W. Yeo

410 total citations
10 papers, 351 citations indexed

About

W. Yeo is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, W. Yeo has authored 10 papers receiving a total of 351 indexed citations (citations by other indexed papers that have themselves been cited), including 7 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in W. Yeo's work include Semiconductor Quantum Structures and Devices (6 papers), GaN-based semiconductor devices and materials (6 papers) and Ga2O3 and related materials (5 papers). W. Yeo is often cited by papers focused on Semiconductor Quantum Structures and Devices (6 papers), GaN-based semiconductor devices and materials (6 papers) and Ga2O3 and related materials (5 papers). W. Yeo collaborates with scholars based in United States, Germany and Canada. W. Yeo's co-authors include W. J. Schaff, L.F. Eastman, Jeonghyun Hwang, H. J. Lü, Hong Wu, R. Dimitrov, O. Ambacher, S. G. Matsik, A. G. U. Perera and M. Gao and has published in prestigious journals such as Applied Physics Letters, Solid-State Electronics and Infrared Physics & Technology.

In The Last Decade

W. Yeo

10 papers receiving 346 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
W. Yeo United States	7	280	172	149	135	129	10	351
A. Khachapuridze Poland	11	222 0.8×	124 0.7×	138 0.9×	185 1.4×	138 1.1×	36	350
Mark Beeler France	12	303 1.1×	137 0.8×	193 1.3×	136 1.0×	123 1.0×	15	387
M. Razeghi France	10	191 0.7×	151 0.9×	246 1.7×	144 1.1×	266 2.1×	32	471
R. Mair United States	9	266 0.9×	113 0.7×	246 1.7×	118 0.9×	204 1.6×	23	412
Tsunenori Asatsuma Japan	12	355 1.3×	118 0.7×	290 1.9×	154 1.1×	167 1.3×	27	455
K. K. Choi South Korea	9	351 1.3×	106 0.6×	221 1.5×	117 0.9×	144 1.1×	20	375
J. S. Tsang Taiwan	12	245 0.9×	122 0.7×	268 1.8×	140 1.0×	276 2.1×	34	473
Torsten Langer Germany	10	335 1.2×	146 0.8×	198 1.3×	187 1.4×	131 1.0×	18	398
Masaaki Onomura Japan	8	335 1.2×	104 0.6×	268 1.8×	95 0.7×	164 1.3×	20	404
Anna Feduniewicz‐Żmuda Poland	15	410 1.5×	142 0.8×	264 1.8×	146 1.1×	182 1.4×	44	475

Countries citing papers authored by W. Yeo

Since Specialization

Citations

This map shows the geographic impact of W. Yeo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by W. Yeo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites W. Yeo more than expected).

Fields of papers citing papers by W. Yeo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by W. Yeo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by W. Yeo. The network helps show where W. Yeo may publish in the future.

Co-authorship network of co-authors of W. Yeo

This figure shows the co-authorship network connecting the top 25 collaborators of W. Yeo. A scholar is included among the top collaborators of W. Yeo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with W. Yeo. W. Yeo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

Perera, A. G. U., S. G. Matsik, H.C. Liu, et al.. (2001). 35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs. Infrared Physics & Technology. 42(3-5). 157–162. 3 indexed citations

Yeo, W., R. Dimitrov, W. J. Schaff, & L.F. Eastman. (2000). The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates. Applied Physics Letters. 77(17). 2764–2766. 6 indexed citations

Perera, A. G. U., S. G. Matsik, H. C. Liu, et al.. (2000). GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm. Applied Physics Letters. 77(5). 741–743. 54 indexed citations

Lü, H. J., W. J. Schaff, Jeonghyun Hwang, et al.. (2000). Improvement on epitaxial grown of InN by migration enhanced epitaxy. Applied Physics Letters. 77(16). 2548–2550. 179 indexed citations

Yeo, W., R. Dimitrov, W. J. Schaff, & L.F. Eastman. (2000). Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates. Applied Physics Letters. 77(26). 4292–4294. 5 indexed citations

Dimitrov, R., V. Tilak, W. Yeo, et al.. (2000). Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors. Solid-State Electronics. 44(8). 1361–1365. 20 indexed citations

Murphy, Michael J., K. Chu, W. Yeo, et al.. (1999). High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 75(23). 3653–3655. 44 indexed citations

Murphy, Michael J., K. Chu, W. Yeo, et al.. (1999). Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 17(3). 1252–1254. 32 indexed citations

Murphy, Michael J., B. E. Foutz, K. Chu, et al.. (1999). Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy. MRS Internet Journal of Nitride Semiconductor Research. 4(S1). 840–845. 7 indexed citations

10.

Murphy, Michael J., B. E. Foutz, K. Chu, et al.. (1998). Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy. MRS Proceedings. 537. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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