Tetsu Kachi

5.7k total citations
188 papers, 4.6k citations indexed

About

Tetsu Kachi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Tetsu Kachi has authored 188 papers receiving a total of 4.6k indexed citations (citations by other indexed papers that have themselves been cited), including 168 papers in Condensed Matter Physics, 156 papers in Electrical and Electronic Engineering and 60 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Tetsu Kachi's work include GaN-based semiconductor devices and materials (165 papers), Semiconductor materials and devices (125 papers) and Ga2O3 and related materials (60 papers). Tetsu Kachi is often cited by papers focused on GaN-based semiconductor devices and materials (165 papers), Semiconductor materials and devices (125 papers) and Ga2O3 and related materials (60 papers). Tetsu Kachi collaborates with scholars based in Japan, Poland and Switzerland. Tetsu Kachi's co-authors include Tetsuo Narita, Tsutomu Uesugi, Jun Suda, Masakazu Kanechika, Yoshitaka Nakano, Takahiro Kozawa, Norikatsu Koide, Keita Kataoka, Masahiro Horita and Kazuyoshi Tomita and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Tetsu Kachi

182 papers receiving 4.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Tetsu Kachi Japan 34 4.0k 3.3k 1.9k 1.2k 803 188 4.6k
Jun Suda Japan 42 2.6k 0.7× 5.7k 1.7× 1.7k 0.9× 1.4k 1.2× 1.4k 1.8× 401 6.9k
Seiji Mita United States 34 3.2k 0.8× 1.5k 0.5× 1.9k 1.0× 1.4k 1.1× 654 0.8× 144 3.7k
Andrei Vescan Germany 30 2.0k 0.5× 2.2k 0.7× 1.0k 0.5× 1.6k 1.3× 606 0.8× 211 3.4k
B. Sverdlov United States 24 2.3k 0.6× 2.4k 0.7× 1.1k 0.6× 1.4k 1.2× 1.5k 1.9× 86 4.1k
P. Kozodoy United States 30 3.6k 0.9× 2.0k 0.6× 1.8k 1.0× 1.4k 1.1× 1.3k 1.6× 60 4.2k
P. Vennéguès France 38 3.3k 0.8× 1.5k 0.4× 1.9k 1.0× 2.1k 1.7× 1.0k 1.3× 172 4.4k
N. A. El-Masry United States 32 2.1k 0.5× 1.7k 0.5× 1.5k 0.8× 2.4k 2.0× 1.5k 1.9× 151 4.2k
B.P. Keller United States 31 5.1k 1.3× 2.7k 0.8× 2.3k 1.2× 2.0k 1.7× 1.5k 1.9× 69 5.6k
Theeradetch Detchprohm United States 36 4.1k 1.0× 1.8k 0.5× 2.0k 1.0× 1.9k 1.6× 1.6k 2.1× 185 4.7k
M. D. Bremser United States 30 3.6k 0.9× 1.6k 0.5× 1.6k 0.9× 1.8k 1.4× 919 1.1× 76 4.0k

Countries citing papers authored by Tetsu Kachi

Since Specialization
Citations

This map shows the geographic impact of Tetsu Kachi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tetsu Kachi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tetsu Kachi more than expected).

Fields of papers citing papers by Tetsu Kachi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tetsu Kachi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tetsu Kachi. The network helps show where Tetsu Kachi may publish in the future.

