M. Ishiko

474 total citations
31 papers, 384 citations indexed

About

M. Ishiko is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, M. Ishiko has authored 31 papers receiving a total of 384 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 5 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in M. Ishiko's work include Silicon Carbide Semiconductor Technologies (16 papers), Electrostatic Discharge in Electronics (13 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Ishiko is often cited by papers focused on Silicon Carbide Semiconductor Technologies (16 papers), Electrostatic Discharge in Electronics (13 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Ishiko collaborates with scholars based in Japan, Switzerland and Taiwan. M. Ishiko's co-authors include Tetsu Kachi, Takashi Ohuchi, T. Shoji, T. Ohnishi, Yoshitaka Nakano, Kimimori Hamada, F. Ren, Yoshihiro Irokawa, J.-I. Chyi and S. J. Pearton and has published in prestigious journals such as Applied Physics Letters, Japanese Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

M. Ishiko

30 papers receiving 370 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
M. Ishiko Japan	11	352	115	86	39	31	31	384
Dong Yun Jung South Korea	10	288 0.8×	56 0.5×	52 0.6×	59 1.5×	26 0.8×	53	346
Hirotaka Otake Japan	9	488 1.4×	272 2.4×	127 1.5×	43 1.1×	27 0.9×	16	534
Greg Dunne United States	12	793 2.3×	75 0.7×	133 1.5×	69 1.8×	87 2.8×	33	840
E. Wolfgang Germany	11	224 0.6×	28 0.2×	73 0.8×	44 1.1×	65 2.1×	30	314
Karsten Guth Germany	11	230 0.7×	112 1.0×	63 0.7×	32 0.8×	41 1.3×	29	343
Tatsuhiko Fujihira Japan	11	1.0k 2.9×	142 1.2×	72 0.8×	44 1.1×	84 2.7×	32	1.1k
F. Bauwens Belgium	14	714 2.0×	268 2.3×	55 0.6×	16 0.4×	45 1.5×	48	734
Chengzhan Li China	12	399 1.1×	35 0.3×	72 0.8×	38 1.0×	60 1.9×	71	490
Tyler Flack United States	3	221 0.6×	248 2.2×	122 1.4×	108 2.8×	49 1.6×	7	342
V. Khemka United States	15	676 1.9×	88 0.8×	47 0.5×	40 1.0×	141 4.5×	54	691

Countries citing papers authored by M. Ishiko

Since Specialization

Citations

This map shows the geographic impact of M. Ishiko's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Ishiko with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Ishiko more than expected).

Fields of papers citing papers by M. Ishiko

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Ishiko. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Ishiko. The network helps show where M. Ishiko may publish in the future.

Co-authorship network of co-authors of M. Ishiko

This figure shows the co-authorship network connecting the top 25 collaborators of M. Ishiko. A scholar is included among the top collaborators of M. Ishiko based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Ishiko. M. Ishiko is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shoji, T., et al.. (2011). Reliability Design for Neutron Induced Single-Event Burnout of IGBT. IEEJ Transactions on Industry Applications. 131(8). 992–999. 11 indexed citations

Shoji, T., et al.. (2011). Reliability Design for Neutron Induced Single-Event Burnout of IGBT. IEEJ Transactions on Sensors and Micromachines. 131(8). 992–999. 5 indexed citations

Shoji, T., et al.. (2010). Cosmic ray ruggedness of IGBTs for hybrid vehicles. 129–132. 23 indexed citations

Shoji, T., Jun Saito, & M. Ishiko. (2010). Theoretical Analysis on Temperature Dependency of Short-Circuit Capability. IEEJ Transactions on Electronics Information and Systems. 130(6). 939–943. 5 indexed citations

Kim, Eun Hee, Narumasa Soejima, Yukihiko Watanabe, M. Ishiko, & Tetsu Kachi. (2010). Electrical Properties of Metal–Insulator–Semiconductor Capacitors on Freestanding GaN Substrate. Japanese Journal of Applied Physics. 49(4S). 04DF08–04DF08. 25 indexed citations

Tanaka, Hiroki, et al.. (2008). Mechanical Stress Dependence of Power Device Electrical Characteristics. IEEJ Transactions on Industry Applications. 128(5). 577–583. 3 indexed citations

Ishiko, M.. (2008). Development of power devices for hybrid vehicles. 194–199. 1 indexed citations

Ishiko, M., et al.. (2007). A Simple Approach for Dynamic Junction Temperature Estimation of IGBTs on PWM Operating Conditions. 916–920. 25 indexed citations

Tanaka, Hirohisa, et al.. (2006). Mechanical stress dependence of power device electrical characteristics. 1–4. 12 indexed citations

10.

Ishiko, M., et al.. (2005). Design concept for wire-bonding reliability improvement by optimizing position in power devices. Microelectronics Journal. 37(3). 262–268. 51 indexed citations

11.

Ishiko, M., et al.. (2005). A normally-off bipolar mode static induction transistor (BSIT) with high current gains. 6. 92–97. 2 indexed citations

12.

Irokawa, Yoshihiro, Yoshitaka Nakano, M. Ishiko, et al.. (2004). MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors. Applied Physics Letters. 84(15). 2919–2921. 105 indexed citations

13.

Ishiko, M., et al.. (2004). A PT-IGBT with a p-/n+ buffer layer. 48. 341–344. 5 indexed citations

14.

Tokuda, Yutaka, et al.. (2004). Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation. The European Physical Journal Applied Physics. 27(1-3). 111–114. 5 indexed citations

15.

Ishiko, M., et al.. (2003). Effect of Al content on the microstructure in GaN grown on Si by MOVPE. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2181–2184. 1 indexed citations

16.

Tokuda, Yutaka, et al.. (2003). Production of Metastable Defects in n-Type Silicon by Hydrogen Implantation at 88 K. Japanese Journal of Applied Physics. 42(Part 1, No. 11). 6833–6834. 6 indexed citations

17.

Nakano, Yoshitaka, M. Ishiko, & Hiroshi Tadano. (2002). Deep level centers in silicon introduced by high-energy He irradiation and subsequent annealing. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 20(1). 379–381. 4 indexed citations

18.

Tadano, Hiroto, et al.. (1997). Low loss static induction devices (transistors and thyristors). Microelectronics Reliability. 37(9). 1389–1396. 1 indexed citations

19.

Asonen, H., et al.. (1987). Measurement Of Band Discontinuities For The Double Heterojunction ZnSe:MnSe:ZnSe. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 796. 104–104. 1 indexed citations

20.

Asonen, H., et al.. (1987). Measurement of the ZnSe:MnSe:ZnSe heterojunction valence-band discontinuities. Applied Physics Letters. 50(12). 733–735. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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