M. Asif Khan

11.0k citations

118 papers · 7.9k indexed · 1 hit paper · h-index 50

Condensed Matter Physics top 0.05%
- GaN-based semiconductor devices and materials 112
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials 37
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 29
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 36
Mechanics of Materials top 0.5%
- Metal and Thin Film Mechanics 28
Materials Chemistry
- ZnO doping and properties 29
Biomedical Engineering
- Acoustic Wave Resonator Technologies 12
- Photocathodes and Microchannel Plates 10

Co-authors: J. N. Kuznia M. S. Shur D. T. Olson Q. Chen Amal R. Bhattarai I. Adesida C. J. Sun Jinhong Yang
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical review. B, Condensed matter (5 papers)Applied Physics Letters (46 papers)Journal of Applied Physics (6 papers)
Partner nations: United States Lithuania France

In The Last Decade

M. Asif Khan

114 papers receiving 7.7k citations

Hit Papers

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Peers

Countries citing papers authored by M. Asif Khan

Since Specialization

Citations

This map shows the geographic impact of M. Asif Khan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Asif Khan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Asif Khan more than expected).

Fields of papers citing papers by M. Asif Khan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Asif Khan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Asif Khan. The network helps show where M. Asif Khan may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Asif Khan, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Asif Khan Line = papers co-authored together M. Asif Khan links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Structural Optimization of Si Nanowires for Ultimate Efficiency Improvement via Tuning Optical Properties Transactions on Electrical and Electronic Materials ·Sakti Prasanna Muduli,M. Asif Khan,Paresh Kale	2023	5
2	Interdependence of morphological attributes and optoelectronic properties of porous silicon-nanowires Journal of Materials Science Materials in Electronics ·Sakti Prasanna Muduli,M. Asif Khan,Paresh Kale	2023	4
3	Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V. Semet,Vu Thien Binh,Jianping Zhang,J. Yang,M. Asif Khan,Raphael Tsu	2005	6
4	Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells Applied Physics Letters ·E. Kuokštis,C. Q. Chen,Mikhail Gaevski,Wenhong Sun,Jinwei Yang,G. Simin,M. Asif Khan,H. P. Maruska,David W. Hill,M. C. Chou,John J. Gallagher,B. H. T. Chai	2002	96
5	Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters ·S. L. Rumyantsev,Nezih Pala,M. S. Shur,R. Gaška,M. E. Levinshteĭn,V. Adivarahan,J. Yang,G. Simin,M. Asif Khan	2001	55
6	Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN Applied Physics Letters ·B. P. Luther,Suzanne E. Mohney,Thomas N. Jackson,M. Asif Khan,Q. Chen,Jinwei Yang	1997	218
7	Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time Physical review. B, Condensed matter ·Stanley Pau,J. Kühl,F. Scholz,Volker Haerle,M. Asif Khan,C. J. Sun	1997	19
8	Dry etching of using chemically assisted ion beam etching Semiconductor Science and Technology ·A. T. Ping,M. Asif Khan,I. Adesida	1997	9
9	Metastability and Persistent Photoconductivity of Mg-Doped P-Type GaN APS March Meeting Abstracts ·J. Y. Lin,Cameron Johnson,Hong Jiang,M. Asif Khan,C. J. Sun	1996	1
10	Growth defects in GaN films on sapphire: The probable origin of threading dislocations Journal of materials research/Pratt's guide to venture capital sources ·X. J. Ning,F. R. Chien,P. Pirouz,Jun Yang,M. Asif Khan	1996	279
11	Ohmic contacts to n-type GaN using Pd/Al metallization Journal of Electronic Materials ·A. T. Ping,M. Asif Khan,I. Adesida	1996	44
12	Characterisation of Pd Schottky barrier on n -typeGaN Electronics Letters ·A. T. Ping,A. C. Schmitz,M. Asif Khan,I. Adesida	1996	56
13	Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors Applied Physics Letters ·M. Asif Khan,Q. Chen,C. J. Sun,J. Yang,M. Blasingame,M. S. Shur,H. Park	1996	148
14	Annealing Study of Ion Implanted MOCVD and MBE Grown GaN MRS Proceedings ·E. Silkowski,Y. K. Yeo,R. L. Hengehold,M. Asif Khan,Ting Lei,K. R. Evans,Charles Cerny	1995	12
15	Acceptor-bound exciton recombination dynamics in p-type GaN Applied Physics Letters ·M. Smith,G. D. Chen,J. Y. Lin,H. X. Jiang,M. Asif Khan,C. J. Sun	1995	20
16	Chemically assisted ion beam etching of gallium nitride Journal of Electronic Materials ·A. T. Ping,C. Youtsey,I. Adesida,M. Asif Khan,J. N. Kuznia	1995	23
17	Gated photodetector based on GaN/AlGaN heterostructurefieldeffect transistor Electronics Letters ·M. Asif Khan,M. S. Shur,Q. Chen,J. N. Kuznia,Chi Sun	1995	73
18	Characteristics of chemically assisted ion beam etching of gallium nitride Applied Physics Letters ·I. Adesida,A. T. Ping,C. Youtsey,T. A. Dow,M. Asif Khan,D. T. Olson,J. N. Kuznia	1994	67
19	Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions Applied Physics Letters ·M. Asif Khan,J. N. Kuznia,J. M. Van Hove,N. Pan,J. Carter	1992	179
20	High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers Applied Physics Letters ·M. Asif Khan,J. N. Kuznia,D. T. Olson,J. M. Van Hove,M. Blasingame,Larry F. Reitz	1992	326

About M. Asif Khan

M. Asif Khan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 118 papers that have together received 7.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (112 papers), Ga2O3 and related materials (37 papers), Semiconductor materials and devices (36 papers), ZnO doping and properties (29 papers), Semiconductor Quantum Structures and Devices (29 papers), Metal and Thin Film Mechanics (28 papers), Acoustic Wave Resonator Technologies (12 papers) and Photocathodes and Microchannel Plates (10 papers). The work is most often cited by research in Condensed Matter Physics (7.0k citations), Electronic, Optical and Magnetic Materials (3.3k citations) and Atomic and Molecular Physics, and Optics (2.5k citations). M. Asif Khan has collaborated with scholars based in United States, Lithuania and France. Frequent co-authors include J. N. Kuznia, M. S. Shur, D. T. Olson, Q. Chen, Amal R. Bhattarai, I. Adesida, C. J. Sun, Jinhong Yang, A. T. Ping and J. M. Van Hove. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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