M. Ilegems

11.7k citations

230 papers · 9.1k indexed · 3 hit papers · h-index 50

Impact in

Condensed Matter Physics top 0.2%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 0.2%
- Semiconductor Quantum Structures and Devices
- Strong Light-Matter Interactions

Papers in

Atomic and Molecular Physics, and Optics 165
- Semiconductor Quantum Structures and Devices 113
- Strong Light-Matter Interactions 25
Condensed Matter Physics 52
- GaN-based semiconductor devices and materials 49

Co-authors: R. Houdré U. Oesterlé R. Dingle A. S. Barker R. P. Stanley Claude Weisbuch J.‐F. Carlin M. B. Panish
Journals: Applied Physics Letters (47 papers)Journal of Applied Physics (19 papers)Journal of Crystal Growth (17 papers)Physical review. B, Condensed matter (14 papers)Electronics Letters (7 papers)
Partner nations: Switzerland France Germany

In The Last Decade

M. Ilegems

221 papers receiving 8.5k citations

Hit Papers

align trajectories log scale

Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature 2002 · 580 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2002 Science
1973 Physical review. B, Solid state
1971 Physical review. B, Solid state

Peers

Countries citing papers authored by M. Ilegems

Since Specialization

Citations

This map shows the geographic impact of M. Ilegems's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ilegems with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ilegems more than expected).

Fields of papers citing papers by M. Ilegems

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ilegems. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ilegems. The network helps show where M. Ilegems may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Ilegems, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Ilegems Line = papers co-authored together M. Ilegems links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Optical gain saturation effects in InAs/GaAs self-assembled quantum dots Optica Applicata ·Michał Wasiak, M. Bugajski, Meli Ulandari, Tomasz J. Ochalski, J. Kątcki, Robert P. Sarzała, P. Maćkowiak, Tomasz Czyszanowski, W. Nakwaski, Husnija Tahirović, U. Oesterlé, Andrea Fiore, M. Ilegems	2002	4
2	Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications Comptes Rendus Physique ·King, Alan J. C., 1933-, R. Houdré, M. Ilegems, Pen- Zance Evershed, B. Borchert	2002	4
3	Light-current characterization of dual-wavelength VCSELs Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Vlad Badilita, J.‐F. Carlin, Amrutha.E Remya, M. Ilegems	2002	7
4	Coupling of impurity modes in one-dimensional periodic systems Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics ·P. Royo, R. P. Stanley, M. Ilegems	2001	6
5	Nonlinear Emission of Semiconductor Microcavities in the Strong Coupling Regime Physical Review Letters ·R. Houdré, Claude Weisbuch, R. P. Stanley, U. Oesterlé, M. Ilegems	2000	99
6	Electrically tunable, room-temperature quantum-cascade lasers Applied Physics Letters ·Antoine Müller, Mattias Beck, Jérôme Faist, U. Oesterlé, M. Ilegems	1999	31
7	Pulsed response of an MSM photodiode at high optical radiation energies Quantum Electronics ·A. Molinaro, Yurii V. Gulyaev, M. Ilegems, R. Sachot	1998	0
8	Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575° C by molecular beam epitaxy Applied Physics Letters ·Matthew Zervos, Qodir Gaybulov, M. Elliott, Mattias Beck, M. Ilegems	1998	11
9	Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices Journal of Applied Physics ·Serkan Polat, L. Holst, R. Sachot, M. Ilegems	1995	3
10	Low-frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors Journal of Applied Physics ·L. Holst, B. Deveaud, H.‐J. Bühlmann, M. Ilegems	1995	10
11	Influence of the device-width on the accuracy of quantization in the integer quantum Hall effect IEEE Transactions on Instrumentation and Measurement ·B. Jeanneret, B. Jeckelmann, H.‐J. Bühlmann, R. Houdré, M. Ilegems	1995	22
12	Analytical modeling of modfet transfer characteristics at low drain bias by taking into account the dependence of mobility on 2d electron gas concentration Brazilian Journal of Physics ·M. A. Py, Zhan Shi, L. Holst, M. Ilegems, M. V. B. Moreira, H.‐J. Buehlmann	1994	2
13	As/P interdiffusion in ultrathin InAs/InP strained quantum wells Applied Physics Letters ·J.-M. Sallese, Stephen Taylor, H.‐J. Bühlmann, J.‐F. Carlin, A. Rudra, R. Houdré, M. Ilegems	1994	16
14	DC Characterization and Low-Frequency Noise in δ-, Pulse- and Uniformly-doped GaAs/AIGaAs MODFETs European Solid-State Device Research Conference ·Zhan Shi, M. A. Py, H.‐J. Bühlmann, M. Ilegems	1993	1
15	Free-electron laser internal photoemission measurements of heterojunction band discontinuities Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·J. T. McKinley, R. G. Albridge, Romany Esshak Ghobrial, Akira Ueda, N. H. Tolk, C. Coluzza, F. Gozzo, G. Margaritondo, D. Martin, F. Morier‐Genoud, Charles Dupuy, A. Rudra, M. Ilegems	1993	7
16	Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates Semiconductor Science and Technology ·Hisatoshi Sugiura, A. Rudra, J.‐F. Carlin, H.‐J. Bühlmann, D. Araújo, M. Ilegems	1993	4
17	Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·M. V. B. Moreira, M. A. Py, M. Gailhanou, M. Ilegems	1992	9
18	Self-consistent calculations of tunneling currents in n+-GaAs/i- AlxGa1−xAs/n+-GaAs structures and comparison with measurements Journal of Applied Physics ·B. Zimmermann, Durán Arrom, M. Ilegems, P. Guéret	1988	9
19	Correlation between Flatband Voltage Shift in MOS Capacitors and Endurance Degradation of EEPROM Cells European Solid-State Device Research Conference ·Maurer Wf, M. Dutoit, M. Ilegems	1987	2
20	Integrated multijunction GaAs photodetector with high output voltage Applied Physics Letters ·M. Ilegems, B. Schwartz, L. A. Koszi, Richard C. Miller	1978	34

About M. Ilegems

M. Ilegems is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Surfaces, Coatings and Films and Electronic, Optical and Magnetic Materials, having authored 230 papers that have together received 9.1k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (113 papers), Semiconductor Lasers and Optical Devices (57 papers), GaN-based semiconductor devices and materials (49 papers), Semiconductor materials and devices (49 papers), Photonic and Optical Devices (37 papers), Advancements in Semiconductor Devices and Circuit Design (25 papers), Advanced Semiconductor Detectors and Materials (25 papers) and Strong Light-Matter Interactions (25 papers). The work is most often cited by research in Condensed Matter Physics (3.0k citations), Atomic and Molecular Physics, and Optics (5.9k citations), Electrical and Electronic Engineering (4.7k citations), Electronic, Optical and Magnetic Materials (1.3k citations) and Spectroscopy (895 citations). M. Ilegems has collaborated with scholars based in Switzerland, France and Germany. Frequent co-authors include R. Houdré, U. Oesterlé, R. Dingle, A. S. Barker, R. P. Stanley, Claude Weisbuch, R. P. Stanley, J.‐F. Carlin, M. B. Panish and J.‐F. Carlin. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, Journal of Crystal Growth, Physical review. B, Condensed matter and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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