G. Vincent

2.7k total citations · 2 hit papers
48 papers, 2.2k citations indexed

About

G. Vincent is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Vincent has authored 48 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in G. Vincent's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Semiconductor materials and interfaces (11 papers). G. Vincent is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Semiconductor materials and interfaces (11 papers). G. Vincent collaborates with scholars based in France, United Kingdom and Switzerland. G. Vincent's co-authors include D. Bois, A. Chantre, P. A. Badoz, I. Sagnes, P. Pinard, A. Halimaoui, E. Rosencher, V. Mosser, F. Arnaud d’Avitaya and A. Nouailhat and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Vincent

48 papers receiving 2.0k citations

Hit Papers

align trajectories sort by overperformance

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electric field effect on the thermal emission of traps in semiconductor junctions

1979 438 citations G. Vincent, A. Chantre et al. Journal of Applied Physics profile →
Deep-level optical spectroscopy in GaAs

1981 372 citations A. Chantre, G. Vincent et al. Physical review. B, Condensed matter profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author						Papers	Cites
G. Vincent	1.7k	1.1k	734	382	234	48	2.2k
S. R. Johnson	1.9k 1.1×	1.7k 1.6×	793 1.1×	302 0.8×	216 0.9×	139	2.5k
Haruo Nagai	1.6k 0.9×	1.2k 1.1×	571 0.8×	185 0.5×	156 0.7×	94	1.9k
A. Chantre	3.0k 1.7×	1.2k 1.1×	401 0.5×	205 0.5×	231 1.0×	155	3.3k
C. R. Whitehouse	1.6k 0.9×	1.6k 1.5×	580 0.8×	214 0.6×	308 1.3×	119	2.2k
A. J. SpringThorpe	1.7k 1.0×	1.4k 1.3×	380 0.5×	249 0.7×	191 0.8×	134	2.0k
E. Finkman	1.9k 1.1×	1.6k 1.5×	824 1.1×	207 0.5×	263 1.1×	95	2.4k
D. Bois	1.5k 0.9×	1.1k 1.0×	502 0.7×	101 0.3×	303 1.3×	38	2.0k
Yoshiki Sakuma	1.5k 0.9×	1.5k 1.4×	1.0k 1.4×	392 1.0×	179 0.8×	152	2.4k
H. H. Wieder	1.9k 1.1×	1.8k 1.6×	933 1.3×	461 1.2×	313 1.3×	169	2.7k
R. Bhat	2.5k 1.4×	1.8k 1.7×	482 0.7×	389 1.0×	238 1.0×	64	2.9k

Countries citing papers authored by G. Vincent

Since Specialization

Citations

This map shows the geographic impact of G. Vincent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Vincent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Vincent more than expected).

Fields of papers citing papers by G. Vincent

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Vincent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Vincent. The network helps show where G. Vincent may publish in the future.

Co-authorship network of co-authors of G. Vincent

This figure shows the co-authorship network connecting the top 25 collaborators of G. Vincent. A scholar is included among the top collaborators of G. Vincent based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Vincent. G. Vincent is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Vincent, G.. (2006). All the physical and electrical parameters of the MOS transistor on a single graph (QΨ). The European Physical Journal Applied Physics. 34(1). 71–71. 1 indexed citations

Delille, D., R. Pantel, G. Vincent, & Éric Van Cappellen. (2002). Convergent beam electron diffraction extinction distance measurements for quantitative analysis of Si1−xGex. Ultramicroscopy. 93(1). 1–9. 2 indexed citations

Rozeau, O., C. Hernández, P. Llinarès, et al.. (2002). A 54 GHz f/sub max/ implanted base 0.35 μm single-polysilicon bipolar technology. SPIRE - Sciences Po Institutional REpository. 807–810. 3 indexed citations

Campidelli, Y., M. Marty, D. Dutartre, et al.. (2002). High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy. 52–55. 34 indexed citations

Dutartre, D., D. Lenoble, M. Marty, et al.. (2000). Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTs. 556–559. 3 indexed citations

Hernández, C., R. Pantel, I. Sagnes, et al.. (1997). An investigation of polysilicon emitter bipolar transistors with an ozonized polysilicon/monosilicon interface. European Solid-State Device Research Conference. 416–419. 1 indexed citations

Grouillet, A., et al.. (1996). Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors. European Solid-State Device Research Conference. 799–802. 1 indexed citations

Ashburn, P., M.R. Hashim, A. Chantre, et al.. (1996). Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases. IEEE Transactions on Electron Devices. 43(5). 774–783. 15 indexed citations

Vincent, G.. (1994). Optical properties of porous silicon superlattices. Applied Physics Letters. 64(18). 2367–2369. 169 indexed citations

10.

Gruhle, A., P. A. Badoz, Florian Chevalier, et al.. (1991). Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz. Microelectronic Engineering. 15(1-4). 27–30. 4 indexed citations

11.

Almaggoussi, A., Jean Emmanuel Sicart, Jean-Lοuis Robert, & G. Vincent. (1991). Conduction and scattering mechanisms in potential modulated inversion layers. Journal of Applied Physics. 69(3). 1463–1468. 1 indexed citations

12.

Vincent, G., et al.. (1989). Si permeable-base transistor realization using a MOS-compatible technology. IEEE Electron Device Letters. 10(12). 550–552. 7 indexed citations

13.

Glastre, G., E. Rosencher, F. Arnaud d’Avitaya, et al.. (1988). CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor. Applied Physics Letters. 52(11). 898–900. 15 indexed citations

14.

Glastre, G., et al.. (1987). Submicron PMMA/W/SiO2 lithography for Si localized epitaxy. Microelectronic Engineering. 7(1). 1–10. 2 indexed citations

15.

Rosencher, E., et al.. (1986). Si/CoSi ₂ /Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi ₂ grating. Electronics Letters. 22(13). 699–700. 18 indexed citations

16.

Vincent, G., et al.. (1982). Quenching effect of luminescence in bulk semi-insulating GaAs. Solid State Communications. 42(1). 67–69. 52 indexed citations

17.

Chantre, A., G. Vincent, & D. Bois. (1981). Deep-level optical spectroscopy in GaAs. Physical review. B, Condensed matter. 23(10). 5335–5359. 372 indexed citations breakdown →

18.

Vincent, G.. (1980). Deep level study by analysis of thermal and optical transients in semiconductor junctions. Applied Physics A. 23(2). 215–221. 12 indexed citations

19.

Balland, B., et al.. (1979). Donor-levels analysis in GaAlAs double heterostructure. Applied Physics Letters. 34(1). 108–110. 22 indexed citations

20.

Bois, D. & G. Vincent. (1977). Mise en évidence d'un état métastable du centre associé à l'oxygène dans GaAs. Journal de Physique Lettres. 38(17). 351–353. 33 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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