Andrew A. Allerman

8.2k total citations
240 papers, 6.6k citations indexed

About

Andrew A. Allerman is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Andrew A. Allerman has authored 240 papers receiving a total of 6.6k indexed citations (citations by other indexed papers that have themselves been cited), including 170 papers in Electrical and Electronic Engineering, 156 papers in Condensed Matter Physics and 93 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Andrew A. Allerman's work include GaN-based semiconductor devices and materials (156 papers), Semiconductor Quantum Structures and Devices (82 papers) and Semiconductor materials and devices (75 papers). Andrew A. Allerman is often cited by papers focused on GaN-based semiconductor devices and materials (156 papers), Semiconductor Quantum Structures and Devices (82 papers) and Semiconductor materials and devices (75 papers). Andrew A. Allerman collaborates with scholars based in United States, South Korea and Australia. Andrew A. Allerman's co-authors include S. R. Kurtz, Andrew Armstrong, Mary H. Crawford, E. D. Jones, Robert Kaplar, A. J. Fischer, Albert G. Baca, S. R. Kurtz, Michael W. Moseley and D. M. Follstaedt and has published in prestigious journals such as Nature Communications, SHILAP Revista de lepidopterología and Physical review. B, Condensed matter.

In The Last Decade

Andrew A. Allerman

231 papers receiving 6.3k citations

Peers

Countries citing papers authored by Andrew A. Allerman

Since Specialization

Citations

This map shows the geographic impact of Andrew A. Allerman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andrew A. Allerman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andrew A. Allerman more than expected).

Fields of papers citing papers by Andrew A. Allerman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andrew A. Allerman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andrew A. Allerman. The network helps show where Andrew A. Allerman may publish in the future.

