Claude Ahyi

446 total citations
14 papers, 394 citations indexed

About

Claude Ahyi is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Claude Ahyi has authored 14 papers receiving a total of 394 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 10 papers in Electrical and Electronic Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Claude Ahyi's work include GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (6 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Claude Ahyi is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Semiconductor materials and devices (6 papers) and Silicon Carbide Semiconductor Technologies (5 papers). Claude Ahyi collaborates with scholars based in United States and France. Claude Ahyi's co-authors include John R. Williams, Minseo Park, A. Hanser, Yi Zhou, Chin‐Che Tin, Dake Wang, Edward A. Preble, Nicole Williams, K. R. Evans and An-Jen Cheng and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Solid-State Electronics.

In The Last Decade

Claude Ahyi

13 papers receiving 378 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Claude Ahyi United States 10 272 253 139 130 97 14 394
Elías Muñoz Spain 10 188 0.7× 218 0.9× 211 1.5× 55 0.4× 187 1.9× 21 402
Hyeongnam Kim United States 10 280 1.0× 270 1.1× 124 0.9× 127 1.0× 135 1.4× 17 401
Yogesh Sharma United Kingdom 14 624 2.3× 107 0.4× 163 1.2× 157 1.2× 81 0.8× 50 689
Chi-Chih Liao Taiwan 10 233 0.9× 232 0.9× 106 0.8× 143 1.1× 158 1.6× 28 437
H.H. Yao Taiwan 9 197 0.7× 226 0.9× 100 0.7× 185 1.4× 125 1.3× 16 375
B. Cui United States 12 232 0.9× 370 1.5× 258 1.9× 60 0.5× 205 2.1× 23 446
Pawan Mishra Saudi Arabia 12 259 1.0× 123 0.5× 118 0.8× 110 0.8× 344 3.5× 30 510
Greeshma Chandan India 12 197 0.7× 227 0.9× 210 1.5× 142 1.1× 218 2.2× 18 442
Yujie Ai China 13 155 0.6× 253 1.0× 141 1.0× 58 0.4× 166 1.7× 48 409
C. F. Lo United States 14 472 1.7× 366 1.4× 185 1.3× 92 0.7× 219 2.3× 30 608

Countries citing papers authored by Claude Ahyi

Since Specialization
Citations

This map shows the geographic impact of Claude Ahyi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Claude Ahyi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Claude Ahyi more than expected).

Fields of papers citing papers by Claude Ahyi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Claude Ahyi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Claude Ahyi. The network helps show where Claude Ahyi may publish in the future.

Co-authorship network of co-authors of Claude Ahyi

This figure shows the co-authorship network connecting the top 25 collaborators of Claude Ahyi. A scholar is included among the top collaborators of Claude Ahyi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Claude Ahyi. Claude Ahyi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Taillon, Joshua A., Claude Ahyi, John Rozen, et al.. (2013). Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics. 113(4). 31 indexed citations
2.
Sharma, Yogesh, Moonil Kim, Claude Ahyi, et al.. (2012). Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection. Applied Physics Letters. 100(23). 42 indexed citations
3.
Wang, Yaqi, Yogesh Sharma, Claude Ahyi, et al.. (2011). DNA hybridization sensor based on AlGaN/GaN HEMT. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2483–2485. 5 indexed citations
4.
Wang, Yaqi, Hui Xu, Yogesh Sharma, et al.. (2011). Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 8(7-8). 2430–2432. 12 indexed citations
5.
Wang, Yaqi, Yogesh Sharma, Jing Dai, et al.. (2010). AlGaN/GaN HEMT Based Biosensor. ECS Transactions. 28(4). 61–64. 2 indexed citations
6.
Xu, Hui, Yaqi Wang, An-Jen Cheng, et al.. (2010). In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation. Journal of Electronic Materials. 39(10). 2237–2242. 16 indexed citations
7.
Wang, Yaqi, Yogesh Sharma, P. Gartland, et al.. (2010). Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate. Semiconductor Science and Technology. 26(2). 22002–22002. 41 indexed citations
8.
Jun, Bongim, Neil D. Merrett, S.D. Phillips, et al.. (2007). A comparison of 63 MeV proton and 10 keV X-ray radiation effects in 4H-SiC depletion-mode vertical trench JFETs. 50. 1–2. 1 indexed citations
9.
Zhou, Yi, Claude Ahyi, Chin‐Che Tin, et al.. (2007). Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors. Applied Physics Letters. 90(12). 20 indexed citations
10.
Zhou, Yi, Dake Wang, Claude Ahyi, et al.. (2007). Temperature-dependent electrical characteristics of bulk GaN Schottky rectifier. Journal of Applied Physics. 101(2). 87 indexed citations
11.
Zhou, Yi, Claude Ahyi, Tamara Isaacs‐Smith, et al.. (2007). Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate. Solid-State Electronics. 52(5). 756–764. 67 indexed citations
12.
Zhou, Yi, Mingyu Li, Dake Wang, et al.. (2006). Electrical characteristics of bulk GaN-based Schottky rectifiers with ultrafast reverse recovery. Applied Physics Letters. 88(11). 34 indexed citations
13.
Zhou, Yi, Dake Wang, Claude Ahyi, et al.. (2006). High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate. Solid-State Electronics. 50(11-12). 1744–1747. 35 indexed citations
14.
Merlen, Alain, et al.. (2001). <title>Michrocam concept of CCD Cranz Schardin high-speed camera</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4183. 145–152. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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