D. Céli

771 total citations
38 papers, 309 citations indexed

About

D. Céli is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, D. Céli has authored 38 papers receiving a total of 309 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 5 papers in Biomedical Engineering. Recurrent topics in D. Céli's work include Advancements in Semiconductor Devices and Circuit Design (23 papers), Radio Frequency Integrated Circuit Design (20 papers) and Silicon Carbide Semiconductor Technologies (10 papers). D. Céli is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (23 papers), Radio Frequency Integrated Circuit Design (20 papers) and Silicon Carbide Semiconductor Technologies (10 papers). D. Céli collaborates with scholars based in France, Germany and Switzerland. D. Céli's co-authors include P. Chevalier, N. Derrier, Andrej Rumiantsev, M. Schröter, A. Chantre, Sorin P. Voinigescu, Ioannis Sarkas, G. Ghibaudo, Eric Dacquay and Andreea Balteanu and has published in prestigious journals such as Journal of Applied Physics, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

D. Céli

36 papers receiving 301 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Céli France	9	302	39	28	12	9	38	309
Curtis M. Grens United States	11	315 1.0×	29 0.7×	24 0.9×	8 0.7×	9 1.0×	24	323
Adilson S. Cardoso United States	12	304 1.0×	39 1.0×	19 0.7×	14 1.2×	8 0.9×	31	316
G. Avenier France	9	229 0.8×	56 1.4×	15 0.5×	12 1.0×	7 0.8×	23	236
W. Liebl Germany	9	365 1.2×	49 1.3×	39 1.4×	18 1.5×	7 0.8×	12	372
Yi-Cheng Wu United States	11	295 1.0×	17 0.4×	43 1.5×	12 1.0×	13 1.4×	30	307
M.C. Maliepaard Canada	8	432 1.4×	39 1.0×	92 3.3×	13 1.1×	9 1.0×	13	434
John Chern Taiwan	9	387 1.3×	30 0.8×	45 1.6×	11 0.9×	2 0.2×	15	388
Kurt A. Moen United States	12	364 1.2×	41 1.1×	28 1.0×	3 0.3×	8 0.9×	36	376
M. Rest Germany	8	282 0.9×	29 0.7×	44 1.6×	13 1.1×	3 0.3×	16	295
Eric Dacquay Canada	11	454 1.5×	41 1.1×	48 1.7×	48 4.0×	5 0.6×	13	459

Countries citing papers authored by D. Céli

Since Specialization

Citations

This map shows the geographic impact of D. Céli's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Céli with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Céli more than expected).

Fields of papers citing papers by D. Céli

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Céli. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Céli. The network helps show where D. Céli may publish in the future.

Co-authorship network of co-authors of D. Céli

This figure shows the co-authorship network connecting the top 25 collaborators of D. Céli. A scholar is included among the top collaborators of D. Céli based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Céli. D. Céli is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Céli, D., et al.. (2022). Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K. IEEE Microwave and Wireless Components Letters. 32(6). 696–699. 8 indexed citations

Pawlak, Andreas, et al.. (2020). HICUM/L2: Extensions over the last decade. 55. 1–4. 5 indexed citations

Mukherjee, C., Marc Fabert, Gunter Fischer, et al.. (2019). A physical and versatile aging compact model for hot carrier degradation in SiGe HBTs under dynamic operating conditions. Solid-State Electronics. 163. 107635–107635. 4 indexed citations

Kassem, Hussein, et al.. (2017). A two-step de-embedding method valid up to 110 GHz. 1–4. 1 indexed citations

Voinigescu, Sorin P., Eric Dacquay, Valerio Adinolfi, et al.. (2012). Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100–300-GHz Range. IEEE Transactions on Microwave Theory and Techniques. 60(12). 4024–4034. 31 indexed citations

Balteanu, Andreea, Ioannis Sarkas, Valerio Adinolfi, et al.. (2012). Characterization of a 400-GHz SiGe HBT technology for low-power D-Band transceiver applications. 9 indexed citations

Chevalier, P., José M. de la Rosa, N. Derrier, et al.. (2012). Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz. 1–4. 26 indexed citations

Pawlak, Andreas, et al.. (2011). HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors. 195–198. 8 indexed citations

Rumiantsev, Andrej, P. Sakalas, N. Derrier, D. Céli, & M. Schröter. (2011). Influence of probe tip calibration on measurement accuracy of small-signal parameters of advanced BiCMOS HBTs. 203–206. 12 indexed citations

10.

d’Alessandro, Vincenzo, D. Céli, A. Chantre, et al.. (2011). Experimental extraction of the base resistance of SiGe:C HBTs beyond BVCEO: An improved technique. 31. 187–190. 1 indexed citations

11.

Pawlak, Andreas, et al.. (2010). Modeling and parameter extraction of SiGe: C HBT's with HICUM for the emerging terahertz era. 25–28. 7 indexed citations

12.

Faure, Cyril, et al.. (2007). High accuracy temperature bipolar modeling for demanding Bandgap application. sc 20. 180–183. 2 indexed citations

13.

Céli, D., et al.. (2006). New test structures for extraction of base sheet resistance in BiCMOS technology. 35–40. 1 indexed citations

14.

Céli, D., et al.. (2005). A scalable substrate network for compact modelling of deep trench insulated HBT. Solid-State Electronics. 49(10). 1623–1631. 2 indexed citations

15.

Chevalier, P., Laurent Rubaldo, Sébastien Pruvost, et al.. (2005). 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. IEEE Journal of Solid-State Circuits. 40(10). 2025–2034. 49 indexed citations

16.

Céli, D.. (2005). Method For Accurate Determinaton Of The Intrinsic Cut-off Frequency of IC Bipolar Transistors. 200–203.

17.

Céli, D., et al.. (2002). Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]. 180–183. 6 indexed citations

18.

Roulston, D.J., et al.. (1996). Extraction of SPICE BJT model parameters in BIPOLE3 using optimization methods. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 15(11). 1332–1339. 5 indexed citations

19.

Céli, D., et al.. (1990). A 12V BICMOS technology for mixed analog-digital applications with high performance vertical pnp. 397–400. 1 indexed citations

20.

Roché, Michel, et al.. (1987). An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI. 507–510. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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