U. Karrer
- Condensed Matter Physics top 5%
- Electrical and Electronic Engineering top 10%
- Materials Chemistry
- Electronic, Optical and Magnetic Materials top 10%
- Atomic and Molecular Physics, and Optics top 10%
- Co-authors
- M. StutzmannO. AmbacherMartin EickhoffJ. SchalwigG. DollingerGerhard MüllerL. GörgensP. James Schuck
- Topics
- GaN-based semiconductor devices and materials (10 papers)Ga2O3 and related materials (6 papers)Semiconductor materials and interfaces (5 papers)
- Journals
- Applied Physics LettersJournal of Non-Crystalline SolidsJapanese Journal of Applied Physics
- Partner nations
- GermanyUnited StatesBulgaria
In The Last Decade
U. Karrer
13 papers receiving 561 citations
Peers
Comparison fields: 5 of 27
- Condensed Matter Physics 402
- Electrical and Electronic Engineering 356
- Materials Chemistry 213
- Electronic, Optical and Magnetic Materials 186
- Atomic and Molecular Physics, and Optics 173
Countries citing papers authored by U. Karrer
This map shows the geographic impact of U. Karrer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Karrer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Karrer more than expected).
Fields of papers citing papers by U. Karrer
This network shows the impact of papers produced by U. Karrer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Karrer. The network helps show where U. Karrer may publish in the future.
Co-authorship network of co-authors of U. Karrer
This figure shows the co-authorship network connecting the top 25 collaborators of U. Karrer. A scholar is included among the top collaborators of U. Karrer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Karrer. U. Karrer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 14 | |
| 2 | 16 | |
| 3 | 1 | |
| 4 | 167 | |
| 5 | 1 | |
| 6 | 151 | |
| 7 | 155 | |
| 8 | 18 | |
| 9 | 17 | |
| 10 | 4 | |
| 11 | 10 | |
| 12 | 1 | |
| 13 | 32 |
About U. Karrer
U. Karrer is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics, having authored 13 papers that have together received 587 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (6 papers) and Semiconductor materials and interfaces (5 papers). The work is most often cited by research in Condensed Matter Physics (402 citations), Bioengineering (67 citations) and Electronic, Optical and Magnetic Materials (186 citations). U. Karrer has collaborated with scholars based in Germany, United States and Bulgaria. Frequent co-authors include M. Stutzmann, O. Ambacher, Martin Eickhoff, J. Schalwig, G. Dollinger, Gerhard Müller, L. Görgens, P. James Schuck, R. Neuberger and R. Dimitrov. Their work appears in journals such as Applied Physics Letters, Journal of Non-Crystalline Solids and Japanese Journal of Applied Physics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.