J.C. Vildeuil

473 citations

23 papers · 349 indexed · h-index 12

Impact in

Electrical and Electronic Engineering top 10%
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
- Radio Frequency Integrated Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Electrostatic Discharge in Electronics
Instrumentation

Papers in

Electrical and Electronic Engineering 23
- Advancements in Semiconductor Devices and Circuit Design 21
- Semiconductor materials and devices 15
- Integrated Circuits and Semiconductor Failure Analysis 9
- Low-power high-performance VLSI design 3
- CCD and CMOS Imaging Sensors 2
- Radio Frequency Integrated Circuit Design 2
Hardware and Architecture 2

Co-authors: M. Valenza C. Leyris A. Hoffmann F. Mart́ınez G. Ghibaudo P. Llinarès Emmanuel Vincent F. Roy
Journals: Microelectronics Reliability (6 papers)IEEE Electron Device Letters (1 paper)Microelectronic Engineering (1 paper)Solid-State Electronics (1 paper)Journal of Applied Physics (1 paper)
Partner nations: France Switzerland Canada

In The Last Decade

J.C. Vildeuil

22 papers receiving 339 citations

Peers

Countries citing papers authored by J.C. Vildeuil

Since Specialization

Citations

This map shows the geographic impact of J.C. Vildeuil's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.C. Vildeuil with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.C. Vildeuil more than expected).

Fields of papers citing papers by J.C. Vildeuil

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.C. Vildeuil. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.C. Vildeuil. The network helps show where J.C. Vildeuil may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J.C. Vildeuil, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J.C. Vildeuil Line = papers co-authored together J.C. Vildeuil links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization Microelectronics Reliability ·C. Leyris, F. Mart́ınez, M. Valenza, A. Hoffmann, J.C. Vildeuil	2007	2
2	Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements Microelectronics Reliability ·志内哲也, F. Mart́ınez, M. Valenza, J.C. Vildeuil, Emmanuel Vincent, F. Bœuf, Harriet Ngubane, Francisco Javier Iborra Femanía	2007	2
3	Response of Correlated Double Sampling CMOS Imager Circuit to Random Telegraph Signal Noise HAL (Le Centre pour la Communication Scientifique Directe) ·C. Leyris, J.C. Vildeuil, F. Roy, F. Mart́ınez, M. Valenza, A. Hoffmann	2006	15
4	Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits P. Chevalier, D. Gloria, P. Scheer, Sébastien Pruvost, Frédéric Gianesello, Gordon Gz Fan, P. Garcia, J.C. Vildeuil, A. Chantre, Catherine Garnier, O. Noblanc, Sorin P. Voinigescu, Timothy O. Dickson, E. Laskin, Sean T. Nicolson, T. Chalvatzis, K.H.K. Yau	2006	17
5	N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis Microelectronics Reliability ·C. Leyris, F. Mart́ınez, A. Hoffmann, M. Valenza, J.C. Vildeuil	2006	28
6	Study of bipolar transistor matching at high current level with various test configurations leading to a new model approach Steve Berggreen, R. Trozzo, Santamaría Rodríguez, J.C. Vildeuil, Yasmin Alfaki	2005	2
7	Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors Microelectronics Reliability ·NGUYEN Thien Chung, Ii Soo Ha, Jurijs Grigorjevs, F. Pascal, Antonio Velasco Lelja, J.C. Vildeuil, M. Marin, S Labhard, Elizaveta Andreevna Nefedova, Anmari Linardi	2005	2
8	Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements Microelectronic Engineering ·F. Mart́ınez, C. Leyris, 志内哲也, M. Valenza, A. Hoffmann, J.C. Vildeuil, Emmanuel Vincent, F. Bœuf, T. Skotnicki, M. Bidaud, D. Barge, 임소라	2005	19
9	Trap competition inducing R.T.S noise in saturation range in N-MOSFETs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·C. Leyris, A. Hoffmann, M. Valenza, J.C. Vildeuil, F. Roy	2005	13
10	Effects of body biasing on the low frequency noise of MOSFETs from a 130 nm CMOS technology IEE Proceedings - Circuits Devices and Systems ·M. Marin, M. Jamal Deen, M. de Murcia, P. Llinarès, J.C. Vildeuil	2004	21
11	A New Method for the Channel-Length Extraction in MOSFETs With Sub-2-nm Gate Oxide IEEE Electron Device Letters ·M. Marin, M. Jamal Deen, Kalil Riccardi Potenza, P. Llinarès, J.C. Vildeuil	2004	11
12	Low frequency noise characterization in 0.13 μm p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 μm technologies on 1/f noise Microelectronics Reliability ·M. Marin, Bermúdez Leguizamón, M. de Murcia, P. Llinarès, J.C. Vildeuil	2004	16
13	Impact of grain number fluctuations in the MOS transistor gate on matching performance Santamaría Rodríguez, J.C. Vildeuil, P. Llinarès, G. Ghibaudo	2003	20
14	CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure J.C. Vildeuil, M. Valenza, D. Rigaud	2003	1
15	Transient radiation effects in CMOS/SOI transistors and circuits V. Ferlet-Cavrois, Bruno Glaser, J.C. Vildeuil, O. Musseau, J.L. Leray	2002	5
16	1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology Solid-State Electronics ·Bermúdez Leguizamón, M. de Murcia, J.C. Vildeuil, M. Valenza, P. Llinarès, Elizaveta Andreevna Nefedova	2002	9
17	Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors Journal of Applied Physics ·M. Valenza, J.C. Vildeuil, D. Rigaud	2002	0
18	Low-frequency noise in III–V high-speed devices IEE Proceedings - Circuits Devices and Systems ·A. Pénarier, J.C. Vildeuil, Nguyễn Lê Hoài Lĩnh, D. Rigaud, 马金禄, Jurijs Grigorjevs, F. Pascal	2002	7
19	Low frequency noise in gate and drain of PHEMT’s and related correlation Microelectronics Reliability ·J.C. Vildeuil, M. Valenza, D. Rigaud	2000	3
20	Extraction of the BSIM3 1/f noise parameters in CMOS transistors Microelectronics Journal ·J.C. Vildeuil, M. Valenza, D. Rigaud	1999	11

About J.C. Vildeuil

J.C. Vildeuil is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Biomedical Engineering and Infectious Diseases, having authored 23 papers that have together received 349 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (21 papers), Semiconductor materials and devices (15 papers), Integrated Circuits and Semiconductor Failure Analysis (9 papers), Semiconductor Quantum Structures and Devices (3 papers), Low-power high-performance VLSI design (3 papers), Analog and Mixed-Signal Circuit Design (3 papers), CCD and CMOS Imaging Sensors (2 papers) and Radio Frequency Integrated Circuit Design (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (343 citations), Instrumentation (13 citations), Media Technology (18 citations), Acoustics and Ultrasonics (1 citation) and Biomedical Engineering (43 citations). J.C. Vildeuil has collaborated with scholars based in France, Switzerland and Canada. Frequent co-authors include M. Valenza, C. Leyris, A. Hoffmann, F. Mart́ınez, G. Ghibaudo, P. Llinarès, Emmanuel Vincent, F. Roy, F. Monsieur and S. Bruyère. Their work appears in journals such as Microelectronics Reliability, IEEE Electron Device Letters, Microelectronic Engineering, Solid-State Electronics and Journal of Applied Physics.

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