A. V. Govorkov

672 total citations
39 papers, 566 citations indexed

About

A. V. Govorkov is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, A. V. Govorkov has authored 39 papers receiving a total of 566 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Condensed Matter Physics, 24 papers in Electronic, Optical and Magnetic Materials and 21 papers in Electrical and Electronic Engineering. Recurrent topics in A. V. Govorkov's work include GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (24 papers) and Semiconductor materials and devices (14 papers). A. V. Govorkov is often cited by papers focused on GaN-based semiconductor devices and materials (29 papers), Ga2O3 and related materials (24 papers) and Semiconductor materials and devices (14 papers). A. V. Govorkov collaborates with scholars based in Russia, United States and South Korea. A. V. Govorkov's co-authors include N. B. Smirnov, A. Y. Polyakov, S. J. Pearton, A. Osinsky, Alexander V. Markov, Е. А. Кожухова, P. P. Chow, J. M. Zavada, K. Ip and Young-Woo Heo and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

A. V. Govorkov

39 papers receiving 544 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. V. Govorkov Russia 16 405 289 268 253 159 39 566
C. H. Qiu United States 8 380 0.9× 212 0.7× 235 0.9× 245 1.0× 125 0.8× 12 483
Ho Ki Kwon South Korea 15 407 1.0× 314 1.1× 202 0.8× 189 0.7× 205 1.3× 33 579
R. Aleksiejūnas Lithuania 16 419 1.0× 432 1.5× 316 1.2× 194 0.8× 349 2.2× 72 758
A. S. Zubrilov Russia 15 495 1.2× 349 1.2× 243 0.9× 229 0.9× 240 1.5× 58 654
Daniel Le Si Dang France 9 215 0.5× 150 0.5× 325 1.2× 179 0.7× 94 0.6× 16 437
J. Limb United States 15 515 1.3× 298 1.0× 134 0.5× 249 1.0× 175 1.1× 23 561
Y.P. Hsu Taiwan 17 577 1.4× 307 1.1× 379 1.4× 215 0.8× 207 1.3× 24 700
B. Schineller Germany 14 497 1.2× 307 1.1× 252 0.9× 233 0.9× 279 1.8× 72 640
Guanghan Fan China 15 394 1.0× 207 0.7× 338 1.3× 300 1.2× 199 1.3× 93 649
J. I. Hwang Japan 12 514 1.3× 188 0.7× 398 1.5× 327 1.3× 221 1.4× 23 686

Countries citing papers authored by A. V. Govorkov

Since Specialization
Citations

This map shows the geographic impact of A. V. Govorkov's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Govorkov with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Govorkov more than expected).

Fields of papers citing papers by A. V. Govorkov

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Govorkov. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Govorkov. The network helps show where A. V. Govorkov may publish in the future.

Co-authorship network of co-authors of A. V. Govorkov

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Govorkov. A scholar is included among the top collaborators of A. V. Govorkov based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Govorkov. A. V. Govorkov is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Polyakov, A. Y., N. B. Smirnov, Е. А. Кожухова, et al.. (2014). Electrical Characteristics and Deep Traps Spectra of Undoped GaN Films Grown on Si Using Different Strain-Relieving Buffer Types. IEEE Transactions on Nanotechnology. 13(1). 151–159. 2 indexed citations
3.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2009). Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire. Materials Science and Engineering B. 166(3). 220–224. 21 indexed citations
4.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2009). Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films. Journal of Applied Physics. 105(6). 13 indexed citations
5.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2008). Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures. Applied Physics Letters. 92(4). 17 indexed citations
6.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors. Applied Physics Letters. 91(23). 48 indexed citations
7.
Markov, Alexander V., A. Y. Polyakov, N. B. Smirnov, et al.. (2007). Synthesis solute diffusion growth of bulk GaAs: Effects of growth temperature and stoichiometry. Solid-State Electronics. 51(7). 1039–1046. 2 indexed citations
8.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2007). Electron Irradiation Effects in GaN∕InGaN Multiple Quantum Well Structures. Journal of The Electrochemical Society. 155(1). H31–H31. 15 indexed citations
9.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2006). Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics. 100(9). 34 indexed citations
10.
Botchkarev, A., James A. Griffin, N. B. Smirnov, et al.. (2006). Optical properties of GaAs1−xNxalloys grown by molecular beam epitaxy. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 86(23). 3477–3486. 3 indexed citations
11.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2004). Effects of hydrogen plasma treatment on electrical properties of p-AlGaN. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 22(2). 771–775. 2 indexed citations
12.
Polyakov, A. Y., et al.. (2004). Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures. Journal of Applied Physics. 95(10). 5591–5596. 21 indexed citations
13.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, & S. J. Pearton. (2003). Electrical and optical properties of Fe-doped semi-insulating GaN templates. Applied Physics Letters. 83(16). 3314–3316. 47 indexed citations
14.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2002). Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions. Solid-State Electronics. 46(12). 2141–2146. 6 indexed citations
15.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2002). Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering. Journal of Electronic Materials. 31(5). 384–390. 6 indexed citations
16.
Markov, Alexander V., A. Y. Polyakov, N. B. Smirnov, et al.. (2000). Study of GaAs as a material for solar neutrino detectors. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 439(2-3). 651–661. 16 indexed citations
17.
Shmidt, N. M., W. V. Lundin, A. V. Sakharov, et al.. (2000). Ultraviolet photodetectors based on GaN and Al x Ga 1-x N epitaxial layers. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4340. 92–92. 3 indexed citations
18.
Polyakov, A. Y., N. B. Smirnov, A. V. Govorkov, et al.. (2000). Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors. Solid-State Electronics. 44(9). 1549–1555. 1 indexed citations
19.
Balagurov, L. A., et al.. (1996). Device structures on porous silicon studied by scanning electron microscopy in the electron-beam current mode. Journal of Applied Physics. 80(1). 574–578. 6 indexed citations
20.
Govorkov, A. V., et al.. (1993). Investigation of the formation of transition layers during LPE growth of GaAs. Scanning. 15(6). 333–337. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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