O. Noblanc

1.2k citations

39 papers · 922 indexed · h-index 15

Impact in

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Microwave Dielectric Ceramics Synthesis
- Advancements in Semiconductor Devices and Circuit Design
Atomic and Molecular Physics, and Optics top 10%
- Semiconductor materials and interfaces

Papers in

Electrical and Electronic Engineering 37
- Silicon Carbide Semiconductor Technologies 29
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 7
- Radio Frequency Integrated Circuit Design 5
- Electromagnetic Compatibility and Noise Suppression 4
Atomic and Molecular Physics, and Optics 15
- Semiconductor materials and interfaces 15

Co-authors: P. Gaucher G. Calvarin C. Brylinski C. Arnodo Christian Brylinski F. Meyer S. Cassette E. Chartier
Journals: IEEE Transactions on Electron Devices (4 papers)Materials Science and Engineering B (3 papers)Applied Surface Science (2 papers)Thin Solid Films (2 papers)Diamond and Related Materials (2 papers)
Partner nations: France Bulgaria United Kingdom

In The Last Decade

O. Noblanc

37 papers receiving 861 citations

Peers

Countries citing papers authored by O. Noblanc

Since Specialization

Citations

This map shows the geographic impact of O. Noblanc's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Noblanc with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Noblanc more than expected).

Fields of papers citing papers by O. Noblanc

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Noblanc. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Noblanc. The network helps show where O. Noblanc may publish in the future.

