M. S. Shur

51.1k citations

1.2k papers · 39.5k indexed · 8 hit papers · h-index 96

Impact in

Condensed Matter Physics top 0.01%
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 0.05%
- Semiconductor Quantum Structures and Devices

Papers in

Condensed Matter Physics 447
- GaN-based semiconductor devices and materials 437
Atomic and Molecular Physics, and Optics 518
- Semiconductor Quantum Structures and Devices 356

Co-authors: R. Gaška M. I. Dyakonov M. E. Levinshteĭn S. L. Rumyantsev Sergey Rumyantsev L.F. Eastman G. Simin M. Hack
Journals: Applied Physics Letters (157 papers)Journal of Applied Physics (118 papers)IEEE Transactions on Electron Devices (88 papers)Electronics Letters (59 papers)IEEE Electron Device Letters (51 papers)
Partner nations: United States Russia Lithuania

In The Last Decade

M. S. Shur

1.2k papers receiving 37.8k citations

Hit Papers

8 papers align trajectories log scale

An experimental study of contact effects in organic thin film transistors 2006 · 383 citations

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if any of the following hold:

it has ≥500 total citations;
it reaches ≥1.5× the top-1% citation threshold for papers in the same subfield and year (the threshold is the minimum needed to enter the top 1%, not the average within it);
it reaches the top citation threshold in at least one of its specific research topics.

2006 Journal of Applied Physics
2001 John Wiley eBooks
1999 Journal of Applied Physics
1996 IEEE Transactions on Electron Devices
1993 Physical Review Letters
1991 Proceedings of the IEEE
1987 CERN Document Server (European Organization for Nuclear Research)
1980 Journal of Applied Physics

Peers

Countries citing papers authored by M. S. Shur

Since Specialization

Citations

This map shows the geographic impact of M. S. Shur's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. S. Shur with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. S. Shur more than expected).

Fields of papers citing papers by M. S. Shur

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. S. Shur. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. S. Shur. The network helps show where M. S. Shur may publish in the future.

Co-authors

The 25 scholars most cited alongside M. S. Shur, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. S. Shur Line = papers co-authored together M. S. Shur links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Phase- and Angle-Sensitive Terahertz Hot-Electron Bolometric Plasmonic Detectors Based on Fets with Graphene Channel and Composite H-BN/Black-P/H-BN Gate Layer International Journal of High Speed Electronics and Systems ·V. Ryzhii, Chao Tang, Taiichi Otsuji, M. S. Shur, M. Ryzhii, Vladimir Mitin	2024	1
2	Impact of fin aspect ratio on enhancement of external quantum efficiency in single AlGaN fin light-emitting diodes pixels Applied Physics Letters ·Babak Nikoobakht, Yuqin Zong, Okan Koksal, Amit Agrawal, Christopher B. Montgomery, Jaime Rumsey, Jacob H. Leach, M. S. Shur	2023	2
3	Resonant THz detection by periodic multi-gate plasmonic FETs Frontiers in Physics ·Yuhui Zhang, M. S. Shur	2023	1
4	Editors’ Choice—Thin Film Transistor Response in the THz Range ECS Journal of Solid State Science and Technology ·M. S. Shur, Xueqing Liu, Trond Ytterdal	2023	1
5	Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$$_x$$P$$_{1-x}$$ gate layer Scientific Reports ·V. Ryzhii, Chao Tang, Taiichi Otsuji, M. Ryzhii, Vladimir Mitin, M. S. Shur	2023	8
6	Multi-Segment TFT Compact Model for THz Applications Nanomaterials ·Xueqing Liu, Trond Ytterdal, M. S. Shur	2022	5
7	ZnO Fin Optical Cavities The Journal of Physical Chemistry C ·Babak Nikoobakht, Jonathan Lee, Amit Agrawal, Scott A. Wight, M. S. Shur	2022	1
8	High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs) Science Advances ·Babak Nikoobakht, Robin P. Hansen, Yuqin Zong, Amit Agrawal, M. S. Shur, J. Tersoff	2020	35
9	Concepts of infrared and terahertz photodetectors based on vertical graphene van der Waals and HgTe-CdHgTe heterostructures Opto-Electronics Review ·M. Ryzhii, Taiichi Otsuji, V. Ryzhii, V. Ya. Aleshkin, А. А. Дубинов, Valeriy E. Karasik, V. G. Leiman, Vladimir Mitin, M. S. Shur	2019	2
10	Current driven "plasmonic boom" instability in gated periodic ballistic nanostructures arXiv (Cornell University) ·G. R. Aǐzin, J. Mikalopas, M. S. Shur	2015	2
11	純誘導負荷回路における高電流に対する4H-SiCサイリスタ(18kV級)の光学的トリガー Semiconductor Science and Technology ·S. L. Rumyantsev, M. E. Levinshteĭn, Tanuj Saxena, M. S. Shur, Lu Cheng, John W. Palmour, Amish Agarwal	2014	22
12	Physics of GaN-based Power Field Effect Transistors ECS Transactions ·M. S. Shur	2013	1
13	Handbook Series on Semiconductor Parameters WORLD SCIENTIFIC eBooks ·M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur	2012	112
14	Plasma wave electronics for generation and detection of THz radiation M. S. Shur	2006	4
15	Terahertz sensing technology. Vol 2: Emerging scientific applications & novel device concepts International Journal of High Speed Electronics and Systems ·Dwight Woolard, William R. Loerop, M. S. Shur	2003	3
16	Semiconductor technology : processing and novel fabrication techniques Wiley eBooks ·M. E. Levinshteĭn, M. S. Shur	1997	18
17	Handbook Series on Semiconductor Parameters WORLD SCIENTIFIC eBooks ·M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur	1996	372
18	Compound Semiconductor Electronics M. S. Shur	1996	12
19	Dependence on Gate Length of Electrical Properties of Self-aligned AlGaAs/GaAs HEMTs Studied by Monte Carlo Technique European Solid-State Device Research Conference ·Jensen, Lund Lund, Fjeldly, M. S. Shur	1989	2
20	High-field Domains in Gunn Diodes with Two Kinds of Carriers JETP ·Boris Gelmont, M. S. Shur	1971	3

About M. S. Shur

M. S. Shur is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Astronomy and Astrophysics, having authored 1.2k papers that have together received 39.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (437 papers), Semiconductor Quantum Structures and Devices (356 papers), Semiconductor materials and devices (335 papers), Advancements in Semiconductor Devices and Circuit Design (258 papers), Terahertz technology and applications (212 papers), Ga2O3 and related materials (153 papers), Superconducting and THz Device Technology (113 papers) and Silicon Carbide Semiconductor Technologies (100 papers). The work is most often cited by research in Condensed Matter Physics (16.4k citations), Atomic and Molecular Physics, and Optics (14.7k citations), Electrical and Electronic Engineering (27.0k citations), Electronic, Optical and Magnetic Materials (8.1k citations) and Materials Chemistry (9.9k citations). M. S. Shur has collaborated with scholars based in United States, Russia and Lithuania. Frequent co-authors include R. Gaška, M. I. Dyakonov, M. E. Levinshteĭn, S. L. Rumyantsev, Sergey Rumyantsev, L.F. Eastman, G. Simin, M. Hack, Boris Gelmont and Jinwei Yang. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Devices, Electronics Letters and IEEE Electron Device Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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