Co-authorship network of co-authors of Tetsu Kachi

This figure shows the co-authorship network connecting the top 25 collaborators of Tetsu Kachi. A scholar is included among the top collaborators of Tetsu Kachi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Tetsu Kachi. Tetsu Kachi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Shima, Kohei, Tetsuo Narita, Akira Uedono, et al.. (2025). Impacts of ultra-high-pressure annealing on undoped and ion-implanted GaN studied by photoluminescence measurements. Journal of Applied Physics. 137(23).
2.
Kataoka, Keita, Tetsuo Narita, Kazuyoshi Tomita, Shinji Yamada, & Tetsu Kachi. (2024). Depth Analyses of Mg‐Acceptor and Si‐Donor Concentrations in GaN by Combining Stepwise Etching and Photoluminescence. physica status solidi (b). 261(11). 5 indexed citations
3.
Narita, Tetsuo, Hiroko Iguchi, Daigo Kikuta, et al.. (2024). Engineered interface charges and traps in GaN MOSFETs providing high channel mobility and E-mode operation. Japanese Journal of Applied Physics. 63(12). 120801–120801. 3 indexed citations
4.
Uzuhashi, Jun, Jun Chen, Wei Yi, et al.. (2022). Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131(18). 13 indexed citations
5.
Akazawa, Masamichi, et al.. (2022). Detection of defect levels in vicinity of Al2O3/p-type GaN interface using sub-bandgap-light-assisted capacitance–voltage method. Journal of Applied Physics. 132(19). 15 indexed citations
6.
7.
Akazawa, Masamichi, et al.. (2021). X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN. Japanese Journal of Applied Physics. 60(3). 36503–36503. 6 indexed citations
8.
Narita, Tetsuo, Kazuyoshi Tomita, Tetsu Kachi, et al.. (2021). Photoionization cross section ratio of nitrogen-site carbon in GaN under sub-bandgap-light irradiation determined by isothermal capacitance transient spectroscopy. Applied Physics Express. 14(9). 91004–91004. 4 indexed citations
9.
Ishida, Takashi, Hideki Sakurai, Keita Kataoka, et al.. (2021). Design and demonstration of nearly-ideal edge termination for GaN p–n junction using Mg-implanted field limiting rings. Applied Physics Express. 14(7). 74002–74002. 28 indexed citations
10.
11.
Narita, Tetsuo, Kazuyoshi Tomita, Keita Kataoka, et al.. (2020). Progress on and challenges of p-type formation for GaN power devices. Journal of Applied Physics. 128(9). 83 indexed citations
12.
Iwata, Kenji, Hideki Sakurai, Shigeo Arai, et al.. (2020). Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis. Journal of Applied Physics. 127(10). 39 indexed citations
13.
Horita, Masahiro, Tetsuo Narita, Tetsu Kachi, & Jun Suda. (2020). Identification of origin of E C –0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy. Applied Physics Express. 13(7). 71007–71007. 36 indexed citations
14.
Narita, Tetsuo, Kazuyoshi Tomita, Tetsu Kachi, et al.. (2020). Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN. Japanese Journal of Applied Physics. 59(SG). SGGD05–SGGD05. 5 indexed citations
15.
Maeda, Takuya, Tetsuo Narita, Hiroyuki Ueda, et al.. (2019). Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination. IEEE Electron Device Letters. 40(6). 941–944. 96 indexed citations
16.
Kikuta, Daigo, et al.. (2019). Highly reliable AlSiO gate oxides formed through post-deposition annealing for GaN-based MOS devices. Applied Physics Express. 13(2). 26504–26504. 38 indexed citations
17.
Sakurai, Hideki, Shinji Yamada, Hideo Suzuki, et al.. (2019). Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing. Applied Physics Letters. 115(14). 133 indexed citations
18.
Narita, Tetsuo, Kazuyoshi Tomita, Shinji Yamada, & Tetsu Kachi. (2018). Quantitative investigation of the lateral diffusion of hydrogen in p-type GaN layers having NPN structures. Applied Physics Express. 12(1). 11006–11006. 25 indexed citations
19.
Narita, Tetsuo, Nobuyuki Ikarashi, Kazuyoshi Tomita, Keita Kataoka, & Tetsu Kachi. (2018). Wide range doping control and defect characterization of GaN layers with various Mg concentrations. Journal of Applied Physics. 124(16). 52 indexed citations
20.
Kachi, Tetsu, et al.. (2013). Evaluation of GaN Substrate for Vertical GaN Power Device Applications. Sensors and Materials. 219–219. 10 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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