Didier Bouvet

575 total citations
34 papers, 459 citations indexed

About

Didier Bouvet is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Didier Bouvet has authored 34 papers receiving a total of 459 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 11 papers in Biomedical Engineering and 10 papers in Materials Chemistry. Recurrent topics in Didier Bouvet's work include Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (10 papers). Didier Bouvet is often cited by papers focused on Semiconductor materials and devices (26 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Ferroelectric and Negative Capacitance Devices (10 papers). Didier Bouvet collaborates with scholars based in Switzerland, France and Spain. Didier Bouvet's co-authors include Adrian M. Ionescu, Giovanni A. Salvatore, Livio Lattanzio, Jean-Michel Sallèse, Luca De Michielis, N. Setter, Lucian Barbut, Farzan Jazaeri, Kirsten E. Moselund and V. Pott and has published in prestigious journals such as ACS Nano, Applied Physics Letters and IEEE Transactions on Electron Devices.

In The Last Decade

Didier Bouvet

33 papers receiving 433 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Didier Bouvet Switzerland 11 420 150 119 33 30 34 459
Oana Moldovan Spain 13 525 1.3× 83 0.6× 112 0.9× 52 1.6× 12 0.4× 29 559
Jaeman Jang South Korea 11 320 0.8× 87 0.6× 102 0.9× 18 0.5× 24 0.8× 30 357
J. De Blauwe Belgium 9 469 1.1× 42 0.3× 209 1.8× 56 1.7× 11 0.4× 17 492
Antonios Bazigos Switzerland 11 378 0.9× 104 0.7× 73 0.6× 81 2.5× 37 1.2× 39 411
Miin‐Horng Juang Taiwan 13 511 1.2× 111 0.7× 40 0.3× 28 0.8× 34 1.1× 82 525
Sk. Fahad Chowdhury United States 8 196 0.5× 128 0.9× 278 2.3× 44 1.3× 29 1.0× 10 325
V.K. Gueorguiev Bulgaria 11 303 0.7× 61 0.4× 130 1.1× 19 0.6× 47 1.6× 33 342
H. F�ll Germany 8 203 0.5× 174 1.2× 234 2.0× 54 1.6× 7 0.2× 10 296
H.F. Arrand United Kingdom 9 251 0.6× 246 1.6× 303 2.5× 79 2.4× 13 0.4× 13 335

Countries citing papers authored by Didier Bouvet

Since Specialization
Citations

This map shows the geographic impact of Didier Bouvet's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Didier Bouvet with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Didier Bouvet more than expected).

Fields of papers citing papers by Didier Bouvet

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Didier Bouvet. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Didier Bouvet. The network helps show where Didier Bouvet may publish in the future.

Co-authorship network of co-authors of Didier Bouvet

This figure shows the co-authorship network connecting the top 25 collaborators of Didier Bouvet. A scholar is included among the top collaborators of Didier Bouvet based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Didier Bouvet. Didier Bouvet is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Bouvet, Didier, et al.. (2020). 4H-SiC Power VDMOSFET Manufacturing Utilizing POCl<sub>3</sub> Post Oxidation Annealing. Materials science forum. 1004. 559–564. 1 indexed citations
2.
3.
Moll, M., M. D. M. Capeans Garrido, Mikko Ritala, et al.. (2019). METAL THIN-FILM DOSIMETRY TECHNOLOGY FOR THE ULTRA-HIGH PARTICLE FLUENCE ENVIRONMENT OF THE FUTURE CIRCULAR COLLIDER AT CERN. CERN Bulletin. 3(3). 2 indexed citations
4.
Mandić, I., Anže Jazbec, Luka Snoj, et al.. (2018). Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN. IEEE Transactions on Nuclear Science. 65(8). 1583–1590. 9 indexed citations
5.
Wipf, Mathias, R. Stoop, K. Bedner, et al.. (2015). Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon. ACS Nano. 9(5). 4872–4881. 50 indexed citations
6.
Barbut, Lucian, Farzan Jazaeri, Didier Bouvet, & Jean-Michel Sallèse. (2014). Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices. IEEE Transactions on Electron Devices. 61(7). 2486–2494. 6 indexed citations
7.
Barbut, Lucian, Farzan Jazaeri, Didier Bouvet, & Jean-Michel Sallèse. (2013). Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 4(3). 103–109. 3 indexed citations
8.
Barbut, Lucian, Farzan Jazaeri, Didier Bouvet, & Jean-Michel Sallèse. (2013). Transient Off-Current in Junctionless FETs. IEEE Transactions on Electron Devices. 60(6). 2080–2083. 21 indexed citations
9.
Barbut, Lucian, Farzan Jazaeri, Didier Bouvet, & Jean-Michel Sallèse. (2013). Heavily doped junctionless vertical slit FETs with slit width Below 20 nm. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 397–400. 5 indexed citations
10.
Bouvet, Didier, et al.. (2011). Accumulation-mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 311–314. 6 indexed citations
11.
Bouvet, Didier, et al.. (2011). Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 33. 145–146. 4 indexed citations
12.
Salvatore, Giovanni A., Livio Lattanzio, Didier Bouvet, et al.. (2010). Ferroelectric transistors with improved characteristics at high temperature. Applied Physics Letters. 97(5). 26 indexed citations
13.
Moselund, Kirsten E., Sarah H. Olsen, Didier Bouvet, et al.. (2010). The High-Mobility Bended n-Channel Silicon Nanowire Transistor. IEEE Transactions on Electron Devices. 57(4). 866–876. 35 indexed citations
14.
Salvatore, Giovanni A., Livio Lattanzio, Didier Bouvet, & Adrian M. Ionescu. (2009). An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 3. 97–100. 2 indexed citations
15.
Moselund, Kirsten E., David Atienza, Didier Bouvet, et al.. (2008). Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 27(11). 2053–2067. 7 indexed citations
16.
Moselund, Kirsten E., Didier Bouvet, & Adrian M. Ionescu. (2008). Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics. IEEE Electron Device Letters. 29(9). 1059–1061.
17.
Moselund, Kirsten E., V. Pott, Didier Bouvet, & Adrian M. Ionescu. (2007). Abrupt current switching due to impact ionization effects in &#x2126;-MOSFET on low doped bulk silicon. Infoscience (Ecole Polytechnique Fédérale de Lausanne). 287–290. 6 indexed citations
18.
Sallèse, Jean-Michel & Didier Bouvet. (2006). Principles of space-charge based bi-stable MEMS: The junction-MEMS. Sensors and Actuators A Physical. 133(1). 173–179. 6 indexed citations
19.
Bouvet, Didier, et al.. (2003). Ta/low-κ CMP with Colloidal Silica Particles. MRS Proceedings. 767. 1 indexed citations
20.
Ecoffey, Serge, Didier Bouvet, Adrian M. Ionescu, & P. Fazan. (2002). Low-pressure chemical vapour deposition of nanograin polysilicon ultra-thin films. Nanotechnology. 13(3). 290–293. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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