U. Karrer

688 total citations
13 papers, 587 citations indexed

About

U. Karrer is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, U. Karrer has authored 13 papers receiving a total of 587 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Condensed Matter Physics, 6 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in U. Karrer's work include GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (6 papers) and Semiconductor materials and interfaces (5 papers). U. Karrer is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Ga2O3 and related materials (6 papers) and Semiconductor materials and interfaces (5 papers). U. Karrer collaborates with scholars based in Germany, United States and Bulgaria. U. Karrer's co-authors include M. Stutzmann, O. Ambacher, Martin Eickhoff, J. Schalwig, G. Dollinger, Gerhard Müller, L. Görgens, R. Neuberger, P. James Schuck and R. Dimitrov and has published in prestigious journals such as Applied Physics Letters, Journal of Non-Crystalline Solids and Japanese Journal of Applied Physics.

In The Last Decade

U. Karrer

13 papers receiving 561 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
U. Karrer Germany	9	402	356	213	186	173	13	587
B. P. Luther United States	12	743 1.8×	602 1.7×	272 1.3×	323 1.7×	233 1.3×	16	930
J.S. Flynn United States	13	614 1.5×	484 1.4×	214 1.0×	243 1.3×	283 1.6×	27	780
N. Dharmarasu Singapore	14	263 0.7×	451 1.3×	177 0.8×	174 0.9×	217 1.3×	67	628
Kwan Soo Chung South Korea	9	386 1.0×	253 0.7×	424 2.0×	265 1.4×	98 0.6×	23	683
H.‐H. Wehmann Germany	16	299 0.7×	305 0.9×	369 1.7×	232 1.2×	190 1.1×	44	653
S.J. Chang Taiwan	16	612 1.5×	417 1.2×	342 1.6×	298 1.6×	220 1.3×	48	812
Junxue Ran China	14	576 1.4×	367 1.0×	358 1.7×	402 2.2×	208 1.2×	47	828
Benjamin Neuschl Germany	16	612 1.5×	290 0.8×	308 1.4×	355 1.9×	169 1.0×	37	752
Junji Kotani Japan	18	910 2.3×	844 2.4×	269 1.3×	408 2.2×	323 1.9×	59	1.1k
I. Halidou Tunisia	15	318 0.8×	346 1.0×	381 1.8×	157 0.8×	100 0.6×	41	570

Countries citing papers authored by U. Karrer

Since Specialization

Citations

This map shows the geographic impact of U. Karrer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by U. Karrer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites U. Karrer more than expected).

Fields of papers citing papers by U. Karrer

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by U. Karrer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by U. Karrer. The network helps show where U. Karrer may publish in the future.

Co-authorship network of co-authors of U. Karrer

This figure shows the co-authorship network connecting the top 25 collaborators of U. Karrer. A scholar is included among the top collaborators of U. Karrer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with U. Karrer. U. Karrer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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13 of 13 papers shown

Martínez‐Criado, Gema, C. R. Miskys, U. Karrer, O. Ambacher, & M. Stutzmann. (2004). Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures. Japanese Journal of Applied Physics. 43(6R). 3360–3360. 14 indexed citations

Shokhovets, S., D. Fuhrmann, R. Goldhahn, et al.. (2003). Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity. Applied Physics Letters. 82(11). 1712–1714. 16 indexed citations

Martínez‐Criado, Gema, A. Cros, A. Cantarero, et al.. (2002). Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 392–396. 1 indexed citations

Schalwig, J., Gerhard Müller, U. Karrer, et al.. (2002). Hydrogen response mechanism of Pt–GaN Schottky diodes. Applied Physics Letters. 80(7). 1222–1224. 167 indexed citations

Shokhovets, S., D. Fuhrmann, R. Goldhahn, et al.. (2002). Study of Exciton Dead Layers in GaN Schottky Diodes with N and Ga-Face Polarity. physica status solidi (a). 194(2). 480–484. 1 indexed citations

Stutzmann, M., O. Ambacher, Martin Eickhoff, et al.. (2001). Playing with Polarity. physica status solidi (b). 228(2). 505–512. 151 indexed citations

Karrer, U., et al.. (2000). AlGaN-based ultraviolet light detectors with integrated optical filters. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(2). 757–760. 18 indexed citations

Karrer, U., O. Ambacher, & M. Stutzmann. (2000). Influence of crystal polarity on the properties of Pt/GaN Schottky diodes. Applied Physics Letters. 77(13). 2012–2014. 155 indexed citations

Lima, Alisson Padilha de, C. R. Miskys, U. Karrer, et al.. (2000). Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy. Journal of Crystal Growth. 220(4). 341–344. 17 indexed citations

10.

Karrer, U., et al.. (1999). Characterization of AlGaN-Schottky Diodes Grown by Plasma Induced Molecular Beam Epitaxy. physica status solidi (a). 176(1). 163–167. 4 indexed citations

11.

Karrer, U., et al.. (1998). Amorphous silicon suboxide light-emitting diodes. Journal of Non-Crystalline Solids. 227-230. 1151–1155. 10 indexed citations

12.

Nebel, Christoph E., et al.. (1998). Laser-Interference Crystallization of Amorphous Silicon: Applications and Properties. physica status solidi (a). 166(2). 667–674. 32 indexed citations

13.

Karrer, U., et al.. (1998). Conductive microcrystalline-Si films produced by laser processing. Journal of Non-Crystalline Solids. 227-230. 916–920. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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