M. Asif Khan

11.0k citations

118 papers · 7.9k indexed · 1 hit paper · h-index 50

Condensed Matter Physics top 0.05%
Electrical and Electronic Engineering top 1%
Electronic, Optical and Magnetic Materials top 0.5%
Materials Chemistry top 2%
Atomic and Molecular Physics, and Optics top 1%

Co-authors: J. N. Kuznia M. S. Shur D. T. Olson Q. Chen Amal R. Bhattarai I. Adesida C. J. Sun Jinhong Yang
Topics: GaN-based semiconductor devices and materials (112 papers)Ga2O3 and related materials (37 papers)Semiconductor materials and devices (36 papers)
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: United States Lithuania France

In The Last Decade

M. Asif Khan

114 papers receiving 7.7k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction

1993 715 citations M. Asif Khan, J. N. Kuznia et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by M. Asif Khan

Since Specialization

Citations

This map shows the geographic impact of M. Asif Khan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Asif Khan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Asif Khan more than expected).

Fields of papers citing papers by M. Asif Khan

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Asif Khan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Asif Khan. The network helps show where M. Asif Khan may publish in the future.

Co-authorship network of co-authors of M. Asif Khan

This figure shows the co-authorship network connecting the top 25 collaborators of M. Asif Khan. A scholar is included among the top collaborators of M. Asif Khan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Asif Khan. M. Asif Khan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Structural Optimization of Si Nanowires for Ultimate Efficiency Improvement via Tuning Optical Properties 2023 ·Transactions on Electrical and Electronic Materials ·Sakti Prasanna Muduli,M. Asif Khan,Paresh Kale	5
2	Interdependence of morphological attributes and optoelectronic properties of porous silicon-nanowires 2023 ·Journal of Materials Science Materials in Electronics ·Sakti Prasanna Muduli,M. Asif Khan,Paresh Kale	4
3	Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier 2005 ·Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V. Semet,Vu Thien Binh,Jianping Zhang,J. Yang,M. Asif Khan,Raphael Tsu	6
4	Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells 2002 ·Applied Physics Letters ·E. Kuokštis,(unknown),Mikhail Gaevski,Wenhong Sun,Jinwei Yang,G. Simin,M. Asif Khan,H. P. Maruska,David W. Hill,M. C. Chou,John J. Gallagher,B. H. T. Chai	96
5	Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors 2001 ·Applied Physics Letters ·S. L. Rumyantsev,Nezih Pala,M. S. Shur,R. Gaška,M. E. Levinshteĭn,V. Adivarahan,J. Yang,G. Simin,M. Asif Khan	55
6	Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN 1997 ·Applied Physics Letters ·B. P. Luther,Suzanne E. Mohney,Thomas N. Jackson,M. Asif Khan,(unknown),Jinwei Yang	218
7	Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time 1997 ·Physical review. B, Condensed matter ·Stanley Pau,J. Kühl,F. Scholz,(unknown),M. Asif Khan,C. J. Sun	19
8	Dry etching of using chemically assisted ion beam etching 1997 ·Semiconductor Science and Technology ·A. T. Ping,M. Asif Khan,I. Adesida	9
9	Metastability and Persistent Photoconductivity of Mg-Doped P-Type GaN 1996 ·APS March Meeting Abstracts ·J. Y. Lin,(unknown),(unknown),M. Asif Khan,C. J. Sun	1
10	Growth defects in GaN films on sapphire: The probable origin of threading dislocations 1996 ·Journal of materials research/Pratt's guide to venture capital sources ·X. J. Ning,F. R. Chien,P. Pirouz,Jun Yang,M. Asif Khan	279
11	Ohmic contacts to n-type GaN using Pd/Al metallization 1996 ·Journal of Electronic Materials ·A. T. Ping,M. Asif Khan,I. Adesida	44
12	Characterisation of Pd Schottky barrier on n -typeGaN 1996 ·Electronics Letters ·A. T. Ping,A. C. Schmitz,M. Asif Khan,I. Adesida	56
13	Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors 1996 ·Applied Physics Letters ·M. Asif Khan,Q. Chen,C. J. Sun,J. Yang,(unknown),M. S. Shur,(unknown)	148
14	Annealing Study of Ion Implanted MOCVD and MBE Grown GaN 1995 ·MRS Proceedings ·(unknown),Y. K. Yeo,R. L. Hengehold,M. Asif Khan,Ting Lei,K. R. Evans,(unknown)	12
15	Acceptor-bound exciton recombination dynamics in p-type GaN 1995 ·Applied Physics Letters ·M. Smith,G. D. Chen,J. Y. Lin,H. X. Jiang,M. Asif Khan,C. J. Sun	20
16	Chemically assisted ion beam etching of gallium nitride 1995 ·Journal of Electronic Materials ·A. T. Ping,C. Youtsey,I. Adesida,M. Asif Khan,J. N. Kuznia	23
17	Gated photodetector based on GaN/AlGaN heterostructurefieldeffect transistor 1995 ·Electronics Letters ·M. Asif Khan,M. S. Shur,Q. Chen,J. N. Kuznia,Chi Sun	73
18	Characteristics of chemically assisted ion beam etching of gallium nitride 1994 ·Applied Physics Letters ·I. Adesida,A. T. Ping,C. Youtsey,T. A. Dow,M. Asif Khan,D. T. Olson,J. N. Kuznia	67
19	Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions 1992 ·Applied Physics Letters ·M. Asif Khan,J. N. Kuznia,J. M. Van Hove,N. Pan,(unknown)	179
20	High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers 1992 ·Applied Physics Letters ·M. Asif Khan,J. N. Kuznia,D. T. Olson,J. M. Van Hove,(unknown),(unknown)	326

About M. Asif Khan

M. Asif Khan is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 118 papers that have together received 7.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (112 papers), Ga2O3 and related materials (37 papers) and Semiconductor materials and devices (36 papers). The work is most often cited by research in Condensed Matter Physics (7.0k citations), Electronic, Optical and Magnetic Materials (3.3k citations) and Atomic and Molecular Physics, and Optics (2.5k citations). M. Asif Khan has collaborated with scholars based in United States, Lithuania and France. Frequent co-authors include J. N. Kuznia, M. S. Shur, D. T. Olson, Q. Chen, Amal R. Bhattarai, I. Adesida, C. J. Sun, Jinhong Yang, A. T. Ping and J. M. Van Hove. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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