D. Xu

495 total citations
34 papers, 354 citations indexed

About

D. Xu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, D. Xu has authored 34 papers receiving a total of 354 indexed citations (citations by other indexed papers that have themselves been cited), including 33 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in D. Xu's work include Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Semiconductor Quantum Structures and Devices (12 papers). D. Xu is often cited by papers focused on Semiconductor materials and devices (21 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Semiconductor Quantum Structures and Devices (12 papers). D. Xu collaborates with scholars based in United States, Sweden and Japan. D. Xu's co-authors include P.M. Smith, G. Weimann, S. Kraus, G. Böhm, G. Tränkle, K.H.G. Duh, Y. Ishii, Wilhelm Klein, T. Enoki and P.C. Chao and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

D. Xu

34 papers receiving 344 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Xu United States 10 325 153 120 44 40 34 354
Hans Rohdin United States 11 345 1.1× 202 1.3× 105 0.9× 21 0.5× 35 0.9× 26 371
Y.-J. Chan Taiwan 12 401 1.2× 231 1.5× 81 0.7× 42 1.0× 56 1.4× 48 438
Chien-I Kuo Taiwan 9 311 1.0× 186 1.2× 73 0.6× 54 1.2× 50 1.3× 36 347
K.R. Gleason United States 10 362 1.1× 288 1.9× 46 0.4× 39 0.9× 43 1.1× 23 405
V. V. Korotyeyev Ukraine 11 197 0.6× 132 0.9× 145 1.2× 121 2.8× 29 0.7× 42 281
Manabu Arai Japan 11 282 0.9× 68 0.4× 85 0.7× 32 0.7× 45 1.1× 35 312
A. Sibaja-Hernandez Belgium 11 400 1.2× 95 0.6× 133 1.1× 53 1.2× 38 0.9× 47 437
J. Werking United States 7 199 0.6× 175 1.1× 46 0.4× 23 0.5× 50 1.3× 32 264
K. Kasahara Japan 14 493 1.5× 241 1.6× 236 2.0× 24 0.5× 31 0.8× 31 546
R. de Kort Netherlands 10 236 0.7× 139 0.9× 55 0.5× 24 0.5× 48 1.2× 17 342

Countries citing papers authored by D. Xu

Since Specialization
Citations

This map shows the geographic impact of D. Xu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Xu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Xu more than expected).

Fields of papers citing papers by D. Xu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Xu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Xu. The network helps show where D. Xu may publish in the future.

Co-authorship network of co-authors of D. Xu

This figure shows the co-authorship network connecting the top 25 collaborators of D. Xu. A scholar is included among the top collaborators of D. Xu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Xu. D. Xu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Xu, D., K. Chu, José Díaz, et al.. (2014). S3-P3: Advanced no-field-plate AlGaN/GaN hemts for millimeter-wave MMIC applications. 1–3. 7 indexed citations
3.
Xu, D., José Díaz, Richard Roy, et al.. (2013). 0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation. IEEE Electron Device Letters. 34(6). 744–746. 27 indexed citations
4.
Rao, R. A., L. Mathew, Sayan Saha, et al.. (2012). A low cost kerfless thin crystalline Si solar cell technology. 1837–1840. 5 indexed citations
5.
6.
Xu, D., J. Dí­az-Reyes, Xiaoping Yang, et al.. (2012). Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al<inf>2</inf>O<inf>3</inf> passivation. 43. 1–3. 1 indexed citations
7.
Xu, D., Xiaoping Yang, K. Chu, et al.. (2011). 50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN. International Journal of High Speed Electronics and Systems. 20(3). 393–398. 3 indexed citations
8.
9.
Xu, D., et al.. (2009). 50-nm Metamorphic High-Electron-Mobility Transistors With High Gain and High Breakdown Voltages. IEEE Electron Device Letters. 30(8). 793–795. 8 indexed citations
10.
11.
Xu, D., et al.. (2008). A Q-Band MHEMT 100-mW MMIC power amplifier with 46 % power-added efficiency. 277–280. 3 indexed citations
12.
Xu, D., Tetsuya Suemitsu, Hideaki Yokoyama, et al.. (1999). Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance. Solid-State Electronics. 43(8). 1527–1533. 1 indexed citations
13.
Xu, D., T. Enoki, & Y. Ishii. (1999). Impact of recess-etching-assisting resist-openings on the shapes of gate grooves for short gate length InAlAs/InGaAs heterojunction FET's. IEEE Transactions on Electron Devices. 46(5). 833–839. 6 indexed citations
14.
Xu, D.. (1998). Simple simulation of electron-beam lithography for fabricating sub-0.2 μm T-shaped gates based on a two-layer resist system. Microelectronic Engineering. 40(2). 77–83. 20 indexed citations
15.
Xu, D., T. Enoki, Tetsuya Suemitsu, et al.. (1998). Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication. Journal of Electronic Materials. 27(7). L51–L53. 1 indexed citations
16.
Xu, D., T. Enoki, Yukio Umeda, et al.. (1998). Self-compensation of short-channel effects in sub-0.1-μm InAlAs/InGaAs MODFETs by electrochemical etching. IEEE Electron Device Letters. 19(12). 484–486. 6 indexed citations
17.
Xu, D., T. Enoki, & Y. Ishii. (1998). The importance of electrochemistry-related etching in the gate-groove fabrication for InAlAs/InGaAs HFETs. IEEE Electron Device Letters. 19(1). 10–12. 11 indexed citations
18.
Xu, D., S. Kraus, G. Böhm, et al.. (1997). 2 S/mm Transconductance InAs-Inserted-Channel Modulation Doped Field Effect Transistors with a Very Close Gate-to-Channel Separation of 14.5 nm. Japanese Journal of Applied Physics. 36(4B). L470–L470. 9 indexed citations
19.
Xu, D., S. Kraus, Wilhelm Klein, et al.. (1996). Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with a novel composite channels design. IEEE Electron Device Letters. 17(6). 273–275. 61 indexed citations
20.
Xu, D., S. Kraus, Wilhelm Klein, et al.. (1996). Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with composite channels and 350-GHzfmax with 160-GHzfT. Microwave and Optical Technology Letters. 11(3). 145–147. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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