P. Ribot

587 total citations
18 papers, 419 citations indexed

About

P. Ribot is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, P. Ribot has authored 18 papers receiving a total of 419 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 1 paper in Computational Mechanics. Recurrent topics in P. Ribot's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). P. Ribot is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (15 papers) and Integrated Circuits and Semiconductor Failure Analysis (7 papers). P. Ribot collaborates with scholars based in France, Italy and Poland. P. Ribot's co-authors include D. Dutartre, T. Skotnicki, S. Monfray, M. Paoli, M. Jurczak, J.L. Regolini, R. Pantel, Jorge Martins, D. Lenoble and R. Gwoziecki and has published in prestigious journals such as IEEE Transactions on Electron Devices, Thin Solid Films and Materials Science and Engineering B.

In The Last Decade

P. Ribot

18 papers receiving 389 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P. Ribot France	7	412	69	48	15	7	18	419
H. van Meer Belgium	10	444 1.1×	54 0.8×	61 1.3×	18 1.2×	3 0.4×	41	452
M. Paoli France	8	404 1.0×	80 1.2×	28 0.6×	23 1.5×	5 0.7×	17	416
H. Takashima Japan	10	329 0.8×	57 0.8×	24 0.5×	14 0.9×	5 0.7×	16	339
J.M. Sung United States	8	308 0.7×	31 0.4×	42 0.9×	47 3.1×	6 0.9×	21	308
R. Schreutelkamp Belgium	10	257 0.6×	51 0.7×	39 0.8×	41 2.7×	6 0.9×	31	276
B. Dumont France	5	187 0.5×	34 0.5×	55 1.1×	13 0.9×	11 1.6×	15	196
M.R. Polcari United States	12	459 1.1×	42 0.6×	72 1.5×	16 1.1×	6 0.9×	22	468
Shiying Xiong United States	5	419 1.0×	65 0.9×	30 0.6×	23 1.5×	6 0.9×	5	435
Greg Leung United States	8	387 0.9×	71 1.0×	22 0.5×	9 0.6×	3 0.4×	13	395
Chulchae Choi United States	6	342 0.8×	102 1.5×	54 1.1×	10 0.7×	17 2.4×	11	353

Countries citing papers authored by P. Ribot

Since Specialization

Citations

This map shows the geographic impact of P. Ribot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Ribot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Ribot more than expected).

Fields of papers citing papers by P. Ribot

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Ribot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Ribot. The network helps show where P. Ribot may publish in the future.

Co-authorship network of co-authors of P. Ribot

This figure shows the co-authorship network connecting the top 25 collaborators of P. Ribot. A scholar is included among the top collaborators of P. Ribot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Ribot. P. Ribot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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18 of 18 papers shown

Monfray, S., T. Skotnicki, Y. Morand, et al.. (2003). 50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process. 108–109. 39 indexed citations

Skotnicki, T., R. Gwoziecki, D. Lenoble, et al.. (2003). Heavily doped and extremely shallow junctions on insulator by SONCTION (SilicON Cut-off juncTION) process. 513–516. 4 indexed citations

Tavel, B., F. Monsieur, P. Ribot, & T. Skotnicki. (2002). Investigations on Poly-SiGe Gate in Full 0.1um CMOS Integration. 127–130. 2 indexed citations

Josse, E., T. Skotnicki, M. Jurczak, et al.. (2002). High performance 40 nm vertical MOSFET within a conventional CMOS process flow. 55–56. 4 indexed citations

Ribot, P. & D. Dutartre. (2002). Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD. Materials Science and Engineering B. 89(1-3). 306–309. 7 indexed citations

Monfray, S., T. Skotnicki, Y. Morand, et al.. (2002). First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance. 29.7.1–29.7.4. 35 indexed citations

Bœuf, F., T. Skotnicki, S. Monfray, et al.. (2002). 16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation. 29.5.1–29.5.4. 46 indexed citations

Ribot, P., S. Monfray, T. Skotnicki, & D. Dutartre. (2002). Selective SiGe epitaxy by rtcvd for new device architectures. Materials Science and Engineering B. 89(1-3). 125–128. 6 indexed citations

Monfray, S., C. Julien, P. Ribot, et al.. (2001). Optimized Si/SiGe notched gates for CMOS. 275–278. 1 indexed citations

10.

Lenoble, D., et al.. (2001). Suppression of boron transient-enhanced diffusion in SiGe HBTs by a buried carbon layer. IEEE Transactions on Electron Devices. 48(8). 1765–1769. 1 indexed citations

11.

Jurczak, M., T. Skotnicki, R. Gwoziecki, et al.. (2001). Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices. IEEE Transactions on Electron Devices. 48(8). 1770–1775. 64 indexed citations

12.

Dutartre, D., D. Lenoble, M. Marty, et al.. (2000). Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTs. 556–559. 3 indexed citations

13.

Jurczak, M., T. Skotnicki, S. Monfray, et al.. (2000). Dielectric pockets  a new concept of the junctions for deca-nanometric CMOS devices. 536–539. 5 indexed citations

14.

Jurczak, M., T. Skotnicki, M. Paoli, et al.. (2000). Silicon-on-Nothing (SON)-an innovative process for advanced CMOS. IEEE Transactions on Electron Devices. 47(11). 2179–2187. 147 indexed citations

15.

Ferrieu, F., P. Ribot, & J.L. Regolini. (2000). Spectroscopic ellipsometry of SixGe1−x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry. Thin Solid Films. 373(1-2). 211–215. 4 indexed citations

16.

Ribot, P., et al.. (1999). Process stability of SiGe heterostructures for BiCMOS applications. Journal de Physique IV (Proceedings). 9(PR8). Pr8–327. 4 indexed citations

17.

Ribot, P., J. A. Chroboczek, D. Dutartre, et al.. (1999). A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters. IEEE Transactions on Electron Devices. 46(7). 1525–1531. 41 indexed citations

18.

Regolini, J.L., et al.. (1998). Epitaxial growth of SiGe layers for BiCMOS applications. Materials Science in Semiconductor Processing. 1(3-4). 317–323. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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