Co-authors

The 25 scholars most cited alongside O. Noblanc, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with O. Noblanc Line = papers co-authored together O. Noblanc links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	High voltage devices in advanced CMOS technologies R.A. Bianchi, C. Raynaud, 三博中島, F. Monsieur, O. Noblanc	2009	19
2	High voltage devices integration into advanced CMOS technologies R.A. Bianchi, F. Monsieur, 三博中島, C. Raynaud, O. Noblanc	2008	22
3	High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- BiCMOS Process for RF-Power Applications IEEE Transactions on Electron Devices ·M. Roca, Alexandre Giry, 董建斌, Mary Amanda Spivak, 三博中島, Bertrand Szelag, T. G. Kremer, Raphaël Sommet, 克己鳥越, O. Noblanc	2007	32
4	Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits P. Chevalier, D. Gloria, P. Scheer, Sébastien Pruvost, Frédéric Gianesello, Gordon Gz Fan, P. Garcia, J.C. Vildeuil, A. Chantre, Catherine Garnier, O. Noblanc, Sorin P. Voinigescu, Timothy O. Dickson, E. Laskin, Sean T. Nicolson, T. Chalvatzis, K.H.K. Yau	2006	17
5	Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Materials science forum ·M. Gassoumi, N. Sghaier, J. Wang, Chih‐Cheng Fu, H. Mâaref, Jean‐Marie Bluet, Gérard Guillot, E. Morvan, O. Noblanc, C. Dua, Christian Brylinski	2004	2
6	Evidence of surface states for 4H-SiC MESFETs on semi-insulating substrates by current transient spectroscopy M. Gassoumi, J. Wang, Chih‐Cheng Fu, N. Sghaier, H. Mâaref, Jean‐Marie Bluet, G. Guillot, E. Morvan, O. Noblanc, C. Dua, Christian Brylinski	2004	4
7	Microwave characterisation and modelling of silicon carbide power MESFETS: towards a nonlinear model IEE Proceedings - Microwaves Antennas and Propagation ·Luiz Carlos Gomes Sacramento, Luiz Carlos Gomes Sacramento, T. Ouisse, B. Cabon, 缪文俊, O. Noblanc, C. Dua	2003	1
8	Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage Materials science forum ·Liliane Aparecida, Luiz Carlos Gomes Sacramento, T. Ouisse, Edwige Bano, O. Noblanc, Christian Brylinski	2001	1
9	Influence of Interface States on Output Characteristics of 4H-SiC MESFETs on Semi–Insulating Substrates MRS Proceedings ·N. Sghaier, A. Souifi, Jean‐Marie Bluet, H. Jammes, Gérard Guillot, O. Noblanc, C. Brylinski	2000	4
10	4H-SiC MESFETs behavior after high dose irradiation IEEE Transactions on Nuclear Science ·Todd Gutowski, O. Noblanc, Niu Jun-fang, F. Joffre, C. Brylinski	2000	12
11	Interface chemistry of WN/4H–SiC structures Applied Surface Science ·A. Kakanakova‐Georgieva, Vladimir I. Sklyanov, Ts. Marinova, Roumen Kakanakov, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski	1999	12
12	A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V), pulsed S-parameter measurements IEEE Transactions on Electron Devices ·L Pytkowska, O. Noblanc, A.V. Maltsev, E. Chartier, Christian Brylinski, Julia Winkler	1999	13
13	Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC Semiconductor Science and Technology ·Vladimir I. Sklyanov, A. Kakanakova‐Georgieva, Roumen Kakanakov, Ts. Marinova, Àrea d'Urbanisme, Infraestructures, Habitatge, Medi Ambient i Sistemes d'Informació i Telecomunicacions, U. P. India, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski	1998	7
14	Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers Materials science forum ·O. Noblanc, C Kisrákói, E. Chartier, Christian Brylinski	1998	9
15	Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC Materials science forum ·O. Noblanc, C Kisrákói, S. Cassette, C. Brylinski, A. Kakanakova‐Georgieva, Ts. Marinova, Vladimir I. Sklyanov, Shadid Gp, B. Pécz, Attila Sulyok, G. Radnóczi	1998	5
16	Nickel based ohmic contacts on SiC Materials Science and Engineering B ·Ts. Marinova, A. Kakanakova‐Georgieva, V. Krastev, Roumen Kakanakov, Zhong Junwe, Vladimir I. Sklyanov, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski, B. Pécz, G. Radnóczi, Elizabeth Downing	1997	99
17	Microwave power MESFET on 4H-SiC Diamond and Related Materials ·O. Noblanc, E. Chartier, C. Arnodo, C. Brylinski	1997	14
18	Structural and dielectric studies of Pb(Mg1/3Nb2/3)O3–PbTiO3 ferroelectric solid solutions around the morphotropic boundary Journal of Applied Physics ·O. Noblanc, P. Gaucher, G. Calvarin	1996	222
19	PMN-PT ceramics for active vibration control Ferroelectrics ·O. Noblanc, P. Gaucher	1996	3
20	Influence of domain walls on piezoelectric and electrostrictive properties of PMN-PT (65/35) ceramics Ferroelectrics ·O. Noblanc, P. Gaucher	1994	7

About O. Noblanc

O. Noblanc is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Mechanical Engineering and Mechanics of Materials, having authored 39 papers that have together received 922 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (29 papers), Semiconductor materials and devices (16 papers), Semiconductor materials and interfaces (15 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers), Radio Frequency Integrated Circuit Design (5 papers), Ferroelectric and Piezoelectric Materials (4 papers), Electromagnetic Compatibility and Noise Suppression (4 papers) and Aluminum Alloys Composites Properties (4 papers). The work is most often cited by research in Electrical and Electronic Engineering (799 citations), Atomic and Molecular Physics, and Optics (378 citations), Electronic, Optical and Magnetic Materials (154 citations), Condensed Matter Physics (86 citations) and Materials Chemistry (290 citations). O. Noblanc has collaborated with scholars based in France, Bulgaria and United Kingdom. Frequent co-authors include P. Gaucher, G. Calvarin, C. Brylinski, C. Arnodo, Christian Brylinski, F. Meyer, S. Cassette, E. Chartier, A. Kakanakova‐Georgieva and V. Aubry-Fortuna. Their work appears in journals such as IEEE Transactions on Electron Devices, Materials Science and Engineering B, Applied Surface Science, Thin Solid Films and Diamond and Related Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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