Craig Riddet

488 total citations
38 papers, 358 citations indexed

About

Craig Riddet is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Craig Riddet has authored 38 papers receiving a total of 358 indexed citations (citations by other indexed papers that have themselves been cited), including 38 papers in Electrical and Electronic Engineering, 8 papers in Biomedical Engineering and 2 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Craig Riddet's work include Advancements in Semiconductor Devices and Circuit Design (38 papers), Semiconductor materials and devices (38 papers) and Silicon Carbide Semiconductor Technologies (16 papers). Craig Riddet is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (38 papers), Semiconductor materials and devices (38 papers) and Silicon Carbide Semiconductor Technologies (16 papers). Craig Riddet collaborates with scholars based in United Kingdom, United States and Spain. Craig Riddet's co-authors include Asen Asenov, Craig Alexander, A. R. Brown, Scott Roy, B. Cheng, J.R. Watling, Gareth Roy, Xingsheng Wang, A. Martı́nez and Salvatore Amoroso and has published in prestigious journals such as Journal of Applied Physics, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

Craig Riddet

37 papers receiving 348 citations

Peers

Craig Riddet
Amit Jha United States
Gyu-Seob Jeong South Korea
H. Majima Japan
Andrew R. Brown United Kingdom
M. Sherony United States
J. Lacord France
K. Schruefer United States
Craig Riddet
Citations per year, relative to Craig Riddet Craig Riddet (= 1×) peers M.C. Maliepaard

Countries citing papers authored by Craig Riddet

Since Specialization
Citations

This map shows the geographic impact of Craig Riddet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Craig Riddet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Craig Riddet more than expected).

Fields of papers citing papers by Craig Riddet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Craig Riddet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Craig Riddet. The network helps show where Craig Riddet may publish in the future.

Co-authorship network of co-authors of Craig Riddet

This figure shows the co-authorship network connecting the top 25 collaborators of Craig Riddet. A scholar is included among the top collaborators of Craig Riddet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Craig Riddet. Craig Riddet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Moroz, Victor, Jamil Kawa, Xi–Wei Lin, et al.. (2021). Challenges in Design and Modeling of Cold CMOS HPC Technology. 107–110. 3 indexed citations
2.
Georgiev, Vihar, Muhammad Mirza, Fikru Adamu-Lema, et al.. (2017). Experimental and Simulation Study of Silicon Nanowire Transistors Using Heavily Doped Channels. IEEE Transactions on Nanotechnology. 16(5). 727–735. 16 indexed citations
3.
Cheng, B., Xingsheng Wang, Craig Riddet, et al.. (2016). Variability-aware TCAD based design-technology co-optimization platform for 7nm node nanowire and beyond. 1–2. 5 indexed citations
4.
Georgiev, Vihar, Toufik Sadi, Xingsheng Wang, et al.. (2016). Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 213–216. 8 indexed citations
5.
Georgiev, Vihar, et al.. (2016). Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 1–2. 3 indexed citations
6.
Wang, Xingsheng, Vihar Georgiev, Salvatore Amoroso, et al.. (2015). Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors. IEEE Transactions on Electron Devices. 62(10). 3229–3236. 20 indexed citations
7.
Sinha, Saurabh, L. Shifren, Vikas Chandra, et al.. (2015). Circuit design perspectives for Ge FinFET at 10nm and beyond. 57–60. 6 indexed citations
8.
Sampedro, C., Luca Donetti, F. Gámiz, et al.. (2014). 3D multi-subband ensemble Monte Carlo simulator of FinFETs and nanowire transistors. ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam). 21–24. 11 indexed citations
9.
Asenov, Asen, B. Cheng, Fikru Adamu-Lema, et al.. (2014). Predictive simulation of future CMOS technologies and their impact on circuits. 1–4. 3 indexed citations
10.
Asenov, A., et al.. (2013). Predicting future technology performance. 1–6. 8 indexed citations
11.
Riddet, Craig, et al.. (2013). Monte carlo simulation of the effect of interface roughness in Implant-Free Quantum-Well MOSFETs. 9. 113–116. 1 indexed citations
12.
Liao, Siyu, et al.. (2013). Impact of the statistical variability on 15nm III–V and Ge MOSFET based SRAM design. 133–136. 1 indexed citations
13.
Chan, Ka‐Hou, B. Benbakhti, Craig Riddet, J.R. Watling, & A. Asenov. (2011). Monte Carlo simulation of a 20 nm gate length implant free quantum well Ge pMOSFET with different lateral spacer width. 1–4. 1 indexed citations
14.
Benbakhti, B., Ka‐Hou Chan, K. Kálna, et al.. (2011). Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach. Solid-State Electronics. 63(1). 14–18. 3 indexed citations
15.
Watling, J.R., et al.. (2010). Simulation of hole-mobility in doped relaxed and strained Ge. Microelectronic Engineering. 88(4). 462–464. 1 indexed citations
16.
Watling, J.R., et al.. (2010). Simulation of hole-mobility in doped relaxed and strained Ge layers. Journal of Applied Physics. 108(9). 4 indexed citations
17.
Riddet, Craig, A. R. Brown, Scott Roy, & Asen Asenov. (2008). Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations. Journal of Computational Electronics. 7(3). 231–235. 11 indexed citations
18.
Riddet, Craig, A. R. Brown, Craig Alexander, et al.. (2007). 3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs. IEEE Transactions on Nanotechnology. 6(1). 48–55. 28 indexed citations
19.
Riddet, Craig, Alexander L. Brown, Craig Alexander, et al.. (2006). Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations. 34. 200–203. 1 indexed citations
20.
Riddet, Craig, et al.. (2004). Scattering from Body Thickness Fluctuations in Double Gate MOSFETs: An ab initio Monte Carlo Simulation Study. Journal of Computational Electronics. 3(3-4). 341–345. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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