G. Vincent

2.7k total citations · 2 hit papers
48 papers, 2.2k citations indexed

About

G. Vincent is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Vincent has authored 48 papers receiving a total of 2.2k indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in G. Vincent's work include Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Semiconductor materials and interfaces (11 papers). G. Vincent is often cited by papers focused on Semiconductor materials and devices (27 papers), Advancements in Semiconductor Devices and Circuit Design (23 papers) and Semiconductor materials and interfaces (11 papers). G. Vincent collaborates with scholars based in France, United Kingdom and Switzerland. G. Vincent's co-authors include D. Bois, A. Chantre, P. A. Badoz, I. Sagnes, P. Pinard, A. Halimaoui, E. Rosencher, V. Mosser, G. Guillot and A. Nouailhat and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

G. Vincent

48 papers receiving 2.0k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Electric field effect on the thermal emission of traps in semiconductor junctions

1979 438 citations G. Vincent, A. Chantre et al. Journal of Applied Physics profile →
Deep-level optical spectroscopy in GaAs

1981 372 citations A. Chantre, G. Vincent et al. Physical review. B, Condensed matter profile →

Peers

Countries citing papers authored by G. Vincent

Since Specialization

Citations

This map shows the geographic impact of G. Vincent's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Vincent with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Vincent more than expected).

Fields of papers citing papers by G. Vincent

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Vincent. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Vincent. The network helps show where G. Vincent may publish in the future.

Co-authorship network of co-authors of G. Vincent

This figure shows the co-authorship network connecting the top 25 collaborators of G. Vincent. A scholar is included among the top collaborators of G. Vincent based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Vincent. G. Vincent is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	All the physical and electrical parameters of the MOS transistor on a single graph (QΨ) 2006 ·The European Physical Journal Applied Physics ·G. Vincent	1
2	Convergent beam electron diffraction extinction distance measurements for quantitative analysis of Si1−xGex 2002 ·Ultramicroscopy ·D. Delille, R. Pantel, G. Vincent, Éric Van Cappellen	2
3	High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy 2002 ·(unknown), (unknown), (unknown), (unknown), Y. Campidelli, (unknown), M. Marty, (unknown), (unknown), (unknown), D. Dutartre, D. Bensahel, G. Vincent, A. Chantre	34
4	An investigation of polysilicon emitter bipolar transistors with an ozonized polysilicon/monosilicon interface 1997 ·European Solid-State Device Research Conference ·(unknown), C. Hernández, R. Pantel, I. Sagnes, Marina Berenguer, (unknown), (unknown), A. Chantre, G. Vincent	1
5	Large - Angle - Tilt - Implanted - Base (LATIB) for Walled - Emitter Bipolar Transistors 1996 ·European Solid-State Device Research Conference ·(unknown), (unknown), (unknown), A. Grouillet, (unknown), A. Chantre, G. Vincent	1
6	Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases 1996 ·IEEE Transactions on Electron Devices ·P. Ashburn, (unknown), M.R. Hashim, A. Chantre, M. Mouis, G.J. Parker, G. Vincent	15
7	Optical properties of porous silicon superlattices 1994 ·Applied Physics Letters ·G. Vincent	169
8	Silicon etched-groove permeable base transistor fabrication with cutoff frequencies (fT, fmax) above 25 GHz 1991 ·Microelectronic Engineering ·A. Gruhle, P. A. Badoz, Florian Chevalier, A. Halimaoui, (unknown), M. Mouis, J.L. Regolini, G. Vincent, D. Bensahel	4
9	Conduction and scattering mechanisms in potential modulated inversion layers 1991 ·Journal of Applied Physics ·A. Almaggoussi, Jean Emmanuel Sicart, Jean-Lοuis Robert, G. Vincent	1
10	Si permeable-base transistor realization using a MOS-compatible technology 1989 ·IEEE Electron Device Letters ·(unknown), G. Vincent, P. Perret, P. A. Badoz, E. Rosencher	7
11	CoSi2 and Si epitaxial growth in 〈111〉 Si submicron lines with application to a permeable base transistor 1988 ·Applied Physics Letters ·G. Glastre, E. Rosencher, F. Arnaud d’Avitaya, (unknown), M. Pons, G. Vincent, J. C. Pfister	15
12	Submicron PMMA/W/SiO2 lithography for Si localized epitaxy 1987 ·Microelectronic Engineering ·G. Glastre, G. Vincent, A. Vareille, (unknown), (unknown), E. Rosencher	2
13	Si/CoSi ₂ /Si permeable base transistor obtained by silicon molecular beam epitaxy over a CoSi ₂ grating 1986 ·Electronics Letters ·E. Rosencher, G. Glastre, G. Vincent, (unknown), F. Arnaud d’Avitaya	18
14	Transient-current study of field-assisted emission from shallow levels in silicon 1984 ·Physical review. B, Condensed matter ·E. Rosencher, V. Mosser, G. Vincent	57
15	Ionization transients of shallow levels in silicon space charge layer at low temperature 1983 ·Solid State Communications ·E. Rosencher, V. Mosser, G. Vincent	11
16	Quenching effect of luminescence in bulk semi-insulating GaAs 1982 ·Solid State Communications ·(unknown), G. Vincent, A. Nouailhat, G. Guillot	52
17	Deep-level optical spectroscopy in GaAs breakdown → 1981 ·Physical review. B, Condensed matter ·A. Chantre, G. Vincent, D. Bois	372
18	Deep level study by analysis of thermal and optical transients in semiconductor junctions 1980 ·Applied Physics A ·G. Vincent	12
19	Donor-levels analysis in GaAlAs double heterostructure 1979 ·Applied Physics Letters ·B. Balland, G. Vincent, D. Bois, (unknown)	22
20	Mise en évidence d'un état métastable du centre associé à l'oxygène dans GaAs 1977 ·Journal de Physique Lettres ·D. Bois, G. Vincent	33

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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