H. Angerer

2.5k total citations · 1 hit paper
33 papers, 2.1k citations indexed

About

H. Angerer is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, H. Angerer has authored 33 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Condensed Matter Physics, 13 papers in Electrical and Electronic Engineering and 11 papers in Mechanics of Materials. Recurrent topics in H. Angerer's work include GaN-based semiconductor devices and materials (28 papers), Metal and Thin Film Mechanics (11 papers) and Ga2O3 and related materials (8 papers). H. Angerer is often cited by papers focused on GaN-based semiconductor devices and materials (28 papers), Metal and Thin Film Mechanics (11 papers) and Ga2O3 and related materials (8 papers). H. Angerer collaborates with scholars based in Germany, Switzerland and United States. H. Angerer's co-authors include O. Ambacher, M. Stutzmann, R. Dimitrov, R. Höpler, Daniel Brunner, E. Bustarret, W. Rieger, N. Ibl, E. Born and J. Cl. Puippe and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

H. Angerer

33 papers receiving 2.1k citations

Hit Papers

Optical constants of epit... 1997 2026 2006 2016 1997 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Optical constants of epitaxial AlGaN films and their temperature dependence
    1997 512 citations Daniel Brunner, H. Angerer et al. Journal of Applied Physics profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
H. Angerer 1.6k 845 765 737 623 33 2.1k
S. A. Nikishin 1.9k 1.2× 874 1.0× 1.1k 1.5× 810 1.1× 942 1.5× 117 2.5k
Tsvetanka Zheleva 2.0k 1.2× 1.4k 1.7× 1.2k 1.6× 1.0k 1.4× 669 1.1× 73 2.9k
Shunro Fuke 1.3k 0.8× 1.2k 1.5× 902 1.2× 977 1.3× 500 0.8× 75 2.1k
T. D. Moustakas 1.6k 1.0× 1.1k 1.3× 686 0.9× 841 1.1× 613 1.0× 74 2.2k
Kris A. Bertness 1.3k 0.8× 1.2k 1.4× 967 1.3× 737 1.0× 689 1.1× 106 2.5k
W. J. Schaff 2.0k 1.2× 1.2k 1.4× 1.0k 1.3× 1.2k 1.6× 1.1k 1.8× 85 2.8k
O. Semchinova 2.1k 1.3× 1.2k 1.4× 676 0.9× 1.1k 1.6× 711 1.1× 42 2.5k
E. J. Tarsa 1.8k 1.1× 1.2k 1.5× 980 1.3× 1.1k 1.5× 582 0.9× 31 2.4k
S. Figge 2.1k 1.3× 1.2k 1.4× 735 1.0× 1.0k 1.4× 655 1.1× 115 2.4k
Xu‐Qiang Shen 1.1k 0.7× 668 0.8× 539 0.7× 614 0.8× 537 0.9× 98 1.6k

Countries citing papers authored by H. Angerer

Since Specialization
Citations

This map shows the geographic impact of H. Angerer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Angerer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Angerer more than expected).

Fields of papers citing papers by H. Angerer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Angerer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Angerer. The network helps show where H. Angerer may publish in the future.

Co-authorship network of co-authors of H. Angerer

This figure shows the co-authorship network connecting the top 25 collaborators of H. Angerer. A scholar is included among the top collaborators of H. Angerer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Angerer. H. Angerer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bayerl, M. W., et al.. (2000). Magnetic resonance investigations of defects in Ga14N and Ga15N. Journal of Applied Physics. 88(6). 3249–3253. 2 indexed citations
2.
Wethkamp, T., K. Wilmers, N. Esser, et al.. (1998). Spectroscopic ellipsometry measurements of Al Ga1−N in the energy range 3–25 eV. Thin Solid Films. 313-314. 745–750. 50 indexed citations
3.
Bayerl, M. W., Martin S. Brandt, H. Angerer, O. Ambacher, & M. Stutzmann. (1998). Spin-Dependent Processes and Mg-Acceptors in GaN Single Quantum Well Diodes and p-Type GaN Films. physica status solidi (b). 210(2). 389–393. 2 indexed citations
4.
Stutzmann, M., O. Ambacher, H. Angerer, Christoph E. Nebel, & E.P. Rohrer. (1998). Electrical and structural properties of AlGaN: A comparison with CVD diamond. Diamond and Related Materials. 7(2-5). 123–128. 3 indexed citations
5.
Değer, Caner, E. Born, H. Angerer, et al.. (1998). Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements. Applied Physics Letters. 72(19). 2400–2402. 220 indexed citations
6.
Cros, A., H. Angerer, O. Ambacher, et al.. (1997). Raman study of the optical phonons in AlxGa1−xN alloys. Solid State Communications. 104(1). 35–39. 54 indexed citations
7.
Cros, A., et al.. (1997). Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD. MRS Internet Journal of Nitride Semiconductor Research. 2. 20 indexed citations
8.
Stutzmann, M., O. Ambacher, Martin S. Brandt, et al.. (1997). Properties and applications of MBE grown AlGaN. Materials Science and Engineering B. 50(1-3). 212–218. 47 indexed citations
9.
Kelly, M. K., et al.. (1997). Laser-Processing for Patterned and Free-Standing Nitride Films. MRS Proceedings. 482. 11 indexed citations
10.
Ambacher, O., H. Angerer, R. Dimitrov, et al.. (1997). Hydrogen in Gallium Nitride Grown by MOCVD. physica status solidi (a). 159(1). 105–119. 33 indexed citations
11.
Dollinger, G., S. Karsch, O. Ambacher, et al.. (1997). Elemental Analysis On Group-Hi Nitrides Using Heavy Ion Erd. MRS Proceedings. 482. 3 indexed citations
12.
Brunner, Daniel, H. Angerer, E. Bustarret, et al.. (1997). Optical constants of epitaxial AlGaN films and their temperature dependence. Journal of Applied Physics. 82(10). 5090–5096. 512 indexed citations breakdown →
13.
Ambacher, O., M. Arzberger, Daniel Brunner, et al.. (1997). AlGaN-Based Bragg Reflectors. MRS Internet Journal of Nitride Semiconductor Research. 2. 38 indexed citations
14.
Rieger, W., T. Metzger, H. Angerer, et al.. (1996). Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films. Applied Physics Letters. 68(7). 970–972. 191 indexed citations
15.
Kelly, M. K., O. Ambacher, G. Groos, et al.. (1996). Optical patterning of GaN films. Applied Physics Letters. 69(12). 1749–1751. 118 indexed citations
16.
Angerer, H., et al.. (1996). Spin Resonance Investigations of GaN and AlGaN. MRS Proceedings. 449. 3 indexed citations
17.
Rieger, W., O. Ambacher, E.P. Rohrer, H. Angerer, & M. Stutzmann. (1996). Defect Transitions in GaN Between 3.0 and 3.4 eV. MRS Proceedings. 449. 6 indexed citations
18.
Metzger, T. H., H. Angerer, O. Ambacher, M. Stutzmann, & E. Born. (1996). X‐ray diffraction study of gallium nitride grown by MOCVD. physica status solidi (b). 193(2). 391–397. 15 indexed citations
19.
Ambacher, O., et al.. (1996). Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy. Solid State Communications. 97(5). 365–370. 105 indexed citations
20.
Lindner, Helmut, et al.. (1988). A new multiwire proportional chamber with fast single strip readout and individual analog to digital conversion. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 273(1). 444–446. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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