Lingyan Shen

684 total citations
43 papers, 463 citations indexed

About

Lingyan Shen is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Lingyan Shen has authored 43 papers receiving a total of 463 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 17 papers in Condensed Matter Physics and 17 papers in Materials Chemistry. Recurrent topics in Lingyan Shen's work include Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (17 papers) and Graphene research and applications (11 papers). Lingyan Shen is often cited by papers focused on Semiconductor materials and devices (27 papers), GaN-based semiconductor devices and materials (17 papers) and Graphene research and applications (11 papers). Lingyan Shen collaborates with scholars based in China, United States and Germany. Lingyan Shen's co-authors include Yuehui Yu, Li Zheng, Xinhong Cheng, Qian Wang, Duo Cao, Xinhong Cheng, Zhongjian Wang, Chao Xia, Jingjie Li and Yuehua Hu and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Hazardous Materials.

In The Last Decade

Lingyan Shen

40 papers receiving 455 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Lingyan Shen China 13 319 214 187 141 54 43 463
Virginia R. Anderson United States 13 372 1.2× 312 1.5× 58 0.3× 87 0.6× 51 0.9× 18 486
Mutlu Kundakçı Türkiye 12 305 1.0× 375 1.8× 59 0.3× 59 0.4× 47 0.9× 44 470
Lorenzo Caccamo Germany 9 225 0.7× 189 0.9× 125 0.7× 113 0.8× 131 2.4× 11 384
M. Rekaby Egypt 13 89 0.3× 243 1.1× 218 1.2× 194 1.4× 47 0.9× 24 432
Bernat Bozzo Spain 11 162 0.5× 331 1.5× 109 0.6× 294 2.1× 39 0.7× 15 473
Mehrdad Baghaie Yazdi Germany 12 136 0.4× 225 1.1× 80 0.4× 160 1.1× 23 0.4× 19 399
Jiangshan Zheng China 13 208 0.7× 554 2.6× 114 0.6× 161 1.1× 57 1.1× 21 659
Huiqiang Bao China 7 187 0.6× 272 1.3× 53 0.3× 127 0.9× 26 0.5× 11 364
Yurong Yang China 11 164 0.5× 246 1.1× 61 0.3× 167 1.2× 75 1.4× 34 402
Guangmei Zhai China 17 482 1.5× 577 2.7× 99 0.5× 121 0.9× 76 1.4× 46 707

Countries citing papers authored by Lingyan Shen

Since Specialization
Citations

This map shows the geographic impact of Lingyan Shen's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lingyan Shen with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lingyan Shen more than expected).

Fields of papers citing papers by Lingyan Shen

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lingyan Shen. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lingyan Shen. The network helps show where Lingyan Shen may publish in the future.

Co-authorship network of co-authors of Lingyan Shen

This figure shows the co-authorship network connecting the top 25 collaborators of Lingyan Shen. A scholar is included among the top collaborators of Lingyan Shen based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lingyan Shen. Lingyan Shen is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shen, Lingyan, et al.. (2025). Monolithic Integration of p-GaN HEMT With Antiparallel Lateral Rectifier to Reduce the Negative Resistance Effect. IEEE Transactions on Power Electronics. 40(5). 6860–6873.
2.
Shen, Lingyan, et al.. (2025). Dynamic Performance Analysis of p-GaN HEMTs With Floating Substrates by Substrate Capacitance Coupling Model. IEEE Transactions on Electron Devices. 72(5). 2201–2206. 1 indexed citations
3.
4.
Li, Wei, Junyan Chen, Rong Chen, et al.. (2025). Delivery of small interfering RNA through lyophilized natural lipid nanoparticles: effects of natural lipid selection. Pharmaceutical Biology. 63(1). 343–356. 1 indexed citations
5.
Zheng, Li, et al.. (2024). Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration. SHILAP Revista de lepidopterología. 4(1). 100119–100119. 1 indexed citations
6.
Shen, Lingyan, et al.. (2024). A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance. Microelectronics Journal. 153. 106442–106442. 1 indexed citations
7.
Zheng, Li, et al.. (2023). Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs. IEEE Transactions on Electron Devices. 70(6). 2975–2980.
8.
Shen, Lingyan, Xinhong Cheng, Li Zheng, Qi Luo, & Zhongjian Wang. (2020). Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations. 1–3. 1 indexed citations
9.
Cheng, Xinhong, et al.. (2018). Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors. Materials & Design. 148. 1–7. 13 indexed citations
10.
Zheng, Li, Xinhong Cheng, Peiyi Ye, et al.. (2018). Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing. RSC Advances. 8(3). 1477–1480. 5 indexed citations
11.
Zheng, Li, Xinhong Cheng, Wenjia Zhou, et al.. (2018). Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors. Superlattices and Microstructures. 125. 281–286. 4 indexed citations
12.
Wang, Qian, Xinhong Cheng, Li Zheng, et al.. (2017). Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3. RSC Advances. 7(19). 11745–11751. 37 indexed citations
13.
Wang, Qian, Xinhong Cheng, Li Zheng, et al.. (2017). Band alignment between PEALD-AlNO and AlGaN/GaN determined by angle-resolved X-ray photoelectron spectroscopy. Applied Surface Science. 423. 675–679. 11 indexed citations
14.
Wang, Qian, Xinhong Cheng, Li Zheng, et al.. (2017). Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy. Applied Surface Science. 409. 71–76. 11 indexed citations
15.
Li, Jingjie, Xinhong Cheng, Qian Wang, et al.. (2017). Morphology improvement of SiC trench by inductively coupled plasma etching using Ni/Al 2 O 3 bilayer mask. Materials Science in Semiconductor Processing. 67. 104–109. 9 indexed citations
16.
Wang, Qian, Xinhong Cheng, Li Zheng, et al.. (2017). Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy. Applied Surface Science. 428. 1–6. 14 indexed citations
17.
Zheng, Li, Xinhong Cheng, Duo Cao, et al.. (2014). Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene. Materials Letters. 137. 200–202. 9 indexed citations
18.
Liu, Xiaowen, Zhao Huang, Yuehua Hu, et al.. (2014). Fabrication of flexible graphene paper and its electrochemical properties used in lithium ion batteries. The European Physical Journal Applied Physics. 66(3). 30301–30301. 6 indexed citations
19.
Cheng, Xinhong, Chao Xia, Dawei Xu, et al.. (2014). Total ionizing dose effects in high breakdown voltage SOI devices. 1–4. 9 indexed citations
20.
Zheng, Lirong, Xinhong Cheng, Duo Cao, et al.. (2013). HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 32(1). 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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