Co-authorship network of co-authors of Andrew A. Allerman

This figure shows the co-authorship network connecting the top 25 collaborators of Andrew A. Allerman. A scholar is included among the top collaborators of Andrew A. Allerman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Andrew A. Allerman. Andrew A. Allerman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	High breakdown electric field (>5 MV/cm) in UWBG AlGaN transistors 2025 ·ArXiv.org ·(unknown), (unknown), Jerry W. Pratt, John Niroula, (unknown), Chandan Joishi, Brianna Klein, Andrew Armstrong, Andrew A. Allerman, Tomás Palacios, Siddharth Rajan	0
2	Phonon transport in Al-rich AlxGa1−xN thin films 2025 ·Journal of Applied Physics ·(unknown), (unknown), Yiwen Song, Husam Walwil, (unknown), (unknown), Mi‐Hee Ji, (unknown), Christopher B. Saltonstall, Andrew A. Allerman, (unknown), Joan M. Redwing, Jonathan A. Malen, Alan J. H. McGaughey, Sukwon Choi	0
3	Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN 2025 ·Applied Physics Letters ·(unknown), Andrew A. Allerman, Chandan Joishi, (unknown), (unknown), (unknown), Brianna Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan	6
4	Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts 2024 ·Advanced Materials Interfaces ·Brianna Klein, Andrew A. Allerman, Andrew Armstrong, (unknown), (unknown), (unknown), Chandan Joishi, (unknown), Siddharth Rajan	4
5	High current density 1.2 kV class HfO₂-gated vertical GaN trench MOSFETs 2024 ·Applied Physics Express ·Andrew Binder, (unknown), Kevin J. Reilly, (unknown), (unknown), (unknown), Andrew A. Allerman, Robert Kaplar	4
6	Origins of epitaxial macro-terraces and macro-steps on GaN substrates 2023 ·Journal of Applied Physics ·Michael E. Liao, (unknown), Kenny Huynh, (unknown), Yekan Wang, Xianrong Huang, Michael Wojcik, Andrew A. Allerman, Mark S. Goorsky	1
7	Multi-active region AlGaN UV LEDs with transparent tunnel junctions 2023 ·Applied Physics Express ·(unknown), (unknown), Sheikh Ifatur Rahman, Andrew A. Allerman, (unknown), Roberto C. Myers, Shamsul Arafin, Siddharth Rajan	1
8	Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions 2022 ·IEEE Transactions on Electron Devices ·Luke Yates, Brendan Gunning, Mary H. Crawford, (unknown), Michael L. Smith, (unknown), Jeramy Ray Dickerson, Andrew Armstrong, Andrew Binder, Andrew A. Allerman, Robert Kaplar	44
9	Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes 2021 ·IEEE Electron Device Letters ·(unknown), Andrew Armstrong, A. Alec Talin, Andrew A. Allerman, Mary H. Crawford, Gregory Pickrell, François Léonard	2
10	Identification of Star Defects in Gallium Nitride with HREBSD and ECCI 2021 ·Microscopy and Microanalysis ·Timothy Ruggles, Julia Deitz, Andrew A. Allerman, (unknown), Joseph R. Michael	12
11	High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors 2020 ·Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Patrick H. Carey, F. Ren, Andrew Armstrong, Brianna Klein, Andrew A. Allerman, E Douglas, Albert G. Baca, S. J. Pearton	4
12	Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor 2019 ·Applied Physics Letters ·James Spencer Lundh, Bikramjit Chatterjee, Yiwen Song, Albert G. Baca, Robert Kaplar, Thomas E. Beechem, Andrew A. Allerman, Andrew Armstrong, Brianna Klein, Anushka Bansal, (unknown), Alexej Pogrebnyakov, Eric R. Heller, Venkatraman Gopalan, Joan M. Redwing, Brian M. Foley, Sukwon Choi	37
13	Bevel Edge Termination for Vertical GaN Power Diodes 2019 ·OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·Andrew Binder, Jeramy Ray Dickerson, Mary H. Crawford, (unknown), Andrew A. Allerman, Paul Sharps, Robert Kaplar	10
14	High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study 2019 ·Japanese Journal of Applied Physics ·(unknown), Brianna Klein, Albert G. Baca, Andrew Armstrong, Andrew A. Allerman, E Douglas, Robert Kaplar	10
15	Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces 2018 ·Applied Physics Letters ·Elizabeth A. Paisley, Michael T. Brumbach, Christopher T. Shelton, Andrew A. Allerman, Stanley Atcitty, Christina M. Rost, James Anthony Ohlhausen, Barney L. Doyle, Zlatko Sitar, Jon‐Paul Maria, Jon F. Ihlefeld	4
16	High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm 2017 ·IEEE Electron Device Letters ·Sanyam Bajaj, Andrew A. Allerman, Andrew Armstrong, Towhidur Razzak, (unknown), (unknown), Shahadat H. Sohel, Yuewei Zhang, Wu Lu, Aaron R. Arehart, Fatih Akyol, Siddharth Rajan	51
17	Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene 2017 ·2D Materials ·Albert F. Rigosi, Heather M. Hill, Nicholas R. Glavin, Sujitra Pookpanratana, Yanfei Yang, (unknown), Jiuning Hu, A.L. Rice, Andrew A. Allerman, Nhan V. Nguyen, Christina A. Hacker, Randolph E. Elmquist, Angela R. Hight Walker, David B. Newell	26
18	Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes 2016 ·Applied Physics Letters ·M. King, Robert Kaplar, Jeramy Ray Dickerson, S. R. Lee, Andrew A. Allerman, Mary H. Crawford, A. J. Fischer, (unknown), Jack Flicker, R. M. Fleming, I.C. Kizilyalli, Özgür Aktaş, Andrew Armstrong	11
19	Enhanced optical nonlinearities in the near-infrared using III-nitride heterostructures coupled to metamaterials 2015 ·Applied Physics Letters ·Omri Wolf, Andrew A. Allerman, Xuedan Ma, Joel R. Wendt, Yu Song, Eric A. Shaner, Igal Brener	22
20	An MOCVD-grown, pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 /spl mu/m 1996 ·Conference on Lasers and Electro-Optics ·S. R. Kurtz, R. M. Biefeld, Andrew A. Allerman, A. J. Howard, Mary H. Crawford, (unknown)	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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