J. Yang

3.6k citations

59 papers · 3.0k indexed · h-index 26

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 53
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials 23
Electrical and Electronic Engineering top 2%
- Semiconductor materials and devices 36
- Silicon Carbide Semiconductor Technologies 15
- Advancements in Semiconductor Devices and Circuit Design 11
- Radio Frequency Integrated Circuit Design 6
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices 4
Materials Chemistry top 10%
- ZnO doping and properties 6

Co-authors: M. S. Shur R. Gaška G. Simin M. Asif Khan X. Hu A. Osinsky M.A. Khan Ahmad Tarakji
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (17 papers)IEEE Electron Device Letters (9 papers)Electronics Letters (5 papers)
Partner nations: United States South Korea France

In The Last Decade

J. Yang

57 papers receiving 2.8k citations

Peers

Countries citing papers authored by J. Yang

Since Specialization

Citations

This map shows the geographic impact of J. Yang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Yang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Yang more than expected).

Fields of papers citing papers by J. Yang

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Yang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Yang. The network helps show where J. Yang may publish in the future.

Co-authorship network

The 25 scholars most cited alongside J. Yang, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Yang Line = papers co-authored together J. Yang links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Optofluidic phase-shifting digital holographic microscopy for quantitative measurement of microfluidic diffusion dynamics Journal of Applied Physics ·Liu Cheng-rong,J. Yang,Xin Tu,Tianye Huang,Zhizhao Che,Chaolong Song	2020	10
2	Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer Journal of the Korean Physical Society ·Mi‐Jin Oh,J. Yang,Hyun‐Woo Kim,Seongjun Kim,Kwang‐Soon Ahn	2020	7
3	Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT Journal of the Korean Physical Society ·柳清,Shinn shinntou,J. Yang,W.E. Stanchina	2014	2
4	Robust ESD protection for high brightness GaN LEDs using new TVS Zener diodes Semiconductor Science and Technology ·María E. Milanés Murcia,Шафоростова Валентина Михайловна,Chel‐Jong Choi,Andrian Febriandi,J. Yang,Kyu-Hwan Shim	2011	2
5	Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface Electronics Letters ·Song Hong,Kyu-Hwan Shim,J. Yang	2008	20
6	Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·V. Semet,Vu Thien Binh,Jianping Zhang,J. Yang,M. Asif Khan,Raphael Tsu	2005	6
7	High-power RF switching using III-nitride metal-oxide-semiconductor heterojunction capacitors IEEE Electron Device Letters ·G. Simin,A. Koudymov,A. Cbisakuta,V. Adivarahan,J. Yang,M.A. Khan	2005	27
8	High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire IEICE Transactions on Electronics ·I. Adesida,V. Kumar,J. Yang	2003	5
9	Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs Journal of Crystal Growth ·C. J. Youn,T. S. Jeong,Min Han,J. Yang,AYUSHI SINGH MANDAN,Maria Isabella Spindola Francisco	2003	25
10	Mobility enhancement in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors Semiconductor Science and Technology ·M. E. Levinshteĭn,P. A. Ivanov,M. Asif Khan,G. Simin,Jianping Zhang,X. Hu,J. Yang	2003	18
11	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm Electronics Letters ·V. Kumar,Wu Lu,Farid Khan,R. Schwindt,A. Kuliev,G. Simin,J. Yang,M. Asif Khan,I. Adesida	2002	13
12	Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs IEEE Electron Device Letters ·A. Koudymov,X. Hu,Assia Alaoui Bensalah,G. Simin,Mohammod Ali,J. Yang,M. Asif Khan	2002	55
13	DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress Solid-State Electronics ·Ahmad Tarakji,X. Hu,A. Koudymov,G. Simin,J. Yang,M.A. Khan,M. S. Shur,R. Gaška	2002	27
14	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar,Wu Lu,R. Schwindt,A. Kuliev,G. Simin,J. Yang,M. Asif Khan,I. Adesida	2002	191
15	Bias-assisted photoelectrochemical oxidation of n-GaN in H2O Applied Physics Letters ·Jin Won Seo,Aziz Zoulhi,Hwan-Hee Jeong,J. Yang,K. Y. Lim,EstÃ©lio Dantas,いずみ増山	2002	24
16	Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs J. Deng,T. Werner,M. S. Shur,R. Gaška,Asif Khan,G. Simin,J. Yang	2001	1
17	Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters ·S. L. Rumyantsev,Nezih Pala,M. S. Shur,R. Gaška,M. E. Levinshteĭn,V. Adivarahan,J. Yang,G. Simin,M. Asif Khan	2001	55
18	AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor IEEE Electron Device Letters ·M.A. Khan,X. Hu,Kathryn Shedden,A. Lunev,J. Yang,R. Gaška,M. S. Shur	2000	320
19	GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates Applied Physics Letters ·M. Asif Khan,J. Yang,W. Knap,Éric Frayssinet,X. Hu,G. Simin,P. Prystawko,M. Leszczyński,I. Grzegory,S. Porowski,R. Gaška,M. S. Shur,B. Beaumont,M. Teisseire,G. Neu	2000	85
20	Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors Applied Physics Letters ·M. Asif Khan,Q. Chen,C. J. Sun,J. Yang,Jayne Toyne,M. S. Shur,龙洋子	1996	148

About J. Yang

J. Yang is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering, having authored 59 papers that have together received 3.0k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (53 papers), Semiconductor materials and devices (36 papers), Ga2O3 and related materials (23 papers), Silicon Carbide Semiconductor Technologies (15 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Radio Frequency Integrated Circuit Design (6 papers), ZnO doping and properties (6 papers) and Semiconductor Quantum Structures and Devices (4 papers). The work is most often cited by research in Condensed Matter Physics (2.7k citations), Electronic, Optical and Magnetic Materials (1.4k citations) and Electrical and Electronic Engineering (2.1k citations). J. Yang has collaborated with scholars based in United States, South Korea and France. Frequent co-authors include M. S. Shur, R. Gaška, G. Simin, M. Asif Khan, X. Hu, A. Osinsky, M.A. Khan, Ahmad Tarakji, A. Koudymov and A. Lunev. Their work appears in journals such as Applied Physics Letters, IEEE Electron Device Letters, Electronics Letters, Semiconductor Science and Technology and Solid-State Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact