K.P. Lee

779 total citations
17 papers, 652 citations indexed

About

K.P. Lee is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, K.P. Lee has authored 17 papers receiving a total of 652 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Condensed Matter Physics, 16 papers in Electrical and Electronic Engineering and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in K.P. Lee's work include GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (5 papers). K.P. Lee is often cited by papers focused on GaN-based semiconductor devices and materials (16 papers), Semiconductor materials and devices (10 papers) and Silicon Carbide Semiconductor Technologies (5 papers). K.P. Lee collaborates with scholars based in United States, South Korea and Taiwan. K.P. Lee's co-authors include S. J. Pearton, F. Ren, A.P. Zhang, C. R. Abernathy, F. Ren, Tzer‐En Nee, Chang‐Cheng Chuo, J. W. Johnson, Kwang Hyeon Baik and Jaeho Shin and has published in prestigious journals such as Applied Surface Science, Materials Science and Engineering R Reports and Solid-State Electronics.

In The Last Decade

K.P. Lee

17 papers receiving 628 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K.P. Lee United States 8 505 462 209 198 198 17 652
Jin‐Kuo Ho Taiwan 6 475 0.9× 286 0.6× 251 1.2× 130 0.7× 212 1.1× 9 562
A.P. Zhang United States 8 693 1.4× 549 1.2× 272 1.3× 253 1.3× 197 1.0× 12 791
D. S. Rawal India 15 424 0.8× 474 1.0× 164 0.8× 169 0.9× 153 0.8× 83 619
Chunhui Yan United States 9 474 0.9× 231 0.5× 176 0.8× 281 1.4× 291 1.5× 20 611
Nobuhiko Sawaki Nobuhiko Sawaki Japan 13 537 1.1× 285 0.6× 279 1.3× 194 1.0× 307 1.6× 22 671
Li Chang Taiwan 12 349 0.7× 256 0.6× 180 0.9× 125 0.6× 208 1.1× 33 502
U. Karrer Germany 9 402 0.8× 356 0.8× 186 0.9× 173 0.9× 213 1.1× 13 587
Muneyoshi Suita Japan 16 702 1.4× 557 1.2× 390 1.9× 210 1.1× 245 1.2× 38 840
K. Hazu Japan 15 550 1.1× 258 0.6× 376 1.8× 167 0.8× 318 1.6× 48 724
Masakazu Kanechika Japan 16 781 1.5× 766 1.7× 352 1.7× 149 0.8× 175 0.9× 39 948

Countries citing papers authored by K.P. Lee

Since Specialization
Citations

This map shows the geographic impact of K.P. Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K.P. Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K.P. Lee more than expected).

Fields of papers citing papers by K.P. Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K.P. Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K.P. Lee. The network helps show where K.P. Lee may publish in the future.

Co-authorship network of co-authors of K.P. Lee

This figure shows the co-authorship network connecting the top 25 collaborators of K.P. Lee. A scholar is included among the top collaborators of K.P. Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K.P. Lee. K.P. Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Cho, Hyun, K.P. Lee, F. Ren, et al.. (2003). Temperature dependence of MgO/GaN MOSFET performance. Solid-State Electronics. 47(9). 1601–1604. 7 indexed citations
2.
Lee, K.P., A. M. Dabiran, A. Osinsky, et al.. (2003). RF performance of GaN-based npn bipolar transistors. Solid-State Electronics. 47(9). 1501–1506. 1 indexed citations
3.
Lee, K.P., A. M. Dabiran, P. P. Chow, S. J. Pearton, & F. Ren. (2003). Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs. Solid-State Electronics. 47(6). 969–974. 4 indexed citations
4.
Cho, Hyun, K.P. Lee, F. Ren, et al.. (2003). Influence of gate oxide thickness on Sc2O3/GaN MOSFETs. Solid-State Electronics. 47(10). 1757–1761. 6 indexed citations
5.
Lee, K.P., F. Ren, S. J. Pearton, A. M. Dabiran, & P. P. Chow. (2003). Simulations of InGaN-base heterojunction bipolar transistors. Solid-State Electronics. 47(6). 1009–1014. 2 indexed citations
6.
Lee, K.P., A. M. Dabiran, P. P. Chow, et al.. (2003). Temperature dependence of pnp GaN/InGaN HBT performance. Solid-State Electronics. 48(1). 37–41. 6 indexed citations
7.
Cho, Hyun, K.P. Lee, F. Ren, et al.. (2003). Gate breakdown characteristics of MgO/GaN MOSFETs. Solid-State Electronics. 47(9). 1597–1600. 8 indexed citations
8.
Pearton, S. J., F. Ren, A.P. Zhang, et al.. (2001). GaN electronics for high power, high temperature applications. Materials Science and Engineering B. 82(1-3). 227–231. 92 indexed citations
9.
Lee, K.P., Kwang Hyeon Baik, F. Ren, et al.. (2001). Wet and dry etching of Sc2O3. Applied Surface Science. 185(1-2). 52–59. 5 indexed citations
10.
Johnson, J. W., F. Ren, F. Ren, et al.. (2001). Schottky rectifiers fabricated on free-standing GaN substrates. Solid-State Electronics. 45(3). 405–410. 34 indexed citations
11.
Luo, B., F. Ren, K.P. Lee, et al.. (2001). Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs. Solid-State Electronics. 45(9). 1625–1638. 1 indexed citations
12.
Mehandru, R., F. Ren, J. Kim, et al.. (2001). Electrical Characterization of GaN Metal Oxide Semiconductor Diode using Sc2O3 as the Gate Oxide. MRS Proceedings. 693. 2 indexed citations
13.
Luo, B., F. Ren, K.P. Lee, et al.. (2001). Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors. Solid-State Electronics. 45(9). 1613–1624. 3 indexed citations
14.
Baik, Kwang Hyeon, K.P. Lee, Jaeho Shin, et al.. (2001). Dry etch chemistries for TiO2 thin films. Applied Surface Science. 185(1-2). 27–33. 59 indexed citations
15.
Baik, Kwang Hyeon, B. Luo, K.P. Lee, et al.. (2001). Effect of PECVD of SiO2 passivation layers on GaN and InGaP. Solid-State Electronics. 45(12). 2093–2096. 7 indexed citations
16.
Lee, K.P., A.P. Zhang, G. Dang, et al.. (2001). Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs. Solid-State Electronics. 45(2). 243–247. 11 indexed citations
17.
Pearton, S. J., F. Ren, A.P. Zhang, & K.P. Lee. (2000). Fabrication and performance of GaN electronic devices. Materials Science and Engineering R Reports. 30(3-6). 55–212. 404 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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