L. Vendrame

425 total citations
35 papers, 294 citations indexed

About

L. Vendrame is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Biomedical Engineering. According to data from OpenAlex, L. Vendrame has authored 35 papers receiving a total of 294 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 10 papers in Hardware and Architecture and 5 papers in Biomedical Engineering. Recurrent topics in L. Vendrame's work include Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). L. Vendrame is often cited by papers focused on Semiconductor materials and devices (23 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Integrated Circuits and Semiconductor Failure Analysis (11 papers). L. Vendrame collaborates with scholars based in Italy, France and United States. L. Vendrame's co-authors include Enrico Zanoni, Paolo Pavan, C. Canali, G. Verzellesi, A. Neviani, A. Ghetti, S. Cova, Alessandro Bogliolo, R. J. Malik and Franco Zappa and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and IEEE Electron Device Letters.

In The Last Decade

L. Vendrame

34 papers receiving 277 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Vendrame Italy 12 277 62 33 28 15 35 294
M. Togashi Japan 11 341 1.2× 59 1.0× 24 0.7× 36 1.3× 22 1.5× 37 359
M. Kajita Japan 12 450 1.6× 117 1.9× 60 1.8× 93 3.3× 15 1.0× 30 464
Sen Lin United States 13 628 2.3× 150 2.4× 42 1.3× 45 1.6× 16 1.1× 21 640
G. Sialm Switzerland 11 527 1.9× 51 0.8× 23 0.7× 90 3.2× 18 1.2× 15 531
C. Kromer Switzerland 10 533 1.9× 48 0.8× 24 0.7× 94 3.4× 18 1.2× 18 537
Nandish Mehta United States 8 292 1.1× 81 1.3× 34 1.0× 47 1.7× 10 0.7× 26 307
Pong-Fei Lu United States 10 274 1.0× 57 0.9× 50 1.5× 12 0.4× 4 0.3× 23 296
Toshiyuki Tsutsumi Japan 10 395 1.4× 30 0.5× 78 2.4× 64 2.3× 11 0.7× 63 430
Renichi Yamada Japan 11 376 1.4× 71 1.1× 21 0.6× 9 0.3× 17 1.1× 32 406
H. Iizuka Japan 11 327 1.2× 58 0.9× 12 0.4× 22 0.8× 22 1.5× 27 343

Countries citing papers authored by L. Vendrame

Since Specialization
Citations

This map shows the geographic impact of L. Vendrame's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Vendrame with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Vendrame more than expected).

Fields of papers citing papers by L. Vendrame

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Vendrame. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Vendrame. The network helps show where L. Vendrame may publish in the future.

Co-authorship network of co-authors of L. Vendrame

This figure shows the co-authorship network connecting the top 25 collaborators of L. Vendrame. A scholar is included among the top collaborators of L. Vendrame based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Vendrame. L. Vendrame is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Covi, Erika, et al.. (2014). On-Wafer Analog Pulse Generator for Fast Characterization and Parametric Test of Resistive Switching Memories. IEEE Transactions on Semiconductor Manufacturing. 27(2). 134–150. 2 indexed citations
2.
Cathignol, Augustin, et al.. (2008). Spacing impact on MOSFET mismatch. 90–95. 5 indexed citations
3.
Vendrame, L., et al.. (2006). Crosstalk-Based Capacitance Measurements: Theory and Applications. IEEE Transactions on Semiconductor Manufacturing. 19(1). 67–77. 8 indexed citations
4.
Vendrame, L., et al.. (2005). New Applications of Cross-Talk-Based Capacitance Measurements. CINECA IRIS Institutional Research information system (University of Urbino). 1 indexed citations
5.
Ghetti, A., et al.. (2005). 3D Simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories. Solid-State Electronics. 49(11). 1805–1812. 19 indexed citations
6.
Bogliolo, Alessandro, et al.. (2005). A new test structure for measuring on-chip cross-coupling capacitances. CINECA IRIS Institutional Research information system (University of Urbino). 165–166. 3 indexed citations
7.
Brambilla, Angelo, et al.. (2003). Measurements and extractions of parasitic capacitances in ulsi layouts. IEEE Transactions on Electron Devices. 50(11). 2236–2247. 19 indexed citations
8.
Stellari, Franco, Franco Zappa, S. Cova, & L. Vendrame. (2003). Tools for non-invasive optical characterization of CMOS circuits. 487–490. 20 indexed citations
9.
Conti, Massimo, et al.. (2003). A new methodology for the statistical analysis of VLSI CMOS circuits and its application to flash memories. Università Politecnica delle Marche (Università Politecnica delle Marche). 5. V–89. 3 indexed citations
10.
Bogliolo, Alessandro, et al.. (2002). Charge-based on-chip measurement technique for the selective extraction of cross-coupling capacitances. CINECA IRIS Institutional Research information system (University of Urbino). 75–77. 12 indexed citations
11.
Neviani, A., et al.. (1997). Hot-carrier degradation and oxide charge build-up in self-aligned etched-polysilicon npn bipolar transistors. IEEE Transactions on Electron Devices. 44(11). 2059–2063. 7 indexed citations
12.
Llinarès, P., et al.. (1997). Retarding effect of surface base compensation on degradation of noise characteristics of BiCMOS BJTs. Microelectronics Reliability. 37(10-11). 1603–1606. 7 indexed citations
13.
Vendrame, L., et al.. (1996). Optimisation of a Link Base Implant for Reducing the Access Base Resistance of Single-Poly Quasi Self-Aligned Bipolar Transistors. European Solid-State Device Research Conference. 803–806. 1 indexed citations
14.
Verzellesi, G., Alessandra Fabbro, Paolo Pavan, et al.. (1996). SPICE modelling of impact ionisation effects in silicon bipolar transistors. IEE Proceedings - Circuits Devices and Systems. 143(1). 33–33. 2 indexed citations
15.
Vendrame, L., et al.. (1996). Reliability improvement of single-poly quasi self-aligned bicmos bjts using base surface arsenic compensation. Microelectronics Reliability. 36(11-12). 1827–1830. 1 indexed citations
16.
Zanoni, Enrico, Alessandra Fabbro, L. Vendrame, et al.. (1994). A Physics-Based, Accurate Spice Model of Impact-Ionization Effects in Bipolar Transistors. IRIS UNIMORE (University of Modena and Reggio Emilia). 181–184. 4 indexed citations
17.
Zanoni, Enrico, Gaudenzio Meneghesso, A. Neviani, et al.. (1994). A New Degradation Mechanism Induced by DX-Centers in AlGaAs/InGaAs PM-HEMT's. European Solid-State Device Research Conference. 539–542. 1 indexed citations
18.
Zanoni, Enrico, L. Vendrame, Paolo Pavan, et al.. (1993). Hot-electron electroluminescence in AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters. 62(4). 402–404. 12 indexed citations
19.
Verzellesi, G., G. Baccarani, C. Canali, et al.. (1993). Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor. IEEE Transactions on Electron Devices. 40(12). 2296–2300. 16 indexed citations
20.
Zanoni, Enrico, E.F. Crabbé, J.M.C. Stork, et al.. (1993). Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's. IEEE Electron Device Letters. 14(2). 69–71. 31 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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