S. Strite

8.2k citations

48 papers · 6.9k indexed · 3 hit papers · h-index 23

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials 28
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials 13
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 23
- Semiconductor materials and interfaces 8
Electrical and Electronic Engineering top 1%
- Semiconductor materials and devices 18
- Photonic and Optical Devices 9
- Semiconductor Lasers and Optical Devices 7
Mechanics of Materials top 0.5%
Materials Chemistry
- ZnO doping and properties 9

Co-authors: H. Morkoç H. Morkoç̌Mao Lin B. Sverdlov Guangjun Gao M. Selim Ünlü Angus Rockett David J. Smith
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters (13 papers)Journal of Applied Physics (5 papers)MRS Internet Journal of Nitride Semiconductor Research (4 papers)
Partner nations: United States Switzerland Germany

In The Last Decade

S. Strite

48 papers receiving 6.7k citations

Hit Papers

align trajectories log scale

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

1995 Journal of Applied Physics
1994 Journal of Applied Physics
1992 Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Peers

Countries citing papers authored by S. Strite

Since Specialization

Citations

This map shows the geographic impact of S. Strite's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Strite with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Strite more than expected).

Fields of papers citing papers by S. Strite

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Strite. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Strite. The network helps show where S. Strite may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Strite, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Strite Line = papers co-authored together S. Strite links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing Journal of Applied Physics ·T. Suski,J. Jun,M. Leszczyński,H. Teisseyre,S. Strite,Angus Rockett,A. Pelzmann,M. Kamp,K.J. Ebeling	1998	26
2	Nitride semiconductors. Materials Research Society symposium proceedings Volume 482 OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) ·F. A. Ponce,Steven P. DenBaars,Bertrand Meyer,Shuji Nakamura,S. Strite	1998	2
3	Properties of InGaN deposited on Glass at Low Temperature MRS Internet Journal of Nitride Semiconductor Research ·Tilman Beierlein,S. Strite,Alex Dommann,David J. Smith	1997	13
4	Valence-band discontinuity between GaN and AIN measured by x-ray photoemission spectroscopy Journal of Electronic Materials ·G. Martin,S. Strite,A. Botchkarev,Anchal Agarwal,Angus Rockett,Walter R. L. Lambrecht,B. Segall,H. Morkoç̌	1995	13
5	Tunable photodetectors and light-emitting diodesfor wavelength division multiplexing Electronics Letters ·S. Strite,M. Selim Ünlü	1995	4
6	Reliable substrate temperature measurements for high temperature AlGaAs molecular-beam epitaxy growth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Strite,M. Kamp,H. P. Meier	1995	4
7	X-ray photoelectron spectroscopy and theory of the valence band and semicore Ga 3dstates in GaN Physical review. B, Condensed matter ·Walter R. L. Lambrecht,B. Segall,S. Strite,G. Martin,Anchal Agarwal,H. Morkoç̌,Angus Rockett	1994	91
8	Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy Applied Physics Letters ·G. Martin,S. Strite,A. Botchkarev,Anchal Agarwal,Angus Rockett,H. Morkoç̌,Walter R. L. Lambrecht,B. Segall	1994	192
9	GaN Core Relaxation Effects and Their Ramifications for P-Type Doping Japanese Journal of Applied Physics ·S. Strite	1994	40
10	Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe Journal of Crystal Growth ·S. Strite,D. Chandrasekhar,David J. Smith,Philip Holden,Hao Chen,N. Teraguchi,H. Morkoç̌	1993	84
11	Characteristics of in-situ deposited Si3N4⧸Si⧸In0.53Ga0.47As metal-insulator-semiconductor structures Journal of Crystal Growth ·David Mui,A. L. Demirel,S. Strite,Zhiyue Wang,J. Reed,D. Biswas,H. Morkoç̌	1993	3
12	Reduction of outdiffusion at the Ge/GaAs (100) interface by low temperature growth Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·A. Levent Demirel,S. Strite,Anchal Agarwal,Mehmet Ünlü,H. Morkoç,Angus Rockett	1992	4
13	A collector design study for GaAs/Ge/GaAs double heterojunction bipolar transistors Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Strite,M. Selim Ünlü,A. L. Demirel,David Mui,H. Morkoç	1992	4
14	Electrical properties of GaAs/GaN/GaAs semiconductor-insulator-semiconductor structures Applied Physics Letters ·A. Salomoni,S. Strite,Daniela Sheinkman,H. Morkoç	1991	46
15	Molecular beam epitaxial growth of GaAs and other compound semiconductors Thin Solid Films ·K. Adomi,Jen‐Inn Chyi,S. F. Fang,T. C. Shen,S. Strite,H. Morkoç̌	1991	10
16	An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·S. Strite,J. Ruan,Peilin Yang,Arnel Salvador,Hao 浩 Chen 陈,David J. Smith,W. J. Choyke,H. Morkoç	1991	273
17	Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer Applied Physics Letters ·João C. W. A. Costa,F. Williamson,Thomas J. Miller,Nely Carbajal Quispe,M. I. Nathan,David Mui,S. Strite,H. Morkoç̌	1991	46
18	Extremely low-resistance nonalloyed ohmic contacts on molecular beam epitaxially grown p -type Ge Electronics Letters ·Mehmet Ünlü,S. Strite,K. Adomi,Guangjun Gao,H. Morkoç̌	1990	1
19	Si as a diffusion barrier for Ge/GaAs heterojunctions Applied Physics Letters ·S. Strite,M. Selim Ünlü,K. Adomi,H. Morkoç̌	1990	15
20	Study of sublattice orientation of GaAs on Ge Journal of Applied Physics ·S. Strite,D. Biswas,K. Adomi,H. Morkoç̌	1990	12

About S. Strite

S. Strite is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials, having authored 48 papers that have together received 6.9k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (28 papers), Semiconductor Quantum Structures and Devices (23 papers), Semiconductor materials and devices (18 papers), Ga2O3 and related materials (13 papers), Photonic and Optical Devices (9 papers), ZnO doping and properties (9 papers), Semiconductor materials and interfaces (8 papers) and Semiconductor Lasers and Optical Devices (7 papers). The work is most often cited by research in Condensed Matter Physics (4.6k citations), Electronic, Optical and Magnetic Materials (2.1k citations) and Atomic and Molecular Physics, and Optics (2.5k citations). S. Strite has collaborated with scholars based in United States, Switzerland and Germany. Frequent co-authors include H. Morkoç, H. Morkoç̌, Mao Lin, B. Sverdlov, Guangjun Gao, M. Selim Ünlü, Angus Rockett, David J. Smith, Anchal Agarwal and G. Martin. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, MRS Internet Journal of Nitride Semiconductor Research, Electronics Letters and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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