Hai Lu

523 total citations
16 papers, 444 citations indexed

About

Hai Lu is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Hai Lu has authored 16 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Condensed Matter Physics, 10 papers in Electronic, Optical and Magnetic Materials and 9 papers in Electrical and Electronic Engineering. Recurrent topics in Hai Lu's work include GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (7 papers). Hai Lu is often cited by papers focused on GaN-based semiconductor devices and materials (13 papers), Ga2O3 and related materials (10 papers) and Semiconductor materials and devices (7 papers). Hai Lu collaborates with scholars based in United States, China and United Kingdom. Hai Lu's co-authors include C. F. McConville, W. J. Schaff, T. D. Veal, Imran Mahboob, Louis F. J. Piper, F. Bechstedt, J. Furthmüller, R. Goldhahn, F. Fuchs and K. Lischka and has published in prestigious journals such as Applied Physics Letters, Physical Review B and Journal of Physics D Applied Physics.

In The Last Decade

Hai Lu

15 papers receiving 441 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Hai Lu United States	8	359	252	193	164	122	16	444
D. Shiell United States	6	328 0.9×	237 0.9×	171 0.9×	134 0.8×	74 0.6×	8	435
Dolar Khachariya United States	12	362 1.0×	209 0.8×	108 0.6×	184 1.1×	86 0.7×	35	399
Hongling Xiao China	10	324 0.9×	182 0.7×	123 0.6×	187 1.1×	63 0.5×	45	378
Greeshma Chandan India	12	227 0.6×	210 0.8×	218 1.1×	197 1.2×	142 1.2×	18	442
M. Hayden Breckenridge United States	16	506 1.4×	352 1.4×	165 0.9×	291 1.8×	81 0.7×	25	568
S. Fritze Germany	8	372 1.0×	227 0.9×	222 1.2×	220 1.3×	127 1.0×	10	476
M. Hamilton United States	6	418 1.2×	331 1.3×	140 0.7×	155 0.9×	102 0.8×	8	488
K. Minder United States	8	319 0.9×	289 1.1×	234 1.2×	123 0.8×	96 0.8×	12	443
P. C. Chang Taiwan	13	293 0.8×	230 0.9×	151 0.8×	156 1.0×	105 0.9×	34	391
Jinyu Ni China	11	395 1.1×	230 0.9×	131 0.7×	310 1.9×	57 0.5×	32	458

Countries citing papers authored by Hai Lu

Since Specialization

Citations

This map shows the geographic impact of Hai Lu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hai Lu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hai Lu more than expected).

Fields of papers citing papers by Hai Lu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hai Lu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hai Lu. The network helps show where Hai Lu may publish in the future.

Co-authorship network of co-authors of Hai Lu

This figure shows the co-authorship network connecting the top 25 collaborators of Hai Lu. A scholar is included among the top collaborators of Hai Lu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hai Lu. Hai Lu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

16 of 16 papers shown

Lu, Hai, et al.. (2025). Kramers-Protected Hardware-Efficient Error Correction with Andreev Spin Qubits.. PubMed. 135(21). 210602–210602.

Guo, Hui, Rui Wang, Danfeng Pan, et al.. (2022). Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines. 13(9). 1396–1396. 1 indexed citations

Guo, Hui, Pengfei Shao, Haineng Bai, et al.. (2022). Low-temperature characteristics and gate leakage mechanisms of LPCVD-SiNx/AlGaN/GaN MIS-HEMTs. Journal of Physics D Applied Physics. 55(42). 424002–424002. 3 indexed citations

Cai, Xiaolong, Hai Lu, Yunfeng Chen, et al.. (2017). Single Photon Counting Spatial Uniformity of 4H-SiC APD Characterized by SNOM-Based Mapping System. IEEE Photonics Technology Letters. 29(19). 1603–1606. 10 indexed citations

Chen, Leilei, Guohao Yu, Dawei Yan, et al.. (2017). Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes. IEEE Photonics Technology Letters. 29(17). 1447–1450. 15 indexed citations

Zhou, Dong, Fei Liu, Hai Lu, et al.. (2016). High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation. IEEE Photonics Technology Letters. 28(22). 2526–2528. 16 indexed citations

Jiang, Rong, Dawei Yan, Hai Lu, et al.. (2014). Reverse leakage current in AlGaN-based ultraviolet light-emitting diodes. Chinese Science Bulletin. 59(12). 1276–1279. 6 indexed citations

Chen, Dunjun, Yanli Liu, Bin Liu, et al.. (2012). Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing. IEEE Photonics Technology Letters. 24(17). 1478–1480. 3 indexed citations

Tsen, K. T., Juliann G. Kiang, D. K. Ferry, et al.. (2007). Subpicosecond time-resolved Raman studies of electron–longitudinal optical phonon interactions in InN. Applied Physics Letters. 90(17). 4 indexed citations

10.

Cimalla, V., Ch. Y. Wang, Muhammad Ali, et al.. (2007). Reduced surface electron accumulation at InN films by ozone induced oxidation. Applied Physics Letters. 90(15). 36 indexed citations

11.

King, P. D. C., T. D. Veal, C. F. McConville, et al.. (2007). Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters. 91(9). 92 indexed citations

12.

Valcheva, E., S. Alexandrova, Stoichko Dimitrov, Hai Lu, & W. J. Schaff. (2006). Recombination processes with and without momentum conservation in degenerate InN. physica status solidi (a). 203(1). 75–79. 2 indexed citations

13.

Klochikhin, A. A., V. Yu. Davydov, V. V. Emtsev, et al.. (2005). Manifestation of the equilibrium hole distribution in photoluminescence of n‐InN. physica status solidi (b). 242(4). 6 indexed citations

14.

Piper, Louis F. J., T. D. Veal, Imran Mahboob, et al.. (2004). Temperature invariance ofInNelectron accumulation. Physical Review B. 70(11). 35 indexed citations

15.

Veal, T. D., Imran Mahboob, Louis F. J. Piper, et al.. (2004). Indium nitride: Evidence of electron accumulation. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(4). 2175–2178. 35 indexed citations

16.

Mahboob, Imran, T. D. Veal, Louis F. J. Piper, et al.. (2004). Origin of electron accumulation at wurtzite InN surfaces. Physical Review B. 69(20). 180 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact