P. Llinarès

423 citations

27 papers · 308 indexed · h-index 13

Impact in

Electrical and Electronic Engineering
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Low-power high-performance VLSI design
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
Hardware and Architecture

Papers in

Electrical and Electronic Engineering 27
- Advancements in Semiconductor Devices and Circuit Design 26
- Semiconductor materials and devices 20
- Radio Frequency Integrated Circuit Design 6
- Integrated Circuits and Semiconductor Failure Analysis 6
- Electrostatic Discharge in Electronics 5
- Low-power high-performance VLSI design 2
Hardware and Architecture 3
- VLSI and Analog Circuit Testing 3

Co-authors: G. Ghibaudo J. A. Chroboczek J.C. Vildeuil M. Marin M. de Murcia M. Jamal Deen Éric Granger D. Céli
Journals: Solid-State Electronics (6 papers)Microelectronics Reliability (3 papers)Journal of Applied Physics (2 papers)IEICE Transactions on Electronics (1 paper)IEEE Electron Device Letters (1 paper)
Partner nations: France Switzerland Canada

In The Last Decade

P. Llinarès

27 papers receiving 286 citations

Peers

Countries citing papers authored by P. Llinarès

Since Specialization

Citations

This map shows the geographic impact of P. Llinarès's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Llinarès with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Llinarès more than expected).

