F. Pascal

720 total citations
51 papers, 520 citations indexed

About

F. Pascal is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F. Pascal has authored 51 papers receiving a total of 520 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in F. Pascal's work include Advancements in Semiconductor Devices and Circuit Design (25 papers), Radio Frequency Integrated Circuit Design (18 papers) and Semiconductor materials and devices (16 papers). F. Pascal is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (25 papers), Radio Frequency Integrated Circuit Design (18 papers) and Semiconductor materials and devices (16 papers). F. Pascal collaborates with scholars based in France, Canada and Netherlands. F. Pascal's co-authors include M. Jamal Deen, G. Bougnot, J. Bougnot, Philippe Grosse, A. Hoffmann, G. Rostoker, S. L. Rumyantsev, Steven L. Bernasek, Manuel P. Soriaga and A. Pénarier and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

F. Pascal

50 papers receiving 500 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Pascal France 12 415 199 95 89 40 51 520
C. Ito United States 12 381 0.9× 254 1.3× 51 0.5× 24 0.3× 61 1.5× 47 446
A. Satrapinski Finland 10 287 0.7× 113 0.6× 160 1.7× 109 1.2× 36 0.9× 39 380
Michał Zaborowski Poland 9 183 0.4× 87 0.4× 38 0.4× 99 1.1× 6 0.1× 54 304
Lalani K. Werake United States 9 174 0.4× 236 1.2× 145 1.5× 100 1.1× 25 0.6× 11 388
Stanislav A. Dogel Canada 7 267 0.6× 247 1.2× 95 1.0× 95 1.1× 9 0.2× 20 362
D. Corso Italy 12 267 0.6× 49 0.2× 125 1.3× 82 0.9× 22 0.6× 42 416
P. Andreakou United Kingdom 10 188 0.5× 196 1.0× 167 1.8× 59 0.7× 24 0.6× 19 356
N. T. Yeh Taiwan 11 361 0.9× 414 2.1× 218 2.3× 36 0.4× 24 0.6× 20 477
K.P. Roenker United States 14 391 0.9× 256 1.3× 43 0.5× 92 1.0× 38 0.9× 61 482
Jochen Scharpf Germany 14 172 0.4× 105 0.5× 327 3.4× 45 0.5× 14 0.3× 24 407

Countries citing papers authored by F. Pascal

Since Specialization
Citations

This map shows the geographic impact of F. Pascal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Pascal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Pascal more than expected).

Fields of papers citing papers by F. Pascal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Pascal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Pascal. The network helps show where F. Pascal may publish in the future.

Co-authorship network of co-authors of F. Pascal

This figure shows the co-authorship network connecting the top 25 collaborators of F. Pascal. A scholar is included among the top collaborators of F. Pascal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Pascal. F. Pascal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
3.
Pascal, F., et al.. (2009). I–V and low frequency noise characterization of poly and amorphous silicon Ti- and Co-salicide resistors. Thin Solid Films. 518(9). 2497–2500. 1 indexed citations
4.
Pascal, F., et al.. (2008). Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors. Journal of Applied Physics. 103(11). 7 indexed citations
5.
Hoffmann, A., et al.. (2007). 1 ∕ f noise and percolation in carbon nanotube random networks. Applied Physics Letters. 90(8). 37 indexed citations
6.
Pénarier, A., et al.. (2002). Low-frequency noise in III–V high-speed devices. IEE Proceedings - Circuits Devices and Systems. 149(1). 59–67. 7 indexed citations
7.
Pénarier, A., et al.. (2000). Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT. Microelectronics Reliability. 40(11). 1869–1874. 8 indexed citations
8.
Levinshteĭn, M. E., F. Pascal, Sylvie Contreras, et al.. (1998). Low-frequency noise in GaN/GaAlN heterojunctions. Applied Physics Letters. 72(23). 3053–3055. 33 indexed citations
9.
Dyakonova, N., M. E. Levinshteĭn, S. L. Rumyantsev, & F. Pascal. (1997). 1/f noise in strongly doped n-type GaAs under band-band illumination conditions. Semiconductors. 31(7). 728–732. 5 indexed citations
10.
Podlecki, Jean, L. Gouskov, F. Pascal, F. Pascal‐Delannoy, & Alain Giani. (1996). Photodetection at 3.65 in the atmospheric window using heteroepitaxy. Semiconductor Science and Technology. 11(7). 1127–1130. 4 indexed citations
11.
Pascal, F., Christophe Dagot, Hervé Pingaud, et al.. (1995). Modeling of an industrial alcohol fermentation and simuiation of the plant by a process simulator. Biotechnology and Bioengineering. 46(3). 202–217. 11 indexed citations
12.
Pascal, F., et al.. (1994). Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures. IEEE Transactions on Electron Devices. 41(11). 2000–2005. 23 indexed citations
13.
Pascal, F., et al.. (1994). and g-r noise in AlGaAs epitaxial layers. Solid-State Electronics. 37(8). 1503–1508. 15 indexed citations
14.
Murcia, M. de, et al.. (1993). Excess noise in Al0.25Ga0.75As epitaxial layers. AIP conference proceedings. 285. 31–34. 2 indexed citations
15.
Pascal, F., et al.. (1993). Low-frequency noise measurements in GaAlAs/GaAs heterojunction bipolar transistors. AIP conference proceedings. 285. 296–299. 5 indexed citations
16.
Gouskov, L., et al.. (1990). Détermination de la résistance d'une couche sur substrat non isolant. Revue de Physique Appliquée. 25(6). 475–479. 2 indexed citations
18.
Bougnot, G., et al.. (1988). GaSb AND GaInAsSb PHOTODETECTORS FOR λ > 1.55 µm PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION. Le Journal de Physique Colloques. 49(C4). C4–333. 1 indexed citations
20.
Benziger, Jay B., F. Pascal, Steven L. Bernasek, Manuel P. Soriaga, & A. T. HUBBARD. (1986). Characterization of platinum electrodes by infrared spectroscopy. Journal of Electroanalytical Chemistry. 198(1). 65–80. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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