K.H.G. Duh

2.1k citations

77 papers · 1.5k indexed · h-index 19

Impact in

Atomic and Molecular Physics, and Optics top 2%
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 5%
- Radio Frequency Integrated Circuit Design
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Lasers and Optical Devices
- Microwave Engineering and Waveguides

Papers in

Atomic and Molecular Physics, and Optics 57
- Semiconductor Quantum Structures and Devices 53
Condensed Matter Physics 21
- GaN-based semiconductor devices and materials 21

Co-authors: P.C. Chao P.M. Smith P. Ho J. M. Ballingall Ming-Yih Kao A.A. Jabra L. F. Lester A.J. Tessmer
Journals: IEEE Electron Device Letters (11 papers)IEEE Transactions on Electron Devices (9 papers)Electronics Letters (5 papers)Solid-State Electronics (3 papers)Applied Physics Letters (1 paper)
Partner nations: United States Sweden Israel

In The Last Decade

K.H.G. Duh

74 papers receiving 1.4k citations

Peers

Countries citing papers authored by K.H.G. Duh

Since Specialization

Citations

This map shows the geographic impact of K.H.G. Duh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.H.G. Duh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.H.G. Duh more than expected).

Fields of papers citing papers by K.H.G. Duh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.H.G. Duh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.H.G. Duh. The network helps show where K.H.G. Duh may publish in the future.

Co-authorship network

The 25 scholars most cited alongside K.H.G. Duh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with K.H.G. Duh Line = papers co-authored together K.H.G. Duh links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub> Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers IEEE Electron Device Letters ·D. Xu, Galal Elhawary, José Díaz, Felipe Gustavo Bernardes, J.J. Komiak, L. S. Ewen, Szilárd Pothorszky, K. B. Nichols, K.H.G. Duh, P.M. Smith, P.C. Chao, Dong Lin, Peide D. Ye	2015	28
2	Metamorphic HEMT Technology for Microwave, Millimeter-Wave, and Submillimeter-Wave Applications J.J. Komiak, P.M. Smith, K.H.G. Duh, Dong-Hui Xu, P.C. Chao	2013	7
3	Wideband medium power amplifiers using a short gate-length GaAs MMIC process Matthew Morgan, Eric Bryerton, Jofre Brito, 恵子松下, Yoshiaki Shitabayashi, K.H.G. Duh, Xiaoping Yang, P.M. Smith, Cristiane Carvalho de Paula Brito	2009	9
4	A Q-Band MHEMT 100-mW MMIC power amplifier with 46 % power-added efficiency Uli Anisa Ghea Putri, Noelia S. Lucero, D. Xu, Hal Schroeder, K.H.G. Duh, P.M. Smith	2008	3
5	0.25 mu m PHEMT X-band multifunction LNA MMIC with T/R switch and attenuator achieves 1.85 dB noise figure B.H. Lee, K.H.G. Duh, P. Ho, J Grehier, Hong Hao	2003	0
6	Very high performance 0.15 mu m gate-length InAlAs/InGaAs/InP lattice-matched HEMTs A.J. Tessmer, P.C. Chao, K.H.G. Duh, P. Ho, Ming-Yih Kao, Hong Hao, P.M. Smith, J. M. Ballingall, A.A. Jabra, Annika Buregård Eklund	2003	1
7	75-110 GHz InGaAs/GaAs HEMT high gain MMIC amplifier A. A. Gagarinskiy, K.H.G. Duh, S. Sai Chandana, 장병유, P.M. Smith	2002	2
8	4 GHz high-power high-efficiency pseudomorphic power HEMT Mónica Gil Ochoa, W. Kopp, Ming-Yih Kao, K.H.G. Duh, P.M. Smith, P.C. Chao, Annika Buregård Eklund	2002	7
9	High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA K.H.G. Duh, Barbara Bonci, 朴鐘得, P. Ho, P.C. Chao	2002	5
10	W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ IEEE Microwave and Guided Wave Letters ·P.M. Smith, J Weiss, Ming-Yih Kao, P. Ho, Youzhi Zeng, K.H.G. Duh, Mónica Gil Ochoa, P.C. Chao	1995	128
11	A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMT IEEE Microwave and Guided Wave Letters ·K.H.G. Duh, P.C. Chao, Aurora Roar Murphy, P. Ho, Ming-Yih Kao, J. M. Ballingall	1991	113
12	High electron mobility transistors - Mission accomplished for Voyager and Neptune encounter MiJo ·K.H.G. Duh, Valeria A. Severino-Orellana	1990	4
13	Materials and Device Characteristics of Pseudomorphic AlGaAs-InGaAs-GaAs and AlInAs-InGaAs-InP High Electron Mobility Transistors MRS Proceedings ·J. M. Ballingall, Pin Ho, Liu Yue-cun, Paul Martin, Annika Buregård Eklund, P.C. Chao, P.M. Smith, K.H.G. Duh	1989	9
14	Ultra-low noise characteristics of millimeter-wave high electron mobility transistors IEEE Electron Device Letters ·K.H.G. Duh, Jyunya Odake, L. F. Lester, P.C. Chao, P.M. Smith, M.B. Das, Hanie Elahifard, J. M. Ballingall	1988	13
15	Effect of epitaxial layer design on the microwave performance of high electron mobility transistors Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·S. C. Palmateer, Umesh K. Mishra, P.C. Chao, P.M. Smith, K.H.G. Duh, James C. M. Hwang	1986	2
16	Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor IEEE Electron Device Letters ·T. Henderson, M.I. Aksun, C. K. Peng, H. Morkoç̌, P.C. Chao, P.M. Smith, K.H.G. Duh, L. F. Lester	1986	90
17	Burst and low-frequency generation-recombination noise in double-heterojunction bipolar transistors IEEE Electron Device Letters ·Kim Stanton, A. van der Ziel, K.H.G. Duh, H. Morkoç	1984	15
18	Low-frequency diffusion noise in GaAs MESFET's IEEE Electron Device Letters ·K.H.G. Duh, João L. Meirelles, A. van der Ziel	1984	4
19	Instabilities in MODFET's and MODFET circuits IEEE Transactions on Electron Devices ·K.H.G. Duh, Xi Zhu, A. van der Ziel, H. Morkoç̌	1984	6
20	1/f noise in modulation-doped field effect transistors IEEE Electron Device Letters ·K.H.G. Duh, A. van der Ziel, H. Morkoç	1983	9

About K.H.G. Duh

K.H.G. Duh is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Astronomy and Astrophysics and Media Technology, having authored 77 papers that have together received 1.5k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (53 papers), Radio Frequency Integrated Circuit Design (50 papers), Semiconductor materials and devices (30 papers), GaN-based semiconductor devices and materials (21 papers), Advancements in Semiconductor Devices and Circuit Design (14 papers), Semiconductor Lasers and Optical Devices (10 papers), Microwave Engineering and Waveguides (9 papers) and Advanced Power Amplifier Design (6 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (965 citations), Electrical and Electronic Engineering (1.4k citations), Condensed Matter Physics (240 citations), Astronomy and Astrophysics (96 citations) and Electronic, Optical and Magnetic Materials (42 citations). K.H.G. Duh has collaborated with scholars based in United States, Sweden and Israel. Frequent co-authors include P.C. Chao, P.M. Smith, P. Ho, J. M. Ballingall, Ming-Yih Kao, A.A. Jabra, L. F. Lester, A.J. Tessmer, R. C. Tiberio and H. Morkoç̌. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Electronics Letters, Solid-State Electronics and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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