J. Yang

3.6k total citations
59 papers, 3.0k citations indexed

About

J. Yang is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Yang has authored 59 papers receiving a total of 3.0k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Condensed Matter Physics, 48 papers in Electrical and Electronic Engineering and 24 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Yang's work include GaN-based semiconductor devices and materials (53 papers), Semiconductor materials and devices (36 papers) and Ga2O3 and related materials (23 papers). J. Yang is often cited by papers focused on GaN-based semiconductor devices and materials (53 papers), Semiconductor materials and devices (36 papers) and Ga2O3 and related materials (23 papers). J. Yang collaborates with scholars based in United States, South Korea and France. J. Yang's co-authors include M. S. Shur, R. Gaška, G. Simin, M. Asif Khan, X. Hu, A. Osinsky, M.A. Khan, Ahmad Tarakji, A. Koudymov and A. Lunev and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J. Yang

57 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Yang United States 26 2.7k 2.1k 1.4k 721 631 59 3.0k
J. Hilsenbeck Germany 14 2.3k 0.9× 1.4k 0.7× 1.2k 0.9× 832 1.2× 836 1.3× 29 2.7k
Q. Chen United States 23 2.4k 0.9× 1.5k 0.7× 1.1k 0.8× 677 0.9× 865 1.4× 37 2.6k
S. Arulkumaran Singapore 33 3.0k 1.1× 2.4k 1.2× 1.5k 1.1× 749 1.0× 735 1.2× 137 3.3k
S.T. Sheppard United States 17 2.4k 0.9× 2.3k 1.1× 764 0.6× 503 0.7× 744 1.2× 54 2.9k
T.E. Kazior United States 17 1.9k 0.7× 2.0k 1.0× 657 0.5× 475 0.7× 808 1.3× 72 2.6k
P. Parikh United States 19 3.6k 1.3× 2.9k 1.4× 1.4k 1.0× 876 1.2× 1.0k 1.6× 53 3.9k
J. Kuzmı́k Slovakia 29 2.7k 1.0× 2.2k 1.1× 1.3k 1.0× 660 0.9× 703 1.1× 135 3.1k
Masaaki Kuzuhara Japan 27 2.0k 0.7× 2.3k 1.1× 913 0.7× 466 0.6× 849 1.3× 191 2.8k
Tomoyoshi Mishima Japan 30 2.0k 0.7× 2.3k 1.1× 1.1k 0.8× 925 1.3× 1.1k 1.7× 182 3.2k
Frank Brunner Germany 28 2.2k 0.8× 1.5k 0.7× 1.2k 0.9× 704 1.0× 444 0.7× 135 2.5k

Countries citing papers authored by J. Yang

Since Specialization
Citations

This map shows the geographic impact of J. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yang more than expected).

Fields of papers citing papers by J. Yang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yang. The network helps show where J. Yang may publish in the future.

Co-authorship network of co-authors of J. Yang

This figure shows the co-authorship network connecting the top 25 collaborators of J. Yang. A scholar is included among the top collaborators of J. Yang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Yang. J. Yang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yang, J., et al.. (2020). Optofluidic phase-shifting digital holographic microscopy for quantitative measurement of microfluidic diffusion dynamics. Journal of Applied Physics. 127(13). 10 indexed citations
2.
Oh, Mi‐Jin, J. Yang, Hyun‐Woo Kim, Seongjun Kim, & Kwang‐Soon Ahn. (2020). Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer. Journal of the Korean Physical Society. 76(4). 278–280. 7 indexed citations
3.
Hong, Song, Kyu-Hwan Shim, & J. Yang. (2008). Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface. Electronics Letters. 44(18). 1091–1093. 20 indexed citations
4.
Simin, G., et al.. (2005). High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors. IEEE Electron Device Letters. 26(2). 56–58. 27 indexed citations
5.
Semet, V., Vu Thien Binh, Jianping Zhang, et al.. (2004). Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter. Applied Physics Letters. 84(11). 1937–1939. 22 indexed citations
6.
Adesida, I., V. Kumar, & J. Yang. (2003). High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire. IEICE Transactions on Electronics. 86(10). 1955–1959. 5 indexed citations
7.
Youn, C. J., et al.. (2003). Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs. Journal of Crystal Growth. 250(3-4). 331–338. 25 indexed citations
8.
Rumyantsev, S. L., Yu Deng, M. E. Levinshteĭn, et al.. (2003). On the low frequency noise mechanisms in GaN/AlGaN HFETs. Semiconductor Science and Technology. 18(6). 589–593. 24 indexed citations
9.
Kumar, V., Wu Lu, R. Schwindt, et al.. (2002). AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz. IEEE Electron Device Letters. 23(8). 455–457. 191 indexed citations
10.
Kumar, V., Wu Lu, Farid Khan, et al.. (2002). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm. Electronics Letters. 38(5). 252–253. 13 indexed citations
11.
Seo, Jin Won, et al.. (2002). Bias-assisted photoelectrochemical oxidation of n-GaN in H2O. Applied Physics Letters. 81(6). 1029–1031. 24 indexed citations
12.
Tarakji, Ahmad, X. Hu, A. Koudymov, et al.. (2002). DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress. Solid-State Electronics. 46(8). 1211–1214. 27 indexed citations
13.
Koudymov, A., X. Hu, G. Simin, et al.. (2002). Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs. IEEE Electron Device Letters. 23(8). 449–451. 55 indexed citations
14.
Deng, J., T. Werner, M. S. Shur, et al.. (2001). Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs. 1 indexed citations
15.
Rumyantsev, S. L., Nezih Pala, M. S. Shur, et al.. (2001). Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors. Applied Physics Letters. 79(6). 866–868. 55 indexed citations
16.
Khan, M. Asif, J. Yang, W. Knap, et al.. (2000). GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates. Applied Physics Letters. 76(25). 3807–3809. 85 indexed citations
17.
Khan, M.A., X. Hu, A. Lunev, et al.. (2000). AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor. IEEE Electron Device Letters. 21(2). 63–65. 320 indexed citations
18.
Yang, J., et al.. (1999). Piezoelectric doping in AlInGaN/GaN heterostructures. Applied Physics Letters. 75(18). 2806–2808. 39 indexed citations
19.
Khan, M. Asif, et al.. (1998). Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors. Applied Physics Letters. 72(12). 1475–1477. 8 indexed citations
20.
Khan, M. Asif, et al.. (1996). Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors. Applied Physics Letters. 68(4). 514–516. 148 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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