B. E. Foutz

3.9k citations

37 papers · 3.2k indexed · 2 hit papers · h-index 18

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 26
- GaN-based semiconductor devices and materials 26
Hardware and Architecture 8
- VLSI and Analog Circuit Testing 8

Co-authors: L.F. Eastman M. S. Shur Stephen K. O’Leary Michael J. Murphy W. J. Schaff O. Ambacher J. Smart J. R. Shealy
Journals: Applied Physics Letters (4 papers)Solid State Communications (4 papers)physica status solidi (b) (3 papers)Journal of Applied Physics (3 papers)Journal of Materials Science Materials in Electronics (2 papers)
Partner nations: United States Canada Germany

In The Last Decade

B. E. Foutz

36 papers receiving 3.0k citations

Hit Papers

align trajectories log scale

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures 2000 · 1.3k citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2000 Journal of Applied Physics
1999 Journal of Applied Physics

Peers

Countries citing papers authored by B. E. Foutz

Since Specialization

Citations

This map shows the geographic impact of B. E. Foutz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. E. Foutz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. E. Foutz more than expected).

Fields of papers citing papers by B. E. Foutz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. E. Foutz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. E. Foutz. The network helps show where B. E. Foutz may publish in the future.

Co-authors

The 25 scholars most cited alongside B. E. Foutz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with B. E. Foutz Line = papers co-authored together B. E. Foutz links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	PPA Optimization of Test Points in Automotive Designs B. E. Foutz, 進大和田, Prateek Kumar, Z. Ben Abdallah, Vivek Chickermane, ماهر صبري كاظم, Khairul Baqir Alkhair Khairul Amin, Ante Džaja, Frank Gonzalez	2022	1
2	Efficient testing of hierarchical core-based SOCs Brion Keller, Z. Ben Abdallah, B. E. Foutz, Vivek Chickermane, Yuan Zhao-wen, Randall M. Schoonover, Jeremy Sage, Yousif Y Maalderink, T.J. Snethen	2014	11
3	Low cost at-speed testing using On-Product Clock Generation compatible with test compression Brion Keller, Z. Ben Abdallah, B. E. Foutz, Vivek Chickermane, Miaogen Sun, T.J. Snethen, V. Iyengar, R. Jayanthi, DIVYA GOYAL	2010	3
4	Steady-state and transient electron transport within bulk wurtzite zinc oxide Solid State Communications ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2010	31
5	The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis Journal of Materials Science Materials in Electronics ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2009	21
6	Potential performance of indium-nitride-based devices Applied Physics Letters ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2006	82
7	Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis Applied Physics Letters ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2005	78
8	Channel masking synthesis for efficient on-chip test compression Vivek Chickermane, B. E. Foutz, Brion Keller	2005	98
9	Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis Journal of Electronic Materials ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2003	28
10	Polar optical phonon instability and intervalley transfer in III–V semiconductors Solid State Communications ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman	2001	25
11	Electron transport and device modeling in the group-III nitrides PhDT ·B. E. Foutz	2000	1
12	GaN/SiC heterojunction bipolar transistors Solid-State Electronics ·W. J. Schaff, Hong Wu, Min Jiyoon, Michael J. Murphy, Raquel Montes Martínez, B. E. Foutz, O. Ambacher, L.F. Eastman	2000	8
13	Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices physica status solidi (b) ·O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, Michael J. Murphy, J. Smart, J. R. Shealy, Nils Weimann, K. Chu, Ursi Lugenbuhl, Louise Burchill, Jonathan Farhi, W. J. Schaff, L.F. Eastman	1999	113
14	Transient electron transport in wurtzite GaN, InN, and AlN Journal of Applied Physics ·B. E. Foutz, Stephen K. O’Leary, M. S. Shur, L.F. Eastman Hit paper breakdown →	1999	457
15	The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures MRS Proceedings ·B. E. Foutz, Michael J. Murphy, O. Ambacher, V. Tilak, J. Smart, J. R. Shealy, W. J. Schaff, L.F. Eastman	1999	3
16	An Optical Gap Calibration Applied to the Case of Hydrogenated Amorphous Silicon MRS Proceedings ·Devendran Jagadisan, Stephen K. O’Leary, B. E. Foutz	1999	1
17	Monte Carlo simulation of electron transport in wurtzite aluminum nitride Solid State Communications ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, Udayan V. Bhapkar, L.F. Eastman	1998	62
18	A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride MRS Proceedings ·B. E. Foutz, Stephen K. O’Leary, M. S. Shur, L.F. Eastman	1998	7
19	Comparison of high field electron transport in GaN and GaAs Applied Physics Letters ·B. E. Foutz, L.F. Eastman, Udayan V. Bhapkar, M. S. Shur	1997	138
20	The Velocity-Field Characteristic Of Indium Nitride MRS Proceedings ·Stephen K. O’Leary, B. E. Foutz, M. S. Shur, L.F. Eastman, Udayan V. Bhapkar	1997	9

About B. E. Foutz

B. E. Foutz is a scholar working on Condensed Matter Physics, Hardware and Architecture, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 37 papers that have together received 3.2k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (26 papers), Semiconductor Quantum Structures and Devices (13 papers), Semiconductor materials and devices (11 papers), Ga2O3 and related materials (10 papers), VLSI and Analog Circuit Testing (8 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Advancements in Semiconductor Devices and Circuit Design (5 papers) and Low-power high-performance VLSI design (4 papers). The work is most often cited by research in Condensed Matter Physics (2.7k citations), Electronic, Optical and Magnetic Materials (1.4k citations), Atomic and Molecular Physics, and Optics (1.2k citations), Electrical and Electronic Engineering (1.5k citations) and Materials Chemistry (1.1k citations). B. E. Foutz has collaborated with scholars based in United States, Canada and Germany. Frequent co-authors include L.F. Eastman, M. S. Shur, Stephen K. O’Leary, Michael J. Murphy, W. J. Schaff, O. Ambacher, J. Smart, J. R. Shealy, Nils Weimann and M. Stutzmann. Their work appears in journals such as Applied Physics Letters, Solid State Communications, physica status solidi (b), Journal of Applied Physics and Journal of Materials Science Materials in Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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