S. Okhonin

847 total citations
29 papers, 632 citations indexed

About

S. Okhonin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Computer Networks and Communications. According to data from OpenAlex, S. Okhonin has authored 29 papers receiving a total of 632 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 2 papers in Computer Networks and Communications. Recurrent topics in S. Okhonin's work include Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Advanced Memory and Neural Computing (8 papers). S. Okhonin is often cited by papers focused on Semiconductor materials and devices (24 papers), Advancements in Semiconductor Devices and Circuit Design (17 papers) and Advanced Memory and Neural Computing (8 papers). S. Okhonin collaborates with scholars based in Switzerland, France and United States. S. Okhonin's co-authors include M. Nagoga, P. Fazan, Jean-Michel Sallèse, J.-M. Sallese, M. Dutoit, T. Hessler, Lorenz Risch, M. A. Py, A. K. Tagantsev and H. Fischer and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Journal of Solid-State Circuits.

In The Last Decade

S. Okhonin

29 papers receiving 610 citations

Peers

Countries citing papers authored by S. Okhonin

Since Specialization

Citations

This map shows the geographic impact of S. Okhonin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Okhonin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Okhonin more than expected).

Fields of papers citing papers by S. Okhonin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Okhonin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Okhonin. The network helps show where S. Okhonin may publish in the future.

Co-authorship network of co-authors of S. Okhonin

This figure shows the co-authorship network connecting the top 25 collaborators of S. Okhonin. A scholar is included among the top collaborators of S. Okhonin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Okhonin. S. Okhonin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	A dynamic operation of a PIN photodiode 2015 ·Applied Physics Letters ·S. Okhonin, (unknown), (unknown), J. Appel, A. Koukab, Alexander Kvasov, Marc Pastre, E. S. Polzik, A. K. Tagantsev, (unknown), Maher Kayal	8
2	Ultra-scaled Z-RAM cell 2008 ·UWA Profiles and Research Repository (University of Western Australia) ·S. Okhonin, M. Nagoga, Christopher Lee, J.P. Colinge, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Wenjing Xiong, Viktor Sverdlov, S. Selberherr, C. Mazuré	24
3	Capacitorless 1T DRAM Sensing Scheme With Automatic Reference Generation 2006 ·IEEE Journal of Solid-State Circuits ·Marija Blagojević, Maher Kayal, Marc Pastre, (unknown), M. Declercq, S. Okhonin, P. Fazan	13
4	Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique 2004 ·Microelectronic Engineering ·M. Nagoga, S. Okhonin, P. Fazan	1
5	SOI capacitor-less 1-transistor DRAM sensing scheme with automatic reference generation 2004 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Marija Blagojević, Marc Pastre, Maher Kayal, P. Fazan, S. Okhonin, M. Nagoga, M. Declercq	4
6	Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique 2004 ·Microelectronic Engineering ·M. Nagoga, S. Okhonin, P. Fazan	2
7	SOI Floating Body Memories for Embedded Memory Applications 2004 ·P. Fazan, S. Okhonin, M. Nagoga	5
8	Capacitor-Less 1-Transistor DRAM 2002 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·P. Fazan, S. Okhonin, M. Nagoga, Jean-Michel Sallèse, (unknown), (unknown), Maher Kayal, Marc Pastre, Marija Blagojević, (unknown), M. Declercq	11
9	Principles of transient charge pumping on partially depleted SOI MOSFETs 2002 ·IEEE Electron Device Letters ·S. Okhonin, M. Nagoga, P. Fazan	25
10	A SOI capacitor-less 1T-DRAM concept 2002 ·S. Okhonin, M. Nagoga, J.-M. Sallese, P. Fazan	112
11	Transient effects in PD SOI MOSFETs and potential DRAM applications 2002 ·Solid-State Electronics ·S. Okhonin, M. Nagoga, Jean-Michel Sallèse, P. Fazan, O. Faynot, J. de Pontcharra, S. Cristoloveanu, H. van Meer, K. De Meyer	6
12	Constant-current study of dielectric breakdown of Pb(Zr,Ti)O₃ ferroelectric film capacitors 2001 ·Integrated ferroelectrics ·Igor Stolichnov, A. K. Tagantsev, N. Setter, S. Okhonin, P. Fazan, Jeffrey S. Cross, M. Tsukada, Andrei Bartic, D. J. Wouters	5
13	Low-frequency noise in electrically stressed n-MOSFETs 1999 ·Solid-State Electronics ·(unknown), S. Okhonin, M. Ilegems	12
14	DC and low-frequency noise characteristics of SiGe p-channel FETs designed for 0.13-μm technology 1999 ·IEEE Transactions on Electron Devices ·S. Okhonin, M. A. Py, (unknown), H. Fischer, Lorenz Risch	30
15	Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime 1999 ·Applied Physics Letters ·S. Okhonin, P. Fazan, G. Guégan, S. Deleonibus, F. Martín	10
16	Origin of the charge to breakdown distributions in thin silicon dioxide films 1998 ·Applied Physics Letters ·S. Okhonin, P. Fazan	5
17	Kinetics of Hot-Carrier Degradation of Submicron n-Channel LDD MOSFET's 1996 ·European Solid-State Device Research Conference ·S. Okhonin, T. Hessler, M. Dutoit	2
18	Comparison of gate-induced drain leakage and charge pumping measurements for determining lateral interface trap profiles in electrically stressed MOSFETs 1996 ·IEEE Transactions on Electron Devices ·S. Okhonin, T. Hessler, M. Dutoit	20
19	Spatial distribution of interface traps after hot-carrier stress from forward GIDL measurements 1995 ·Microelectronic Engineering ·S. Okhonin, T. Hessler, M. Dutoit	5
20	The Influence of Quantization on the Space‐Charge Layer Capacitance of Si in Strong Accumulation 1986 ·physica status solidi (b) ·(unknown), S. Okhonin, A. G. Pogosov	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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