W. Yeo

410 citations

10 papers · 351 indexed · h-index 7

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 6
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 5
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 6
Materials Chemistry
Electrical and Electronic Engineering
- Semiconductor materials and devices 3
- Photonic and Optical Devices 2
- Advancements in Semiconductor Devices and Circuit Design 1
- Perovskite Materials and Applications 1
Biomedical Engineering
- Acoustic Wave Resonator Technologies 1

Co-authors: W. J. Schaff L.F. Eastman Jeonghyun Hwang H. J. Lü Hong Wu R. Dimitrov O. Ambacher S. G. Matsik
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (5 papers)MRS Internet Journal of Nitride Semiconductor Research (1 paper)Solid-State Electronics (1 paper)
Partner nations: United States Germany Canada

In The Last Decade

W. Yeo

10 papers receiving 346 citations

Peers

Countries citing papers authored by W. Yeo

Since Specialization

Citations

This map shows the geographic impact of W. Yeo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Yeo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Yeo more than expected).

Fields of papers citing papers by W. Yeo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Yeo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Yeo. The network helps show where W. Yeo may publish in the future.

Co-authorship network

The 25 scholars most cited alongside W. Yeo, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with W. Yeo Line = papers co-authored together W. Yeo links everyone, so they are left out of the graph.

All Works

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10 of 10 papers shown

#	Work
1	35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs Infrared Physics & Technology ·A. G. U. Perera,S. G. Matsik,H.C. Liu,M. Gao,M. Buchanan,W. J. Schaff,W. Yeo	2001	3
2	The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates Applied Physics Letters ·W. Yeo,R. Dimitrov,W. J. Schaff,L.F. Eastman	2000	6
3	GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm Applied Physics Letters ·A. G. U. Perera,S. G. Matsik,H. C. Liu,M. Gao,M. Buchanan,W. J. Schaff,W. Yeo	2000	54
4	Improvement on epitaxial grown of InN by migration enhanced epitaxy Applied Physics Letters ·H. J. Lü,W. J. Schaff,Jeonghyun Hwang,Hong Wu,W. Yeo,Rekha Gehtori,L.F. Eastman	2000	179
5	Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates Applied Physics Letters ·W. Yeo,R. Dimitrov,W. J. Schaff,L.F. Eastman	2000	5
6	Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors Solid-State Electronics ·R. Dimitrov,V. Tilak,W. Yeo,Yılmaz Akmeşe,Hyungtak Kim,J. Smart,Eduardo M. Chumbes,J. R. Shealy,W. J. Schaff,L.F. Eastman,C. R. Miskys,O. Ambacher,M. Stutzmann	2000	20
7	High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters ·Michael J. Murphy,K. Chu,Luis Francisco Zavargo Peche,W. Yeo,W. J. Schaff,O. Ambacher,L.F. Eastman,Raquel Montes Martínez,J. Silcox,R. Dimitrov,M. Stutzmann	1999	44
8	Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·Michael J. Murphy,K. Chu,Luis Francisco Zavargo Peche,W. Yeo,W. J. Schaff,O. Ambacher,J. Smart,J. R. Shealy,L.F. Eastman,Raquel Montes Martínez	1999	32
9	Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy MRS Internet Journal of Nitride Semiconductor Research ·Michael J. Murphy,B. E. Foutz,K. Chu,Hong Wu,W. Yeo,W. J. Schaff,O. Ambacher,L.F. Eastman,Raquel Montes Martínez,R. Dimitrov,M. Stutzmann,W. Rieger	1999	7
10	Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy MRS Proceedings ·Michael J. Murphy,B. E. Foutz,K. Chu,Hong Wu,W. Yeo,W. J. Schaff,O. Ambacher,L.F. Eastman,Raquel Montes Martínez,R. Dimitrov,M. Stutzmann,W. Rieger	1998	1

About W. Yeo

W. Yeo is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Biomedical Engineering, having authored 10 papers that have together received 351 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (6 papers), GaN-based semiconductor devices and materials (6 papers), Ga2O3 and related materials (5 papers), Semiconductor materials and devices (3 papers), Photonic and Optical Devices (2 papers), Advancements in Semiconductor Devices and Circuit Design (1 paper), Perovskite Materials and Applications (1 paper) and Acoustic Wave Resonator Technologies (1 paper). The work is most often cited by research in Condensed Matter Physics (280 citations), Electronic, Optical and Magnetic Materials (172 citations), Atomic and Molecular Physics, and Optics (149 citations), Materials Chemistry (135 citations) and Electrical and Electronic Engineering (129 citations). W. Yeo has collaborated with scholars based in United States, Germany and Canada. Frequent co-authors include W. J. Schaff, L.F. Eastman, Jeonghyun Hwang, H. J. Lü, Hong Wu, R. Dimitrov, O. Ambacher, S. G. Matsik, A. G. U. Perera and M. Gao. Their work appears in journals such as Applied Physics Letters, MRS Internet Journal of Nitride Semiconductor Research, Solid-State Electronics, Infrared Physics & Technology and Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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