Nitin Goyal

410 total citations
14 papers, 314 citations indexed

About

Nitin Goyal is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Nitin Goyal has authored 14 papers receiving a total of 314 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Condensed Matter Physics, 8 papers in Electronic, Optical and Magnetic Materials and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Nitin Goyal's work include GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Nitin Goyal is often cited by papers focused on GaN-based semiconductor devices and materials (11 papers), Ga2O3 and related materials (8 papers) and Semiconductor Quantum Structures and Devices (5 papers). Nitin Goyal collaborates with scholars based in Norway, Austria and India. Nitin Goyal's co-authors include Tor A. Fjeldly, Sourabh Khandelwal, Benjamı́n Iñı́guez, A. Kenda, Raghvendra Sahai Saxena, Jochen Bardong and Alfred Binder and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Nitin Goyal

14 papers receiving 301 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nitin Goyal Norway 8 260 194 121 85 81 14 314
Yumin Zhang China 10 200 0.8× 171 0.9× 110 0.9× 169 2.0× 68 0.8× 49 320
Joachim Wuerfl Germany 10 370 1.4× 379 2.0× 158 1.3× 72 0.8× 80 1.0× 23 466
Shichuang Sun China 8 328 1.3× 248 1.3× 220 1.8× 108 1.3× 47 0.6× 18 365
Ronghui Hao China 10 416 1.6× 287 1.5× 257 2.1× 118 1.4× 60 0.7× 19 436
S.S. Park South Korea 10 236 0.9× 217 1.1× 101 0.8× 63 0.7× 120 1.5× 22 295
Chia-Hsun Wu Taiwan 13 314 1.2× 271 1.4× 162 1.3× 91 1.1× 53 0.7× 22 374
Sreenidhi Turuvekere India 7 384 1.5× 347 1.8× 165 1.4× 79 0.9× 92 1.1× 15 429
Yueh-Chin Lin Taiwan 12 231 0.9× 324 1.7× 118 1.0× 90 1.1× 102 1.3× 52 402
Manyam Pilla United States 9 337 1.3× 291 1.5× 166 1.4× 58 0.7× 95 1.2× 10 384
Fabio Alessio Marino Italy 10 319 1.2× 317 1.6× 111 0.9× 53 0.6× 103 1.3× 22 394

Countries citing papers authored by Nitin Goyal

Since Specialization
Citations

This map shows the geographic impact of Nitin Goyal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nitin Goyal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nitin Goyal more than expected).

Fields of papers citing papers by Nitin Goyal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nitin Goyal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nitin Goyal. The network helps show where Nitin Goyal may publish in the future.

Co-authorship network of co-authors of Nitin Goyal

This figure shows the co-authorship network connecting the top 25 collaborators of Nitin Goyal. A scholar is included among the top collaborators of Nitin Goyal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nitin Goyal. Nitin Goyal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Goyal, Nitin, et al.. (2015). Raman spectroscopy of graphene on AlGaN/GaN heterostructures. Thin Solid Films. 597. 140–143. 16 indexed citations
2.
Goyal, Nitin & Tor A. Fjeldly. (2015). Determination of Surface Donor States Properties and Modeling of InAlN/AlN/GaN Heterostructures. IEEE Transactions on Electron Devices. 63(2). 881–885. 12 indexed citations
3.
Goyal, Nitin, et al.. (2015). Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air. Solid-State Electronics. 116. 107–110. 4 indexed citations
4.
Goyal, Nitin & Tor A. Fjeldly. (2014). Analytical modeling of AlGaN/AlN/GaN heterostructures including effects of distributed surface donor states. Applied Physics Letters. 105(2). 16 indexed citations
5.
Goyal, Nitin & Tor A. Fjeldly. (2014). Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures. Applied Physics Letters. 105(3). 10 indexed citations
6.
Goyal, Nitin, Benjamı́n Iñı́guez, & Tor A. Fjeldly. (2013). Surface barrier height for different Al compositions and barrier layer thicknesses in AlGaN/GaN heterostructure field effect transistors. AIP conference proceedings. 393–394. 7 indexed citations
7.
Goyal, Nitin & Tor A. Fjeldly. (2013). Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures. Journal of Applied Physics. 113(1). 23 indexed citations
8.
Goyal, Nitin & Tor A. Fjeldly. (2013). Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures. MRS Proceedings. 1538. 335–340. 3 indexed citations
9.
Khandelwal, Sourabh, Nitin Goyal, & Tor A. Fjeldly. (2012). A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation. Solid-State Electronics. 79. 22–25. 5 indexed citations
10.
Goyal, Nitin, et al.. (2012). Effect of gate dielectric thickness on gate leakage in tunnel field effect transistor. 1–4. 7 indexed citations
11.
Goyal, Nitin & Raghvendra Sahai Saxena. (2012). A New LDMOSFET with Tunneling Junction for Improved On-State Performance. IEEE Electron Device Letters. 34(1). 90–92. 8 indexed citations
12.
Goyal, Nitin, Benjamı́n Iñı́guez, & Tor A. Fjeldly. (2012). Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures. Applied Physics Letters. 101(10). 33 indexed citations
13.
14.
Khandelwal, Sourabh, Nitin Goyal, & Tor A. Fjeldly. (2011). A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices. IEEE Transactions on Electron Devices. 58(10). 3622–3625. 166 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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