC metal–oxide–semiconductor field‐effect transistors physica status solidi (a) ·V. Tilak	2009	33
8	Interface Trap Density and Mobility Characterization of Silicon Carbide MOSFET Inversion Layers Materials science forum ·V. Tilak,Kevin Matocha,Greg Dunne	2009	2
9	Phase noise study of AlGaN/GaN HEMT X‐band oscillator Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Serhiy Danylyuk,S. А. Vitusevich,V. Kaper,V. Tilak,N. Klein,L.F. Eastman,J. R. Shealy	2005	7
10	Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT V. Kaper,V. Tilak,Louise Burchill,Rachel Thompson,T. Prunty,L.F. Eastman,J. R. Shealy	2004	3
11	Hot electron induced degradation of undoped AlGaN/GaN HFETs Microelectronics Reliability ·Hyungtak Kim,A. Vertiatchikh,Richard M. Thompson,V. Tilak,T. Prunty,H. Mayer-Kaupp,L.F. Eastman	2003	24
12	The investigation of properties of electron transport in AlGaN/GaN heterostructures Microelectronics Journal ·Serhiy Danylyuk,S. А. Vitusevich,B. Pődör,A. E. Belyaev,Yara Faris Zalzal,V. Tilak,J. Smart,A. Vertiatchikh,L.F. Eastman	2003	3
13	Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation IEEE Electron Device Letters ·Hyungtak Kim,Richard M. Thompson,V. Tilak,T. Prunty,J. R. Shealy,L.F. Eastman	2003	152
14	Power limits of polarization-induced AlGaN/GaN HEMT's L.F. Eastman,Joané Jansen,J. Smart,V. Tilak,Eduardo M. Chumbes,Hyungtak Kim,T. Prunty,Nils Weimann,R. Dimitrov,O. Ambacher,W. J. Schaff,J. R. Shealy	2002	1
15	Radiation hardness of AlGaN/GaN based HEMTs MRS Proceedings ·S. А. Vitusevich,N. Klein,A. E. Belyaev,Serhiy Danylyuk,M. V. Petrychuk,Р. В. Конакова,Siri Maeland,M.E. Jidkov,Yara Faris Zalzal,B. A. Danilchenko,V. Tilak,J. Smart,A. Vertiatchikh,L.F. Eastman	2002	5
16	Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors Applied Physics Letters ·S. А. Vitusevich,Serhiy Danylyuk,N. Klein,M. V. Petrychuk,V. N. Sokolov,V. A. Kochelap,A. E. Belyaev,V. Tilak,J. Smart,A. Vertiatchikh,L.F. Eastman	2002	27
17	Modulation of Surface Barrier in AlGaN/GaN Heterostructures physica status solidi (b) ·Goutam Koley,Ho‐Young Cha,V. Tilak,L.F. Eastman,Michael G. Spencer	2002	2
18	An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer Journal of Physics Condensed Matter ·J. R. Shealy,V. Kaper,V. Tilak,T. Prunty,J. Smart,Yılmaz Akmeşe,L.F. Eastman	2002	95
19	Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs IEEE Electron Device Letters ·V. Tilak,Louise Burchill,V. Kaper,Hyungtak Kim,T. Prunty,J. Smart,J. R. Shealy,L.F. Eastman	2001	117
20	Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate physica status solidi (a) ·Макеева,V. Tilak,Dana L. Cloud,J. Smart,W. J. Schaff,J. R. Shealy,L.F. Eastman	2001	1

About V. Tilak

V. Tilak is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Bioengineering, having authored 91 papers that have together received 3.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (61 papers), Semiconductor materials and devices (40 papers), Silicon Carbide Semiconductor Technologies (32 papers), Radio Frequency Integrated Circuit Design (23 papers), Semiconductor Quantum Structures and Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Ga2O3 and related materials (12 papers) and Gas Sensing Nanomaterials and Sensors (11 papers). The work is most often cited by research in Condensed Matter Physics (2.6k citations), Electronic, Optical and Magnetic Materials (1.0k citations), Electrical and Electronic Engineering (2.2k citations), Atomic and Molecular Physics, and Optics (999 citations) and Bioengineering (110 citations). V. Tilak has collaborated with scholars based in United States, Germany and Israel. Frequent co-authors include L.F. Eastman, J. R. Shealy, O. Ambacher, Hyungtak Kim, J. Smart, T. Prunty, M. Stutzmann, Vincenzo Fiorentini, Fabio Bernardini and Martin Hermann. Their work appears in journals such as IEEE Transactions on Electron Devices, Applied Physics Letters, IEEE Transactions on Microwave Theory and Techniques, Sensors and Actuators B Chemical and Journal of Physics Condensed Matter.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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