Fields of papers citing papers by P. Llinarès

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Llinarès. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Llinarès. The network helps show where P. Llinarès may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Llinarès, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Llinarès Line = papers co-authored together P. Llinarès links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology IEE Proceedings - Circuits Devices and Systems ·M. Marin, M. Jamal Deen, M. de Murcia, P. Llinarès, J.C. Vildeuil	2004	21
2	A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide IEEE Electron Device Letters ·M. Marin, M. Jamal Deen, Kalil Riccardi Potenza, P. Llinarès, J.C. Vildeuil	2004	11
3	Impact of pocket implant on MOSFET mismatch for advanced CMOS technology Leopoldo Estrada, O. Noblanc, C. Julien, Fatimzohra Tmimi, Francisco Javier Iborra Femanía, Santamaría Rodríguez, P. Llinarès	2004	12
4	Comparison between matching parameters and fluctuations at the wafer level Santamaría Rodríguez, P. Llinarès, Hideki Mishima, R. Palla, Catherine Garnier, G. Ghibaudo	2003	16
5	Impact of grain number fluctuations in the MOS transistor gate on matching performance Santamaría Rodríguez, J.C. Vildeuil, P. Llinarès, G. Ghibaudo	2003	20
6	Effects of body biasing on the low-frequency noise of NMOSFETs from a 130-nm CMOS technology Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·M. Marin, M. Jamal Deen, M. de Murcia, P. Llinarès, Petrenko Yuliya M.	2003	2
7	A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements P. Llinarès, G. Ghibaudo, Jesus Sanz Castro, Richard W. Law, 강우일 베드로, Rachmawati Rachmawati, J. A. Chroboczek	2002	5
8	0.25 μm fully depleted SOI MOSFETs for RF mixed analog-digital circuits, including a comparison with partially depleted devices with relation to high frequency noise parameters Solid-State Electronics ·Luise Hutzschenreuter, C. Raynaud, O. Faynot, J.L. Pelloie, C. Tabone, A. Grouillet, F. Martín, G. Dambrine, Mikaela Soares Silva, Jae-Woo Song, P. Llinarès, J. Sevenhans, Luc Harnist, G. D. Fletcher, Denis Flandre, Vincent Dessard, D. Vanhoenacker, Jean‐Pierre Raskin	2002	12
9	Effect of substrate voltage and oxide thickness on NMOSFET matching characteristics for a 0.18 μm CMOS technology Santamaría Rodríguez, P. Llinarès, Éric Granger, H. Brut, G. Ghibaudo	2002	7
10	1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology Solid-State Electronics ·Bermúdez Leguizamón, M. de Murcia, J.C. Vildeuil, M. Valenza, P. Llinarès, Elizaveta Andreevna Nefedova	2002	9
11	A 54 GHz f/sub max/ implanted base 0.35 μm single-polysilicon bipolar technology SPIRE - Sciences Po Institutional REpository ·Gongbing Guo, O. Rozeau, E. J. Speyerer, C. Hernández, P. Llinarès, M. Guillermet, Olga González Calderón, 강우일 베드로, J. de Pontcharra, G. Auvert, B. Blanchard, M. Mouis, G. Vincent, A. Chantre	2002	3
12	A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate Santamaría Rodríguez, P. Llinarès, Yasmin Alfaki, Éric Granger, G. Ghibaudo	2001	10
13	LOW FREQUENCY NOISE CHARACTERIZATION IN 0.18 µm TECHNOLOGY N AND P CHANNEL MOSFETS. Bermúdez Leguizamón, M. Marin, M. de Murcia, P. Llinarès, Elizaveta Andreevna Nefedova	2001	1
14	IMPACT OF GATE ENGINEERING AND SILICIDATION ON LOW FREQUENCY NOISE CHARACTERISTICS IN 0.18 µm TECHNOLOGY MOSFETS M. de Murcia, M. Marin, Bermúdez Leguizamón, D. Rigaud, P. Llinarès, Elizaveta Andreevna Nefedova	2001	1
15	Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT Microelectronics Reliability ·Jurijs Grigorjevs, A. Pénarier, F. Pascal, 马金禄, P. Llinarès	2000	8
16	Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements IEICE Transactions on Electronics ·P. Llinarès, G. Ghibaudo, Richard W. Law, Jesus Sanz Castro, Felipe Correa Pedro, J. A. Chroboczek	1999	1
17	A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters IEEE Transactions on Electron Devices ·Rachel Fowler, 锦梁, Isabela RAMADANTY, P. Ribot, J. A. Chroboczek, D. Dutartre, D. Gloria, Felipe Correa Pedro, P. Llinarès, M. Marty, 강우일 베드로, 胡良荣, R. Pantel, R Astiningsih, P M Harnet, J.L. Regolini, G. Vincent, A. Chantre	1999	41
18	Low frequency 1/f noise characterization of advanced CMOS-compatible bipolar junction transistors for technology evaluation European Solid-State Device Research Conference ·P. Llinarès, Gongbing Guo, Felipe Correa Pedro, G. Ghibaudo, J. A. Chroboczek	1997	4
19	Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs Microelectronics Reliability ·P. Llinarès, Gongbing Guo, G. Ghibaudo, L. Vendrame, J. A. Chroboczek	1997	7
20	On noise sources in hot electron-degraded bipolar junction transistors Journal of Applied Physics ·P. Llinarès, G. Ghibaudo, J. A. Chroboczek	1997	17

About P. Llinarès

P. Llinarès is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Biomedical Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 27 papers that have together received 308 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (26 papers), Semiconductor materials and devices (20 papers), Radio Frequency Integrated Circuit Design (6 papers), Analog and Mixed-Signal Circuit Design (6 papers), Integrated Circuits and Semiconductor Failure Analysis (6 papers), Electrostatic Discharge in Electronics (5 papers), VLSI and Analog Circuit Testing (3 papers) and Low-power high-performance VLSI design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (307 citations), Hardware and Architecture (14 citations), Biomedical Engineering (60 citations), Atomic and Molecular Physics, and Optics (31 citations) and Structural Biology (1 citation). P. Llinarès has collaborated with scholars based in France, Switzerland and Canada. Frequent co-authors include G. Ghibaudo, J. A. Chroboczek, J.C. Vildeuil, M. Marin, M. de Murcia, M. Jamal Deen, Éric Granger, D. Céli, A. Chantre and G. Vincent. Their work appears in journals such as Solid-State Electronics, Microelectronics Reliability, Journal of Applied Physics, IEICE Transactions on Electronics and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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